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About information presented in this cross reference
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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Find everything you need for your next product design. Simply select an application and click through to the block diagram to discover our semiconductor solutions.
IGBTs/IEGTs
An Insulated Gate Bipolar Transistor, IGBT, and an Injection Enhanced Gate Transistor, IEGT, are devices that switch power on and off between a collector and emitter by controlling the voltage between the gate and emitter in the same way as MOSFET.
Toshiba IGBT and IEGT can be used in a wide range of applications, from home appliances to infrastructure equipment.
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IGBTs
Toshiba discrete IGBTs contribute energy savings in applications, such as IH cooking equipment, rice cookers, kitchen microwaves, refrigerators, washing machines, air-conditioners.
IEGT (PPI)
IEGT具有出色的關斷性能和寬廣的安全工作區域，從而可以降低功耗，縮小尺寸並提高設備效率。
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