Toshiba Releases 3rd Generation 650V SiC Schottky Barrier Diodes that Contribute to More Efficient Industrial Equipment

July 13, 2023

Toshiba Electronic Devices & Storage Corporation

Toshiba Releases 3rd Generation 650V SiC Schottky Barrier Diodes that Contribute to More Efficient Industrial Equipment

KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the "TRSxxx65H series,” the company’s third and latest[1] generation of silicon carbide (SiC) Schottky barrier diodes (SBDs) for industrial equipment. Volume shipments of the first 12 products, all 650V, start today, with seven products housed in TO-220-2L packages and five in DFN8×8 packages.

The new products use a new metal in a third generation SiC SBD chip that optimizes the junction barrier Schottky (JBS) structure[2] of the second generation products. They achieve industry-leading[3] low forward voltage of 1.2V (Typ.), 17% lower than the 1.45V (Typ.) of the previous generation. They also improve the trade-offs between forward voltage and total capacitive charge, and between forward voltage and reverse current, which reduces power dissipation and contributes to high efficiency of equipment.

[1] As of July 2023.
[2] JBS structure lowers the electric field at the Schottky interface and reduces leakage current.
[3] As of July 2023, Toshiba survey.


  • Switching power supplies
  • EV charging stations
  • Photovoltaic inverters


  • Industry-leading[3] low forward voltage: VF=1.2V (Typ.) (IF=IF(DC))
  • Low reverse current:
    TRS6E65H  IR=1.1μA (Typ.) (VR=650V)
  • Low total capacitive charge:
    TRS6E65H  QC=17nC (Typ.) (VR=400V, f=1MHz)

Main Specifications

(Unless otherwise specified, Ta=25°C)

Part number Package Absolute maximum ratings Electrical characteristics Sample Check & Availability
Repetitive peak reverse
voltage VRRM (V)
IF(DC) (A)
peak forward
surge current
Forward voltage
(pulse measurement) VF (V)
Reverse current
(pulse measurement) IR (μA)
Total capacitance Ct (pF) Total capacitive charge QC (nC)
  Temperature conditions Tc (°C) f=50Hz (half-sine wave, t=10ms), Tc=25°C Square wave, t=10μs, Tc=25°C IF=IF(DC) VR=650V VR=400V, f=1MHz
Typ. Typ. Typ. Typ.
TRS2E65H TO-220-2L 650 2 164 19 120 1.2 0.2 10 6.5 Buy Online
TRS3E65H 3 161 28 170 0.4 14 9 Buy Online
TRS4E65H 4 158 36 230 0.6 17 12 Buy Online
TRS6E65H 6 153 41 310 1.1 24 17 Buy Online
TRS8E65H 8 149 56 410 1.5 31 22 Buy Online
TRS10E65H 10 148 62 510 2.0 38 27 Buy Online
TRS12E65H 12 148 74 640 2.4 46 33 Buy Online
TRS4V65H DFN8×8 4 155 28 230 0.6 17 12 Buy Online
TRS6V65H 6 151 41 310 1.1 24 17 Buy Online
TRS8V65H 8 148 45 410 1.5 31 22 Buy Online
TRS10V65H 10 145 54 510 2.0 38 27 Buy Online
TRS12V65H 12 142 60 640 2.4 46 33 Buy Online

Follow the link below for more on Toshiba’s SiC Schottky Barrier Diodes.

SiC Schottky Barrier Diodes

To check availability of the new products at online distributors, visit:

Buy Online

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Customer Inquiries:

  Power Device Sales & Marketing Dept.

  Tel: +81-44-548-2216

* Company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

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