Toshiba Releases 3rd Generation 650V SiC Schottky Barrier Diodes that Contribute to More Efficient Industrial Equipment
July 13, 2023
Toshiba Electronic Devices & Storage Corporation
KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the "TRSxxx65H series,” the company’s third and latest[1] generation of silicon carbide (SiC) Schottky barrier diodes (SBDs) for industrial equipment. Volume shipments of the first 12 products, all 650V, start today, with seven products housed in TO-220-2L packages and five in DFN8×8 packages.
The new products use a new metal in a third generation SiC SBD chip that optimizes the junction barrier Schottky (JBS) structure[2] of the second generation products. They achieve industry-leading[3] low forward voltage of 1.2V (Typ.), 17% lower than the 1.45V (Typ.) of the previous generation. They also improve the trade-offs between forward voltage and total capacitive charge, and between forward voltage and reverse current, which reduces power dissipation and contributes to high efficiency of equipment.
Notes:
[1] As of July 2023.
[2] JBS structure lowers the electric field at the Schottky interface and reduces leakage current.
[3] As of July 2023, Toshiba survey.
Applications
- Switching power supplies
- EV charging stations
- Photovoltaic inverters
Features
- Industry-leading[3] low forward voltage: VF＝1.2V (Typ.) (IF=IF(DC))
- Low reverse current:
TRS6E65H IR＝1.1μA (Typ.) (VR=650V) - Low total capacitive charge:
TRS6E65H QC＝17nC (Typ.) (VR=400V, f=1MHz)
Main Specifications
(Unless otherwise specified, Ta=25°C)
| Part number | Package | Absolute maximum ratings | Electrical characteristics | Sample Check & Availability | |||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage VRRM (V) |
Forward DC current IF(DC) (A) |
Non-repetitive peak forward surge current IFSM (A) |
Forward voltage (pulse measurement) VF (V) |
Reverse current (pulse measurement) IR (μA) |
Total capacitance Ct (pF) | Total capacitive charge QC (nC) | |||||
| Temperature conditions Tc (°C) | f=50Hz (half-sine wave, t=10ms), Tc=25°C | Square wave, t=10μs, Tc=25°C | IF=IF(DC) | VR=650V | VR=400V, f=1MHz | ||||||
| Typ. | Typ. | Typ. | Typ. | ||||||||
| TRS2E65H | TO-220-2L | 650 | 2 | 164 | 19 | 120 | 1.2 | 0.2 | 10 | 6.5 |  |
| TRS3E65H | 3 | 161 | 28 | 170 | 0.4 | 14 | 9 | |
|||
| TRS4E65H | 4 | 158 | 36 | 230 | 0.6 | 17 | 12 | |
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| TRS6E65H | 6 | 153 | 41 | 310 | 1.1 | 24 | 17 | |
|||
| TRS8E65H | 8 | 149 | 56 | 410 | 1.5 | 31 | 22 | |
|||
| TRS10E65H | 10 | 148 | 62 | 510 | 2.0 | 38 | 27 | |
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| TRS12E65H | 12 | 148 | 74 | 640 | 2.4 | 46 | 33 | |
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| TRS4V65H | DFN8×8 | 4 | 155 | 28 | 230 | 0.6 | 17 | 12 | |
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| TRS6V65H | 6 | 151 | 41 | 310 | 1.1 | 24 | 17 | |
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| TRS8V65H | 8 | 148 | 45 | 410 | 1.5 | 31 | 22 | |
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| TRS10V65H | 10 | 145 | 54 | 510 | 2.0 | 38 | 27 | |
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| TRS12V65H | 12 | 142 | 60 | 640 | 2.4 | 46 | 33 | |
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Follow the link below for more on Toshiba’s SiC Schottky Barrier Diodes.
To check availability of the new products at online distributors, visit:
TRS2E65H
TRS3E65H
TRS4E65H
TRS6E65H
TRS8E65H
TRS10E65H
TRS12E65H
TRS4V65H
TRS6V65H
TRS8V65H
TRS10V65H
TRS12V65H
Customer Inquiries:
Power Device Sales & Marketing Dept.
Tel: +81-44-548-2216
Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.