4500 V/1000 A New Press Pack IEGT That Contributes to Size Reduction and High Output for High-Voltage Converters
Product News 2024-04
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched a newly developed press pack IEGT[1] "ST1000GXH35" with ratings of 4500 V/1000 A for use in high-voltage converters such as DC power transmission systems and industrial motor controllers.
The new product ST1000GXH35 employs trench-type IEGT chips and high-speed diode chips.
The IEGT chips reduce collector-emitter saturation-voltage and improve shutdown tolerance, short-circuit tolerance, and high-temperature tolerance. Therefore, collector-emitter saturation-voltage (VCE(sat) ) [2] has been reduced by approximately 28 % from 3.00 V to 2.15 V (typical) compared with the existing product ST750GXH24.
The high-speed diode chips suppress voltage oscillation during reverse recovery and improve reverse recovery tolerance and high-temperature tolerance. The new product can be used at a higher turn-on speed than the existing product, therefore the turn-on switching loss (Eon) [3][4] has been reduced by approximately 34 % from 4.15 J to 2.75 J (typical).
Furthermore, the test voltage for shutdown tests and short-circuit tests has been enhanced to 3400 V[5] in response to applications requiring high voltage. In addition, the junction temperature rating has been increased from 125 °C to 150 °C (maximum) by improving the high-temperature tolerance of the diode.
ST1000GXH35 contributes to size reduction and high output for high-voltage converters such as DC power transmissions, static VAR compensators, and industrial motor controllers.
Notes:
[1] IEGT: Injection Enhanced Gate Transistor
[2] VCE(sat) conditions: VGE=15 V, IC=750 A, Tj=125 °C
[3] Eon condition of existing product ST750GXH24: VCC=2800 V, IC=750 A, RG(on)=10 Ω, LS≈300 nH, Tj=125 °C
[4] Eon condition of new product ST1000GXH35: VCC=2800 V, IC=750 A, RG(on)=5.6 Ω, LS≈300 nH, Tj=125 °C
[5] The shutdown test voltage of existing product ST750GXH24 is 2700 V, and the short-circuit test voltage is 3000 V.
Applications
- DC power transmissions
- Static VAR compensators
- Industrial motor controllers
Features
- Low collector-emitter saturation voltage and low turn-on switching loss
- Enhanced to test-voltage 3400 V for shutdown and short-circuit tests
- Maximum junction temperature rating: Tj(max)=150 °C
Main Specifications
(Tc = 25 °C, unless otherwise specified)
| Part number | ST1000GXH35 | |||
|---|---|---|---|---|
| Package | 2-120B1S | |||
| Absolute maximum ratings |
Collector-emitter voltage VCES (V) | 4500 | ||
| Gate-emitter voltage VGES (V) | ±20 | |||
| Collector current (DC) IC (A) | Tf=108 °C | 1000 | ||
| Diode forward current (DC) IF (A) | Tf=15 °C | 1000 | ||
| Junction temperature Tj (°C) | -40 to 150 | |||
| Electrical characteristics |
Collector-emitter saturation voltage VCE(sat) (V) |
VGE =15 V, IC =1000 A, Tj＝150 °C |
Typ. | 2.50 |
| Forward voltage VF (V) | IF=1000 A, Tj=150 °C | Typ. | 3.10 | |
| Turn-on switching loss Eon (J) |
VCC=2800 V, IC=1000 A, RG(on)=5.6 Ω, Ls≈300 nH, Tj=150 °C |
Typ. | 3.75 | |
| Turn-off switching loss Eoff (J) |
VCC=2800 V, IC=1000 A, RG(off)=91 Ω, Ls≈300 nH, Tj=150 °C |
Typ. | 5.25 | |
| Reverse recovery loss Err (J) |
VCC=2800 V, IF=1000 A, RG(on)=5.6 Ω, Ls≈300 nH, Tj=150 °C |
Typ. | 1.70 | |
| Short-circuit pulse width tPSC (μs) |
VCC=3400 V, VGE=±15 V, RG(on)=5.6 Ω, RG(off)=91 Ω, Ls≈150 nH, Tj=125 °C |
Max | 10 | |
Internal Circuit
Application Circuit Examples
Note:
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.
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