An Insulated Gate Bipolar Transistor, IGBT, and an Injection Enhanced Gate Transistor, IEGT, are devices that switch power on and off between a collector and emitter by controlling the voltage between the gate and emitter in the same way as MOSFET.
Toshiba IGBT and IEGT can be used in a wide range of applications, from home appliances to infrastructure equipment.
A discrete IGBT that helps reduce the power consumption and radiated emissions of home appliances : GT30J110SRA
Toshiba’s IGBT and FWD Compact Modeling Realizes Highly Accurate Prediction of Power Efficiency and EMI Noise for Multiple External Condition
Toshiba’s IGBT/IEGT Compact Modeling Realizes Highly Accurate Prediction of Power Efficiency and EMI Noise