April 11, 2018
Toshiba Electronic Devices & Storage Corporation
— Reduced on-resistance from use of a small low-resistance package
TOKYO—Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has released two new MOSFETs “TPHR7904PB” and “TPH1R104PB” housed in the small low-resistance SOP Advance (WF) package, as new additions to the automotive 40V N-channel power MOSFET series. Mass production starts today.
Fabricated using the latest ninth generation trench U-MOS IX-H process and housed in a small low-resistance package, the new MOSFETs provide low on-resistance and thus help reduce conduction loss. The U-MOS IX-H design also lowers switching noise compared with Toshiba’s previous design (U-MOS IV), helping to reduce EMI (Electromagnetic Interference).
(Unless otherwise specified, @Ta=25℃)
Follow the link below for more on MOSFET line-up.
Power Device Sales & Marketing Department
Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.