A lineup expansion of small MOSFETs for automotive equipment offering low power consumption with low On-resistance: SSM6J808R, SSM6K819R

Product News 2020-01

The package photograph of a lineup expansion of small MOSFETs for automotive equipment offering low power consumption with low On-resistance: SSM6J808R, SSM6K819R.

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has made a product lineup expansion by two types which are suitable for lighting control switches such as automotive head lamps, the -40 V P-channel MOSFET “SSM6J808R” and the 100 V N-channel MOSFET “SSM6K819R”.
By adopting the latest process[1], the new product features the industry leading[2] low On-resistance, contributing to lower power consumption of the equipment. By using the small TSOP6F package, the footprint has been reduced by approximately 70 % compared to the SOP-8 package with equivalent allowable power dissipation. This contributes to a smaller footprint. Furthermore, they are AEC-Q101 qualified and can be used in various applications including in-vehicle such as a power line protection and a lighting control switch of on-board head lamp.

Notes :
[1] As of October 2019
[2] Comparison with the product of the TSOP6F class package and the same maximum rating, according to a survey by Toshiba (as of October 2019).

Features

  • Reducing power consumption with industry leading[2] low On-resistance
      RDS(ON)=48 mΩ (max) @VGS=-4.5 V (SSM6J808R)
      RDS(ON)=36.4 mΩ (max) @VGS=4.5 V (SSM6K819R)
  • Reducing footprint with TSOP6F package (footprint is reduced by about 70 % from SOP-8)
  • AEC-Q101 qualified

Applications

Automotive equipment (head lamps, turn lamps, daytime running lights, etc.)

Product Specifications

(@Ta=25 °C)

Part
number
Polarity Package Absolute maximum ratings Drain-source
On-resistance
RDS(ON)
max
@|VGS|
=4.5 V
(mΩ)
Input
capacitance
Ciss
typ.
(pF)
Total
gate
charge
Qg
typ.
(nC)
Generation
Name Size
typ.
(mm)
Drain-
source
voltage
VDSS
(V)
Gate-
source
voltage
VGSS
(V)
Drain
current
(DC)
ID
(A)
Power
dissipation
PD
(W)
SSM6J808R P-channel TSOP6F 2.9x2.8 -40 -20/+10 -7 1.5 48 1020 24.2 U-MOSVI
SSM6K819R N-channel 100 ±20 10 1.5 36.4 1110 8.5 U-MOSVIII-H

Pin Assignments

The illustration of pin assignments of a lineup expansion of small MOSFETs for automotive equipment offering low power consumption with low On-resistance: SSM6J808R, SSM6K819R.

Application Circuit Example

The illustration of application circuit example of a lineup expansion of small MOSFETs for automotive equipment offering low power consumption with low On-resistance: SSM6J808R, SSM6K819R.

The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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