Toshiba Releases Automotive 40V N-channel Power MOSFETs in New Package
April 11, 2018
Toshiba Electronic Devices & Storage Corporation
— Reduced on-resistance from use of a small low-resistance package
TOKYO—Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has released two new MOSFETs “TPHR7904PB” and “TPH1R104PB” housed in the small low-resistance SOP Advance (WF) package, as new additions to the automotive 40V N-channel power MOSFET series. Mass production starts today.
Fabricated using the latest ninth generation trench U-MOS IX-H process and housed in a small low-resistance package, the new MOSFETs provide low on-resistance and thus help reduce conduction loss. The U-MOS IX-H design also lowers switching noise compared with Toshiba’s previous design (U-MOS IV), helping to reduce EMI (Electromagnetic Interference).
Applications
- Electric power steering (EPS)
- Load switches
- Electric pumps
Features
- Provides a maximum on-resistance, RDS(ON)max, of 0.79 mΩ from the use of the U-MOS IX-H process and the SOP Advance(WF) package.
- Low-noise characteristics reduce electromagnetic interference (EMI).
- Available in a small low-resistance package with a wettable flank terminal structure.
Main Specifications
(Unless otherwise specified, @Ta=25℃)
| Part Number | Drain-Source voltage VDSS (V) |
Drain current (DC) ID (A) |
Drain-Source on-resistance RDS(ON) max.(mΩ) |
Built-in Zener Diode between Gate-Source | Series | |
|---|---|---|---|---|---|---|
| @VGS＝6V | @VGS＝10V | |||||
| 40 | 120 | 1.96 | 1.14 | No | U-MOS IX | |
| 150 | 1.3 | 0.79 | No | U-MOS IX | ||
Follow the link below for more on MOSFET line-up.
Customer Inquiries:
Power Device Sales & Marketing Department
Tel: +81-3-3457-3933
Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.