Lineup Expansion of 1200 V SiC MOSFET Module that Contributes to High Efficiency and Downsizing of Industrial Equipment
Product News 2024-06
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started mass production of a 3rd generation silicon carbide (SiC) 1200 V and drain current (DC) rating 400 A of SiC MOSFET module “MG400Q2YMS3” for industrial equipment and has expanded its lineup.
The new product MG400Q2YMS3 offers low conduction loss with low drain-source on-voltage (sense) of 0.9 V (typ.)[1]. It also offers low switching loss with both turn-on switching loss and turn-off switching loss of 13 mJ (typ.)[2]. These help to reduce power loss of equipment and the size of cooling device.
MG400Q2YMS3 has a low stray inductance of 12 nH (typ.) and is capable of high-speed switching. In addition, it suppresses surge voltage in switching operation. Thus, it is available for high frequency isolated DC-DC converter.
Toshiba’s SiC MOSFET module of 2-153A1A package has a lineup of five existing products, MG250YD2YMS3 (2200 V / 250 A), MG400V2YMS3 (1700 V / 400 A), MG250V2YMS3 (1700 V / 250 A), and MG600Q2YMS3 (1200 V / 600 A), including new products. This provides a wider range of product selection.
Toshiba will continue to meet the needs for high efficiency and the downsizing of industrial equipment.
Notes
[1] Test condition: ID=400 A, VGS=+20 V, Tch=25 °C
[2] Test condition: VDD=600 V, ID=400 A, Tch=150 °C
Applications
Industrial equipment
- Auxiliary power supply for railway vehicles
- Renewable energy power generation systems
- Motor control equipment for industrial equipment
- High frequency DC-DC converters, etc.
Features
- Low drain-source on-voltage (sense):
VDS(on)sense=0.9 V (typ.) (ID=400 A, VGS=+20 V, Tch=25 °C) - Low turn-on switching loss:
Eon=13 mJ (typ.) (VDD=600 V, ID=400 A, Tch=150 °C) - Low turn-off switching loss:
Eoff=13 mJ (typ.) (VDD=600 V, ID=400 A, Tch=150 °C) - Low stray inductance:
LsPN=12 nH (typ.)
Main Specifications
(Tc=25 °C unless otherwise specified)
| Part number | MG400Q2YMS3 | |||
|---|---|---|---|---|
| Toshiba’s package name | 2-153A1A | |||
| Absolute maximum ratings |
Drain-source voltage VDSS (V) | 1200 | ||
| Gate-source voltage VGSS (V) | +25 / -10 | |||
| Drain current (DC) ID (A) | 400 | |||
| Drain current (pulsed) IDP (A) | 800 | |||
| Channel temperature Tch (°C) | 150 | |||
| Isolation voltage Visol (Vrms) | 4000 | |||
| Electrical characteristics |
Drain-source on-voltage (sense) VDS(on)sense (V) |
ID=400 A, VGS=+20 V, Tch＝25 °C |
Typ. | 0.9 |
| Source-drain on-voltage (sense) VSD(on)sense (V) |
IS=400 A, VGS=+20 V, Tch＝25 °C |
Typ. | 0.8 | |
| Source-drain off-voltage (sense) VSD(off)sense (V) |
IS=400 A, VGS=-6 V, Tch＝25 °C |
Typ. | 1.6 | |
| Turn-on switching loss Eon (mJ) |
VDD=600 V, ID=400 A, Tch=150 °C |
Typ. | 13 | |
| Turn-off switching loss Eoff (mJ) |
Typ. | 13 | ||
| Stray inductance LsPN (nH) | Typ. | 12 | ||
Internal Circuit
Application Circuit Example
Note:
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.
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