Conferences and Awards

・730-790mA/mm² 48V-to-1V Integrated Hybrid DC-DC Converters based on a Star-Delta Switching Network with 5x/8x Duty Expansion
Chen Kong Teh, et al.
2024 IEEE Symposium on VLSI Technology & Circuits, 20 Jun. 2024

・Improved Reliability of a 2200 V SiC MOSFET Module with an Epoxy Encapsulated Insulated Metal Substrate
Hiroshi Kono, et al.
2024 Power Conversion and Intelligent Motion (PCIM) Europe, 12 Jun. 2024

・Paralleling 3.3-kV/800-A rated SiC-MOSFET Modules – An Optimization Method
Hiroyuki Irifune, et al.
2024 Power Conversion and Intelligent Motion (PCIM) Europe, 12 Jun. 2024

・Demonstration of Pseudo Independent Driving of Buried Gate in Trench Field Plate MOSFETs
Tatsuya Nishiwaki, et al.
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 5 Jun. 2024

・Novel Approach to Mitigate Parasitic Oscillation of Power Modules with Parallel Connected SiC-MOSFETs
Shun Takeda, et al.
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 6 Jun. 2024

・Impact of Reverse Current Spreading on Diode Conduction Reliability of SBD-Embedded SiC-MOSFET with Deep p-Shield Structure
Shunsuke Asaba, et al.
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 3 Jun. 2024

・Improving the Short-Circuit Capability of RC-IEGT by Backside Double P-Ring Structure
Ryohei Gejo, et al.
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 3 Jun. 2024

・Packaging Technology Trends for High Power Semiconductor Power Module with Ceramic Substrate
Fumiyoshi Kawashiro
Smart Additive Manufacturing, Design & Evaluation (Smart MADE) 2024, 11 Apr. 2024

・Detail Analysis of defects on GaN-on-Si Epitaxial Wafers related to the High Voltage GaN Power Devices
Yasuhiro Isobe, et al.
The 14th International Conference on Nitride Semiconductors (ICNS-14), 16 Nov. 2023

・Investigation of Problems with Current Filament Simulation Model for Two-dimensional Multi-cell Structure in IGBTs
Takeshi Suwa
2023 International Conference on Solid State Devices and Materials (SSDM),7 Sep. 2023

・Performance and reliability improvement in Silicon carbide power devices
Hiroshi Kono
2023 Wide Bandgap Power Devices and Applications (WiPDA) in Asia, 29 Aug. 2023

・High Performance Dual Field Plate Trench MOSFETs for Middle-Voltage Applications
Shuhei Tokuyama, et al.
2023 35rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 29 May 2023

・Measuring of parasitic resistance of stacked chip of Si power device
Tatsuya Ohguro, et al.
2023 35th International Conference on Microelectronic Test Structures (ICMTS), 28 May 2023

・New Extraction Method for Intrinsic Qrr of Power MOSFETs
T. Hara, et al.
2023 35th International Conference on Microelectronic Test Structures (ICMTS), 28 May 2023

・On-Resistance Measurements of Low Voltage MOS-FET at wafer level
Kohei Oasa, et al.
2023 35th International Conference on Microelectronic Test Structures (ICMTS), 28 May 2023

・A Novel 2200 V Schottky Barrier Diode-Embedded SiC MOSFET Module
Takahiro Ogata, et al.
2023 Power Conversion and Intelligent Motion (PCIM) Europe, 11 May 2023

・Current Adjustable Gate Drive IC with Propagation Delay Reduction Technique for High-Speed Power Transistors
Hideaki Majima, et al.
2023 Power Conversion and Intelligent Motion (PCIM) Europe, 11 May 2023

・Thermal Impact of Solder Voids under Chip of Power Semiconductors
T. Tabakoya, et al.
2023 International Conference on Electronics Packaging (ICEP), 20 Apr. 2023

・Advanced Process Control Model for Trench Shape of Power Devices 
Takumi Ito
2022 International Symposium on Semiconductor Manufacturing (ISSM),13 Dec. 2022

・Design guidelines for SBD integration into SiC-MOSFET breaking Ron A - diode conduction capability trade-off
S. Asaba, et al.
2022 International Electron Devices Meeting (IEDM),5 Dec.2022

・Poly Back Seal Effect on Platinum Solid Phase Diffusion in High Speed Switching Diodes
Yuhki Fujino
2022 International Conference on Solid State Devices and Materials (SSDM),29 Sep. 2022

