February 25, 2021
Toshiba Electronic Devices & Storage Corporation
TOKYO—Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “MG800FXF2YMS3,” a silicon carbide (SiC) MOSFET module integrating newly developed dual channel SiC MOSFET chips with ratings of 3300V and 800A, for industrial applications. Volume production will start in May 2021.
To achieve a channel temperature of 175°C, the new product adopts an iXPLV (intelligent fleXible Package Low Voltage) package with silver sintering internal bonding technology and high mounting-compatibility The new module meet the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway vehicles, and renewable energy power generation systems.
(unless otherwise specified, @Tc=25°C)
Part number |
|||
---|---|---|---|
Package |
iXPLV |
||
Absolute |
Drain-source voltage VDSS (V) |
3300 |
|
Gate-source voltage VGSS (V) |
+25/-10 |
||
Drain current (DC) ID (A) |
800 |
||
Drain current (pulsed) IDP (A) |
1600 |
||
Channel temperature Tch (°C) |
175 |
||
Isolation voltage Visol (Vrms) |
6000 |
||
Electrical
|
Drain-source voltage on-voltage (sense) |
@VGS= +20V, |
1.6 |
Source-drain voltage on-voltage (sense) |
@VGS= +20V, |
1.5 |
|
Source-drain voltage off-voltage (sense) |
@VGS= -6V, |
2.3 |
|
Stray inductance module LSPN typ. (nH) |
12 |
||
Turn-on switching loss |
@VDD=1800V, |
250 |
|
Turn-off switching loss |
@VDD=1800V, |
240 |
Follow the link below for more on the new product.
Follow the link below for more on Toshiba’s SiC power device lineup.
Customer Inquiries:
Small Signal Device Sales & Marketing Dept.
Tel: +81-3-3457-3411
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*Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.