A 40 V Product Is Added to the Lineup of Small MOSFETs for Automotive Equipment That Help Reduce Power Consumption with Their Low On-Resistance

Product News 2022-03

The package photograph of A 40 V Product Is Added to the Lineup of Small MOSFETs for Automotive Equipment That Help Reduce Power Consumption with Their Low on-Resistance : SSM6K804R.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched a 40 V N-channel MOSFET, “SSM6K804R,” for automotive equipment to expand the lineup.

By using a new process, the new product SSM6K804R features one of the best in the industry[1] low On-resistance of maximum 18 mΩ under condition of gate-source voltage of 4.5 V. In addition, its flat-lead package has increased its chip mounting capability, and has reduced the thermal resistance. This has allowed the product to feature a power dissipation rating of 1.5 W[2] with the small TSOP6F package, helping reduce the power consumption of equipment.

The TSOP6F package reduces the mounting area by about 70 % compared with Toshiba’s SOP-8 package products[3] that have equivalent power dissipation ratings, helping reduce the size of equipment. Furthermore, the product conforms to AEC-Q101 and can be used for various applications such as DC-DC converters for automotive.

Notes :

[1] Comparison with the product of the TSOP6F class package and the same maximum rating, according to a survey by Toshiba (as of February 2022)
[2] When mounted on a glass epoxy board (FR4, 25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2)
[3] TP89R103NL etc.

Applications

  • Automotive equipment (reverse polarity protection, load switches, DC-DC converters, etc.)

Features

  • Reducing power consumption with one of the best in the industry[1] low On-resistance :
    RDS(ON)=18 mΩ (max) @VGS=4.5 V
  • By reducing saturated thermal resistance, featuring an allowable power dissipation rating of 1.5 W with the TSOP6F package
  • AEC-Q101 qualified

Main Specifications

(@Ta=25 °C)

Part

number

Polarity

Package

Absolute maximum ratings

Electrical characteristics

Name

Size

typ.

(mm)

Drain-

source

voltage

VDSS

(V)

Gate-

source voltage

VGSS

(V)

Drain

current

(DC)

ID

(A)

Power

dissipation

PD

(W)

Drain-source

On-resistance

RDS(ON)

max

(mΩ)

Input

capacitance

Ciss

typ.

(pF)

Total

gate

charge

Qg

typ.

(nC)

@VGS=

4.5 V

SSM6K804R

N-channel

TSOP6F

2.9 × 2.8 × 0.8

40

±20

12

1.5

18

1110

7.5

SSM6K818R[4]

30

15

12

1130

7.5

SSM6K809R[4]

60

6

51

550

9.3

SSM6K810R[4]

100

3.5

92

430

3.2

SSM6K819R[4]

100

10

36.4

1110

8.5

Notes:
[4] Current products

Internal Circuit

The illustration of pin assignments of A 40 V Product Is Added to the Lineup of Small MOSFETs for Automotive Equipment That Help Reduce Power Consumption with Their Low on-Resistance : SSM6K804R.

Application Circuit Example

The illustration of application circuit example of A 40 V Product Is Added to the Lineup of Small MOSFETs for Automotive Equipment That Help Reduce Power Consumption with Their Low on-Resistance : SSM6K804R.

Note :
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage. 
Providing these application circuit examples does not grant any license for industrial property rights.

* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

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