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SiC Schottky Barrier Diodes

SiC Schottky barrier diodes (SBDs) feature high reverse voltage ratings. In addition to SBDs with short reverse recovery time (t_rr), Toshiba provides 650-V SBDs with a junction barrier Schottky (JBS) structure that provide low leakage current (I_r) and high surge current capability required for switched-mode power supplies. These devices help improve the efficiency of switched-mode power supplies.

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V_RRM (Max) (V)

650
1200

I_F(DC) (Max) (A)

Number of Circuits

Package name (Toshiba)

V_F (Max) (V)

1.35
1.45
1.6

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You can narrow down your search for applicable products by package type or number of pins.

unit:: mm; inch

DFN 8×8

Package Size

W	:	8.0 mm 0.31 inch
L	:	8.0 mm 0.31 inch
H	:	0.85 mm 0.033 inch

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TO-220F-2L

Package Size

W	:	10.0 mm 0.39 inch
L	:	15.0 mm 0.59 inch
H	:	4.5 mm 0.18 inch

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TO-220-2L

Package Size

W	:	10.05 mm 0.40 inch
L	:	15.3 mm 0.60 inch
H	:	4.45 mm 0.18 inch

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TO-247

Package Size

W	:	15.94 mm 0.63 inch
L	:	20.95 mm 0.82 inch
H	:	5.02 mm 0.20 inch

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All package dimensions are guaranteed in millimeters as mentioned on datasheet. Package dimension in inches is round to 2 significant digits converted with 1mm=0.0393701inch.

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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

Technical Articles

3rd generation SiC Schottky barrier diode (SBD)

It adopts the new schottky metal, and it is equipped with 3rd generation SiC SBD chip, which optimized junction barrier schottky (JBS) structure of 2nd generation. As a result, we have achieved industry-leading lowest forward voltage 1.2 V (Typ.), which is 17 % lower than that of the 2nd generation 1.45 V (Typ.). The 3rd generation products have improved the trade-offs between forward voltage and total capacitive charge, and the trade-offs between forward voltage and reverse current compared with the 2nd generation products. This reduces power dissipation and contributes to high efficiency of equipment.

Details

3rd generation SiC Schottky barrier diode (SBD)

SiC SBD that achieves low switching losses

By using SiC, a device with high withstand voltage and low switching loss (low reverse recovery charge) has been realized.