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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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SiC Schottky Barrier Diodes

SiC Schottky barrier diodes (SBDs) feature high reverse voltage ratings. In addition to SBDs with short reverse recovery time (trr), Toshiba provides 650-V SBDs with a junction barrier Schottky (JBS) structure that provide low leakage current (Ir) and high surge current capability required for switched-mode power supplies. These devices help improve the efficiency of switched-mode power supplies.

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All package dimensions are guaranteed in millimeters as mentioned on datasheet. Package dimension in inches is round to 2 significant digits converted with 1mm=0.0393701inch.

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

SiC Schottky barrier diodes (SBDs) with low switching loss
By using SiC, a device with high withstand voltage and low switching loss (low reverse recovery charge) has been realized.
Si material and SiC material

Documents

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Applications

Microwave Oven
Uninterruptible power supply
Server
Thermostat

Reference Design

1.2V/100A Output DC-DC Converter Compliant with 48V Bus Voltage
This reference design provides specification, block diagram and PCB layout data of 1.2V/100A output isolated DC-DC converter which convert 48V bus voltage to 1.2V directly.

DC-DC / MOSFET / reference design

Single Phase PFC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing single phase PFC power supply.

Single Phase PFC Power Supply Basic Simulation Circuit

Interleaved PFC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing interleaved PFC power supply.

Interleaved PFC Power Supply Basic Simulation Circuit

Bridgeless PFC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing bridgeless PFC power supply.

Bridgeless PFC Power Supply Basic Simulation Circuit

300W Isolated DC-DC Converter
This reference design provides specification, block diagram and PCB layout data of 300W isolated DC-DC converter which is small size and suitable for consumer applications.

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