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Lineup expansion of small, low On-resistance common-drain MOSFET products helping battery-driven devices operate for longer periods of time : SSM10N954L

Product News 2021-04

The package photograph of lineup expansion of small, low On-resistance common-drain MOSFET products helping battery-driven devices operate for longer periods of time : SSM10N954L.

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “SSM10N954L,” a common-drain 12 V N-channel MOSFET for battery protection circuits used for Lithium-ion (Li-ion) battery packs of mobile devices and other equipment to expand the lineup.

Li-ion battery packs use highly robust protection circuits to enhance safety. And it is also demanded to reduce heat generation during charging/discharging Li-ion battery. Such protection circuits require low power loss and high-density mounting, therefore, small and thin MOSFETs with low On-resistance are needed.

Similar to the previously released SSM6N951L, the new product uses its micro process and has further reduced its On-resistance. This allows the product to offer low power loss because of its industry-leading[1] low On-resistance characteristics. And by also featuring low standby power consumption because of its low leakage current from the gate (low gate-source leakage current), it helps batteries to operate for longer time. In addition, it uses the new package TCSPAC-153001 (1.49 mm x 2.98 mm, t : 0.11 mm (typ.)).

Notes :
[1] Comparison with the product of the same maximum rating, according to a survey by Toshiba as of March 2021.

Features

  • Industry-leading[1] low On-resistance : RSS(ON)=2.2 mΩ (typ.) @VGS=3.8 V
  • Industry-leading[1] low gate-source leakage current : IGSS=±1 µA (max) @VGS=±8 V
  • Small size surface mounting TCSPAC-153001 package : 1.49 mm × 2.98 mm, t : 0.11 mm (typ.)
  • Common-drain structure that can be easily used in battery protection circuits

Applications

Devices with a Li-ion battery pack

  • Office and personal devices (Smartphones, tablets, power banks and wearable devices, etc.)
  • Consumer electronics devices (Game consoles, electric toothbrushes, compact digital cameras and digital single-lens reflex cameras, etc.)

Product Specifications

(@Ta=25 °C)

Part number SSM10N954L SSM6N951L[2]
Configuration N-channel common-drain
Absolute
maximum
ratings
Source-source voltage VSSS (V) 12
Gate-source voltage VGSS (V) ±8
Source current (DC) IS (A) 13.5 8
Gate-source leakage current
IGSS max @VGS=±8 V (µA)
±1
Source-source
On-resistance
RSS(ON) typ.
(mΩ)
@VGS=4.5 V 2.1 4.4
@VGS=3.8 V 2.2 4.6
@VGS=3.1 V 2.4 4.9
@VGS=2.5 V 3.1 5.5
Package Name TCSPAC-153001 TCSP6A-172101
Size typ. (mm) 1.49 × 2.98, t : 0.11 2.14 × 1.67, t : 0.11

Notes :
[2] Previously released product

Equivalent Circuit

The illustration of equivalent circuit of lineup expansion of small, low On-resistance common-drain MOSFET products helping battery-driven devices operate for longer periods of time : SSM10N954L.

Application Circuit Example

The illustration of application circuit example of lineup expansion of small, low On-resistance common-drain MOSFET products helping battery-driven devices operate for longer periods of time : SSM10N954L.

The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.