A 40 V Product Is Added to the Lineup of Small MOSFETs for Automotive Equipment That Help Reduce Power Consumption with Their Low On-Resistance
Product News 2022-03
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched a 40 V N-channel MOSFET, “SSM6K804R,” for automotive equipment to expand the lineup.
By using a new process, the new product SSM6K804R features one of the best in the industry[1] low On-resistance of maximum 18 mΩ under condition of gate-source voltage of 4.5 V. In addition, its flat-lead package has increased its chip mounting capability, and has reduced the thermal resistance. This has allowed the product to feature a power dissipation rating of 1.5 W[2] with the small TSOP6F package, helping reduce the power consumption of equipment.
The TSOP6F package reduces the mounting area by about 70 % compared with Toshiba’s SOP-8 package products[3] that have equivalent power dissipation ratings, helping reduce the size of equipment. Furthermore, the product conforms to AEC-Q101 and can be used for various applications such as DC-DC converters for automotive.
Notes :
[1] Comparison with the product of the TSOP6F class package and the same maximum rating, according to a survey by Toshiba (as of February 2022)
[2] When mounted on a glass epoxy board (FR4, 25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2)
[3] TP89R103NL etc.
Applications
- Automotive equipment (reverse polarity protection, load switches, DC-DC converters, etc.)
Features
- Reducing power consumption with one of the best in the industry[1] low On-resistance :
RDS(ON)=18 mΩ (max) @VGS=4.5 V - By reducing saturated thermal resistance, featuring an allowable power dissipation rating of 1.5 W with the TSOP6F package
- AEC-Q101 qualified
Main Specifications
(@Ta=25 °C)
Part number |
Polarity |
Package |
Absolute maximum ratings |
Electrical characteristics |
||||||
|---|---|---|---|---|---|---|---|---|---|---|
Name |
Size typ. (mm) |
Drain- source voltage VDSS (V) |
Gate- source voltage VGSS (V) |
Drain current (DC) ID (A) |
Power dissipation PD (W) |
Drain-source On-resistance RDS(ON) max (mΩ) |
Input capacitance Ciss typ. (pF) |
Total gate charge Qg typ. (nC) |
||
@VGS= 4.5 V |
||||||||||
N-channel |
TSOP6F |
2.9 × 2.8 × 0.8 |
40 |
±20 |
12 |
1.5 |
18 |
1110 |
7.5 |
|
30 |
15 |
12 |
1130 |
7.5 |
||||||
60 |
6 |
51 |
550 |
9.3 |
||||||
100 |
3.5 |
92 |
430 |
3.2 |
||||||
100 |
10 |
36.4 |
1110 |
8.5 |
||||||
Notes:
[4] Current products
Internal Circuit
Application Circuit Example
Note :
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.