・4.5 kV Double-gate RC-IEGT with Hole Control Gate
Ryohei Gejo, et al.
2022 34rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 24 May 2021

・Introduction of Highly Reliable Versatile Analog　Platform with Embedded NVM for Automotive　Applications
Kanako Komatsu, et al.
2022 34rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 23 May 2021

・650-V and 1200-V SiC MOSFETs with Low RonA and Strong Reduction in Switching Losses
Masaru Furukawa, et al.
PCIM Europe Conference 2022, 12 May 2022

・Improving the VF-IR Trade-Off in 650-V/1200-V SiC SBD by Develop ment of Schottky Metal and Optimi zation of Device Structure
Kei Tanihira, et al.
PCIM Europe Conference 2022, 11 May 2022

・An Approach to Create Trench Depth Prediction Model
Xueting Wang, et al.
AEC/APC Symposium Asia, 4 Nov. 2021

・2D-TCAD Simulation Study of Capture Layer and Repellent Layer of Current Filament in Trench-Gate IGBTs
Takeshi Suwa
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 27 Sep. 2021

・A 17MHz Wide-band Isolated Current Sensor for D-mode GaN Half-bridge
Hideaki Majima, et al.
2021 International Conference on Solid State Devices and Materials (SSDM), 8 Sep. 2021

・Gate Drive Techniques of Gate-Connected Trench Field Plate Power MOSFETs to Reduce Both Switching and Conduction Losses
Tatsuya Nishiwaki, et al.
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 3 Jun. 2021

・Stacked Chip of Si Power Device with Double Side Cu Plating for Low on-Resistance
Tatsuya Ohguro, et al.
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 3 Jun. 2021

・Drift Layer Design Utilizing Intermediate Boron Ion-Implantation for 100-V-Class Two-step-Oxide Field-Plate Trench MOSFET to Improve Switching Loss
Kenya Kobayashi, et al.
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 3 Jun. 2021

・Novel Connector Mechanism Using Anisotropic Conductive Rubber for Trillion-Node Engine as an IoT Edge Platform
Kenichi Agawa, et al.
2021 IEEE 71st Electronic Components and Technology Conference (ECTC), 1 Jun. 2021

・Improving the Specific on-Resistance and short-Circuit Ruggedness tradeoff of 1.2-kV-Class SBD-Embedded SiC MOSFETs Through Cell Pitch Reduction and Internal Resistance
Hiroshi Kono, et al.
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 31 May 2021

・Study of Unique ESD Tolerance Dependence on Backgate Ratio for RESURF LDMOS with Rated Voltage Variation
Kanako Komatsu, et al.
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 31 May 2021

・High Performance and Reliable Si Power Devices with double side Cu plate
Tatsuya Ohguro, et al.
5^th International Electric Vehicle Technology Conference (EVTeC), 26 May 2021

・MCU and Motor Driver Leaf Modules of Coin-Sized PCBs in an Open-Innovation IoT/CPS Platform
Kenichi Agawa, et al.
2021 International Conference on Electronics Packaging (ICEP 2021), 12 May 2021

・3.3kV All SiC MOSFET Module with Schottky Barrier Diode Embedded SiC MOSFET
Hiroshi Kono, et al.
PCIM Europe Conference 2021, 5 May 2021

・Process Optimization of Trench Field Plate Power MOSFETs with Sequential Phosphorus-Doped Silicon
Kota Tomita, et al.
2020 International Symposium on Semiconductor Manufacturing (ISSM), 15 Dec. 2020

・Quality Control of Trench Field Plate Power MOSFETs by Correlation of Trench Angle and Wafer Warpage
Hiroaki Kato, et al.
2020 International Symposium on Semiconductor Manufacturing (ISSM), 15 Dec. 2020

・Analysis of Dependence of dVCE/dt on Turn-off Characteristics with a 1200 V Double-gate IGBT
Yoko Iwakaji, et al.
2020 International Conference on Solid State Devices and Materials (SSDM), 30 Sep. 2020

・Analysis of Recovery Oscillation Inhibition for Cathode Design of a 1200 V Silicon Diode Using an LCR Circuit Model
Kaori Fuse, et al.
2020 International Conference on Solid State Devices and Materials (SSDM), 30 Sep. 2020

・3D Packaging and Integration Technology using Photosensitive Mold
Kentaro Mori, et al.
2020 International Conference on Solid State Devices and Materials (SSDM), 28 Sep. 2020

