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Toshiba Launches Silicon Carbide MOSFET Module that Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

February 25, 2021

Toshiba Electronic Devices & Storage Corporation

Toshiba Launches Silicon Carbide MOSFET Module that Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

TOKYO—Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “MG800FXF2YMS3,” a silicon carbide (SiC) MOSFET module integrating newly developed dual channel SiC MOSFET chips with ratings of 3300V and 800A, for industrial applications. Volume production will start in May 2021.

To achieve a channel temperature of 175°C, the new product adopts an iXPLV (intelligent fleXible Package Low Voltage) package with silver sintering internal bonding technology and high mounting-compatibility The new module meet the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway vehicles, and renewable energy power generation systems.

Applications

  • Inverters and converters for railway vehicles
  • Renewable energy power generation systems
  • Industrial motor control equipment

Features

  • Drain-source voltage rating : VDSS=3300V
  • Drain current rating : ID=800A Dual
  • High channel temperature range : Tch=175°C
  • Low loss :
    Eon=250mJ (typ.)
    Eoff=240mJ (typ.)
    VDS(on)sense=1.6V (typ.)
  • Low stray inductance : Ls=12nH (typ.)
  • High power density small iXPLV package

Main Specifications

(unless otherwise specified, @Tc=25°C)

Part number

MG800FXF2YMS3

Package

iXPLV

Absolute
maximum
ratings

Drain-source voltage  VDSS  (V)

3300

Gate-source voltage  VGSS  (V)

+25/-10

Drain current (DC)  ID  (A)

800

Drain current (pulsed)  IDP  (A)

1600

Channel temperature  Tch  (°C)

175

Isolation voltage  Visol  (Vrms)

6000

Electrical
characteristics

 

Drain-source voltage on-voltage (sense)
VDS(on)sense typ.  (V)

@VGS= +20V,
ID=800A

1.6

Source-drain voltage on-voltage (sense)
VSD(on)sense typ.  (V)

@VGS= +20V,
IS=800A

1.5

Source-drain voltage off-voltage (sense)
VSD(off)sense typ.  (V)

@VGS= -6V,
IS=800A

2.3

Stray inductance module  LSPN typ.  (nH)

12

Turn-on switching loss
Eon typ.  (mJ)

@VDD=1800V,
ID=800A,
Tch=150°C

250

Turn-off switching loss
Eoff typ.  (mJ)

@VDD=1800V,
ID=800A,
Tch=150°C

240

Follow the link below for more on the new product.

MG800FXF2YMS3

Follow the link below for more on Toshiba’s SiC power device lineup.

SiC Power Devices

Customer Inquiries:

Small Signal Device Sales & Marketing Dept.

Tel: +81-3-3457-3411

Contact

*Company names, product names, and service names may be trademarks of their respective companies.
*Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

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