Product News 2022-06
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched a fast recovery diode “3000GXHH32” housed in a press-pack package in which a newly developed high-speed diode chips are mounted. The product is for power converters used in DC power transmission systems, industrial motor drive systems and the like. Its absolute maximum ratings are 4500 V (repetitive peak reverse voltage) and 3000 A (forward current, DC.)
The new product 3000GXHH32 features low conduction loss and a wide reverse recovery safe operating area (RRSOA). It has a cathode structure that can suppress voltage oscillation during reverse recovery and a high-voltage structure that allows high-temperature operation. This has extended the forward current (DC) from 1500 A to 3000 A, the peak power in the RRSOA by about 45 %, and the junction temperature rating from 125 °C to 150 °C (max) compared with the existing product[1] with the same package size. In addition, in the case of configuring a system with switching devices, this product allows faster turn on by suppressing the voltage oscillation during reverse recovery. Therefore, 3000GXHH32 allows users to configure a system with lower power consumption by combining with Toshiba’s IEGT[2] ST3000GXH31A.
3000GXHH32 helps to reduce the size and power consumption of power converters such as those for DC power transmission systems, static VAR compensators, and industrial motor drive systems.
Notes:
[1] 1500GXHH28
[2] IEGT: Injection Enhanced Gate Transistor
Part number |
|||
---|---|---|---|
Package |
SR85D |
||
Absolute |
Repetitive peak reverse voltage VRRM (V) |
@Tc=25 °C |
4500 |
Forward current (DC) IF (A) |
@Tf=42 °C |
3000 |
|
Non-repetitive peak forward surge current IFSM (kA) |
@10 ms half-sine wave, VR=0 V, Tj=150 °C |
21 |
|
Junction temperature Tj (°C) |
-40 to 150 |
||
Electrical characteristics |
Forward voltage VF typ. (V) |
@IF=3000 A, Tj=150 °C |
3.00 |
Reverse recovery loss Err typ. (J) |
@VR=2800 V, IF=3000 A, LS≈300 nH, Tj=150 °C Drive side: ST3000GXH31A di/dt≈5000 A/μs, Tj=150 °C |
5.60 |
Note:
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.