Lineup Expansion of 1200 V SiC MOSFET Module that Contributes to High Efficiency and Downsizing of Industrial Equipment

Product News 2024-06

The package photograph of lineup expansion of 1200 V SiC MOSFET module that contributes to high efficiency and downsizing of industrial equipment.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started mass production of a 3rd generation silicon carbide (SiC) 1200 V and drain current (DC) rating 400 A of SiC MOSFET module “MG400Q2YMS3” for industrial equipment and has expanded its lineup.

The new product MG400Q2YMS3 offers low conduction loss with low drain-source on-voltage (sense) of 0.9 V (typ.)[1]. It also offers low switching loss with both turn-on switching loss and turn-off switching loss of 13 mJ (typ.)[2]. These help to reduce power loss of equipment and the size of cooling device.
MG400Q2YMS3 has a low stray inductance of 12 nH (typ.) and is capable of high-speed switching. In addition, it suppresses surge voltage in switching operation. Thus, it is available for high frequency isolated DC-DC converter.

Toshiba’s SiC MOSFET module of 2-153A1A package has a lineup of five existing products, MG250YD2YMS3 (2200 V / 250 A), MG400V2YMS3 (1700 V / 400 A), MG250V2YMS3 (1700 V / 250 A), and MG600Q2YMS3 (1200 V / 600 A), including new products. This provides a wider range of product selection.

Toshiba will continue to meet the needs for high efficiency and the downsizing of industrial equipment.

Notes
[1] Test condition: ID=400 A, VGS=+20 V, Tch=25 °C
[2] Test condition: VDD=600 V, ID=400 A, Tch=150 °C

Applications

Industrial equipment

  • Auxiliary power supply for railway vehicles
  • Renewable energy power generation systems
  • Motor control equipment for industrial equipment
  • High frequency DC-DC converters, etc.

Features

  • Low drain-source on-voltage (sense):
    VDS(on)sense=0.9 V (typ.) (ID=400 A, VGS=+20 V, Tch=25 °C)
  • Low turn-on switching loss:
    Eon=13 mJ (typ.) (VDD=600 V, ID=400 A, Tch=150 °C)
  • Low turn-off switching loss:
    Eoff=13 mJ (typ.) (VDD=600 V, ID=400 A, Tch=150 °C)
  • Low stray inductance:
    LsPN=12 nH (typ.)

Main Specifications

(Tc=25 °C unless otherwise specified)

Part number MG400Q2YMS3
Toshiba’s package name 2-153A1A
Absolute
maximum
ratings
Drain-source voltage  VDSS  (V) 1200
Gate-source voltage  VGSS  (V) +25 / -10
Drain current (DC)  ID  (A) 400
Drain current (pulsed)  IDP  (A) 800
Channel temperature  Tch  (°C) 150
Isolation voltage  Visol  (Vrms) 4000
Electrical
characteristics
Drain-source on-voltage (sense)
VDS(on)sense  (V)
ID=400 A, VGS=+20 V,
Tch=25 °C
Typ. 0.9
Source-drain on-voltage (sense)
VSD(on)sense  (V)
IS=400 A, VGS=+20 V,
Tch=25 °C
Typ. 0.8
Source-drain off-voltage (sense)
VSD(off)sense  (V)
IS=400 A, VGS=-6 V,
Tch=25 °C
Typ. 1.6
Turn-on switching loss
Eon  (mJ)
VDD=600 V, ID=400 A,
Tch=150 °C
Typ. 13
Turn-off switching loss
Eoff  (mJ)
Typ. 13
Stray inductance  LsPN  (nH) Typ. 12

Internal Circuit

The illustration of internal circuit of lineup expansion of 1200 V SiC MOSFET module that contributes to high efficiency and downsizing of industrial equipment.

Application Circuit Example

The illustration of application circuit example of lineup expansion of 1200 V SiC MOSFET module that contributes to high efficiency and downsizing of industrial equipment.

Note:
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

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