・Investigation of the relationship between current filament movement and local heat generation in IGBTs by using modified avalanche model of TCAD
Takeshi Suwa
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 28 Sep. 2020

・Investigating the Highly Tolerant LDMOS Cell Array Design Against the Negative Carrier Injection and the ESD Events
Kanako Komatsu, et la.
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 17 Sep. 2020

・Investigation of the Breakdown Voltage Degradation Under Hot-Carrier Injection in STI-Based PchLDMOS Transistors
Hirotaka Kasai, et al.
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 17 Sep. 2020

・High Accurate Representation of Turn-on Switching Characteristics by New IGBT and FWD Compact Models for High Power Applications
Takeshi Mizoguchi, et al.
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 17 Sep. 2020

・Improvement of Cosmic Ray Robustness in IGBT with Deep-N Layer
Daiki Yoshikawa, et al.
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 17 Sep. 2020

・Stable Cascode GaN HEMT Operation by Direct Gate Drive
Toru Sugiyama, et al.
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 15 Sep. 2020

・Extended Concept of MAMR and Its Performance and Reliability
Akihiko Takeo
The 31st Magnetic Recording Conference (TMRC 2020), 18 Aug. 2020

・Improved Reliability of 1.2kV SiC MOSFET by Preventing the Intrinsic Body Diode Operation
Masaru Furukawa, et al.
PCIM Europe Conference 2020, 7 Jul. 2020

・Sub-GHz Ranging System;Implementation and Evaluation
Masayoshi Oshiro, et al.
2020 IEEE 91st Vehicular Technology Conference (VTC2020-Spring), 25 May 2020

・Process Control Technique to Dramatically Reduce Voids in Phosphorus-Doped Poly-Silicon for Trench Field-Plate MOSFETs 
Saya Shimomura, et al.
2019 Joint International Symposium on e-Manufacturing & Design Collaboration(eMDC) & Semiconductor Manufacturing (ISSM), 6 Sept. 2019 

・Novel Manufacturing Process for Si Superjunction Power MOSFETs with Air-Gap and Insulating Cap Layer
Yuhki Fujino, et al.
2019 Joint International Symposium on e-Manufacturing & Design Collaboration(eMDC) & Semiconductor Manufacturing (ISSM), 6 Sept. 2019 

・Investigation of TCAD Calibration for Saturation and Tail Current of 6.5kV IGBTs
Takeshi Suwa, et al.
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 4 Sept. 2019 

・Analysis of Oscillatory Phenomena in Cathode Designs for 1200 V Diodes Using an LCR Circuit Model in Reverse Recovery
Kaori Fuse, et al.
2019 International Conference on Solid State Devices and Materials (SSDM), 4 Sept. 2019 

・3D Fan-Out Package Technology with Photosensitive Through Mold Interconnects
Kentaro Mori, et al.
2019 IEEE 69th Electronic Components and Technology Conference (ECTC), 31 May 2019 

・Cu Double Side Plating Technology for High Performance and Reliable Si Power Devices
Hitoshi Kobayashi, et al.
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 23 May 2019 

・Design Method and Mechanism Study of LDMOS to Conquer Stress Induced Degradation of Leakage Current and HTRB Reliability
Kanako Komatsu, et al.
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 22 May 2019 

・High Accurate IGBT/IEGT Compact Modeling for Prediction of Power Efficiency and EMI Noise
Takeshi Mizoguchi, et al.
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 22 May 2019 

・Breakthrough in Channel Mobility Limit of Nitrided Gate Insulator for SiC DMOSFET with Novel High-temperature N2 Annealing
Shunsuke Asaba, et al.
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 21 May 2019 

・100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance
Kenya Kobayashi, et al.
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 21 May 2019 

・Alpha-Particle Shielding Effect of Thick Copper Plating Film on Power MOSFETs
Tatsuya Nishiwaki, et al.
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 21 May 2019 

・Inter-Frame Smart-Accumulation Technique for Long-Range and High-Pixel Resolution LiDAR
Ken Tanabe, et al.
2019 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS), 19 April 2019 

・A 20.5TOPS and 217.3GOPS/mm² Multicore SoC with DNN Accelerator and Image Signal Processor Complying with ISO26262 for Automotive Applications
Yutaka Yamada, et al.
2019 IEEE International Solid- State Circuits Conference - (ISSCC), 19 Feb. 2019