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Fast Recovery Diode Housed in a Press-Pack Package That Helps to Reduce the Size and Power Consumption of Power Converters

Product News 2022-06

The package photograph of Fast Recovery Diode Housed in a Press-Pack Package That Helps to Reduce the Size and Power Consumption of Power Converters.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched a fast recovery diode “3000GXHH32” housed in a press-pack package in which a newly developed high-speed diode chips are mounted. The product is for power converters used in DC power transmission systems, industrial motor drive systems and the like. Its absolute maximum ratings are 4500 V (repetitive peak reverse voltage) and 3000 A (forward current, DC.)

The new product 3000GXHH32 features low conduction loss and a wide reverse recovery safe operating area (RRSOA). It has a cathode structure that can suppress voltage oscillation during reverse recovery and a high-voltage structure that allows high-temperature operation. This has extended the forward current (DC) from 1500 A to 3000 A, the peak power in the RRSOA by about 45 %, and the junction temperature rating from 125 °C to 150 °C (max) compared with the existing product[1] with the same package size. In addition, in the case of configuring a system with switching devices, this product allows faster turn on by suppressing the voltage oscillation during reverse recovery. Therefore, 3000GXHH32 allows users to configure a system with lower power consumption by combining with Toshiba’s IEGT[2] ST3000GXH31A.

3000GXHH32 helps to reduce the size and power consumption of power converters such as those for DC power transmission systems, static VAR compensators, and industrial motor drive systems.

Notes:
[1] 1500GXHH28
[2] IEGT: Injection Enhanced Gate Transistor

Applications

  • DC power transmission
  • Static VAR compensator
  • Industrial motor drive

Features

  • Forward current (DC) 3000 A
  • Wide reverse recovery safe operating area
  • Suppresses voltage oscillation during reverse recovery

Main Specifications

Part number

3000GXHH32

Package

SR85D

Absolute
maximum
ratings

Repetitive peak reverse voltage  VRRM  (V)

@Tc=25 °C

4500

Forward current (DC)  IF  (A)

@Tf=42 °C

3000

Non-repetitive peak forward surge current  IFSM  (kA)

@10 ms half-sine wave,

VR=0 V,

Tj=150 °C

21

Junction temperature  Tj  (°C)

-40 to 150

Electrical

characteristics

Forward voltage  VF  typ.  (V)

@IF=3000 A, Tj=150 °C

3.00

Reverse recovery loss  Err  typ.  (J)

@VR=2800 V, IF=3000 A,

LS≈300 nH, Tj=150 °C

Drive side: ST3000GXH31A

di/dt≈5000 A/μs, Tj=150 °C

5.60

Internal Circuit

The illustration of internal circuit of Fast Recovery Diode Housed in a Press-Pack Package That Helps to Reduce the Size and Power Consumption of Power Converters.

Application Circuit Examples

The illustration of application circuit examples of Fast Recovery Diode Housed in a Press-Pack Package That Helps to Reduce the Size and Power Consumption of Power Converters.
The illustration of application circuit examples of Fast Recovery Diode Housed in a Press-Pack Package That Helps to Reduce the Size and Power Consumption of Power Converters.

Note:
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.