4500 V/1000 A New Press Pack IEGT That Contributes to Size Reduction and High Output for High-Voltage Converters

Product News 2024-04

The package photograph of 4500 V/1000 a new press pack IEGT that contributes to size reduction and high output for high-voltage converters.

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched a newly developed press pack IEGT[1] "ST1000GXH35" with ratings of 4500 V/1000 A for use in high-voltage converters such as DC power transmission systems and industrial motor controllers.

The new product ST1000GXH35 employs trench-type IEGT chips and high-speed diode chips.
The IEGT chips reduce collector-emitter saturation-voltage and improve shutdown tolerance, short-circuit tolerance, and high-temperature tolerance. Therefore, collector-emitter saturation-voltage (VCE(sat) ) [2] has been reduced by approximately 28 % from 3.00 V to 2.15 V (typical) compared with the existing product ST750GXH24.
The high-speed diode chips suppress voltage oscillation during reverse recovery and improve reverse recovery tolerance and high-temperature tolerance. The new product can be used at a higher turn-on speed than the existing product, therefore the turn-on switching loss (Eon) [3][4] has been reduced by approximately 34 % from 4.15 J to 2.75 J (typical).
Furthermore, the test voltage for shutdown tests and short-circuit tests has been enhanced to 3400 V[5] in response to applications requiring high voltage. In addition, the junction temperature rating has been increased from 125 °C to 150 °C (maximum) by improving the high-temperature tolerance of the diode.

ST1000GXH35 contributes to size reduction and high output for high-voltage converters such as DC power transmissions, static VAR compensators, and industrial motor controllers.

Notes:
[1] IEGT: Injection Enhanced Gate Transistor
[2] VCE(sat) conditions: VGE=15 V, IC=750 A, Tj=125 °C
[3] Eon condition of existing product ST750GXH24: VCC=2800 V, IC=750 A, RG(on)=10 Ω, LS≈300 nH, Tj=125 °C
[4] Eon condition of new product ST1000GXH35: VCC=2800 V, IC=750 A, RG(on)=5.6 Ω, LS≈300 nH, Tj=125 °C
[5] The shutdown test voltage of existing product ST750GXH24 is 2700 V, and the short-circuit test voltage is 3000 V.

Applications

  • DC power transmissions
  • Static VAR compensators
  • Industrial motor controllers

Features

  • Low collector-emitter saturation voltage and low turn-on switching loss
  • Enhanced to test-voltage 3400 V for shutdown and short-circuit tests
  • Maximum junction temperature rating: Tj(max)=150 °C

Main Specifications

(Tc = 25 °C, unless otherwise specified)

Part number ST1000GXH35
Package 2-120B1S
Absolute
maximum
ratings
Collector-emitter voltage  VCES  (V) 4500
Gate-emitter voltage  VGES  (V) ±20
Collector current (DC)  I(A) Tf=108 °C 1000
Diode forward current (DC)  I(A) Tf=15 °C 1000
Junction temperature Tj  (°C) -40 to 150
Electrical
characteristics
Collector-emitter saturation voltage
VCE(sat)  (V)
VGE =15 V, IC =1000 A,
Tj=150 °C
Typ. 2.50
Forward voltage  VF  (V) IF=1000 A, Tj=150 °C Typ. 3.10
Turn-on switching loss
Eon  (J)
VCC=2800 V, IC=1000 A,
RG(on)=5.6 Ω, Ls≈300 nH,
Tj=150 °C
Typ. 3.75
Turn-off switching loss
Eoff  (J)
VCC=2800 V, IC=1000 A,
RG(off)=91 Ω, Ls≈300 nH,
Tj=150 °C
Typ. 5.25
Reverse recovery loss
Err  (J)
VCC=2800 V, IF=1000 A,
RG(on)=5.6 Ω, Ls≈300 nH,
Tj=150 °C
Typ. 1.70
Short-circuit pulse width
tPSC (μs)
VCC=3400 V, VGE=±15 V,
RG(on)=5.6 Ω, RG(off)=91 Ω,
Ls≈150 nH, Tj=125 °C
Max 10

Internal Circuit

The illustration of 4500 V/1000 a new press pack IEGT that contributes to size reduction and high output for high-voltage converters.

Application Circuit Examples

The illustration of 4500 V/1000 a new press pack IEGT that contributes to size reduction and high output for high-voltage converters.
The illustration of 4500 V/1000 a new press pack IEGT that contributes to size reduction and high output for high-voltage converters.

Note:
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

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