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Conferences and Awards

Introducing presentations by the Group’s researchers at international conferences and awards.

Conference

2021

・An Approach to Create Trench Depth Prediction Model
Xueting Wang, et al.
AEC/APC Symposium Asia, 4 Nov. 2021

・2D-TCAD Simulation Study of Capture Layer and Repellent Layer of Current Filament in Trench-Gate IGBTs
Takeshi Suwa
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 27 Sep. 2021

・A 17MHz Wide-band Isolated Current Sensor for D-mode GaN Half-bridge
Hideaki Majima, et al.
2021 International Conference on Solid State Devices and Materials (SSDM), 8 Sep. 2021

・Gate Drive Techniques of Gate-Connected Trench Field Plate Power MOSFETs to Reduce Both Switching and Conduction Losses
Tatsuya Nishiwaki, et al.
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 3 Jun. 2021

・Stacked Chip of Si Power Device with Double Side Cu Plating for Low on-Resistance
Tatsuya Ohguro, et al.
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 3 Jun. 2021

・Drift Layer Design Utilizing Intermediate Boron Ion-Implantation for 100-V-Class Two-step-Oxide Field-Plate Trench MOSFET to Improve Switching Loss
Kenya Kobayashi, et al.
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 3 Jun. 2021

・Novel Connector Mechanism Using Anisotropic Conductive Rubber for Trillion-Node Engine as an IoT Edge Platform
Kenichi Agawa, et al.
2021 IEEE 71st Electronic Components and Technology Conference (ECTC), 1 Jun. 2021

・Improving the Specific on-Resistance and short-Circuit Ruggedness tradeoff of 1.2-kV-Class SBD-Embedded SiC MOSFETs Through Cell Pitch Reduction and Internal Resistance
Hiroshi Kono, et al.
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 31 May 2021

・Study of Unique ESD Tolerance Dependence on Backgate Ratio for RESURF LDMOS with Rated Voltage Variation
Kanako Komatsu, et al.
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 31 May 2021

High Performance and Reliable Si Power Devices with double side Cu plate
Tatsuya Ohguro, et al.
5th International Electric Vehicle Technology Conference (EVTeC), 26 May 2021

MCU and Motor Driver Leaf Modules of Coin-Sized PCBs in an Open-Innovation IoT/CPS Platform
Kenichi Agawa, et al.
2021 International Conference on Electronics Packaging (ICEP 2021), 12 May 2021

3.3kV All SiC MOSFET Module with Schottky Barrier Diode Embedded SiC MOSFET
Hiroshi Kono, et al.
PCIM Europe Conference 2021, 5 May 2021

2020

Process Optimization of Trench Field Plate Power MOSFETs with Sequential Phosphorus-Doped Silicon
Kota Tomita, et al.
2020 International Symposium on Semiconductor Manufacturing (ISSM), 15 Dec. 2020

Quality Control of Trench Field Plate Power MOSFETs by Correlation of Trench Angle and Wafer Warpage
Hiroaki Kato, et al.
2020 International Symposium on Semiconductor Manufacturing (ISSM), 15 Dec. 2020

Analysis of Dependence of dVCE/dt on Turn-off Characteristics with a 1200 V Double-gate IGBT
Yoko Iwakaji, et al.
2020 International Conference on Solid State Devices and Materials (SSDM), 30 Sep. 2020

Analysis of Recovery Oscillation Inhibition for Cathode Design of a 1200 V Silicon Diode Using an LCR Circuit Model
Kaori Fuse, et al.
2020 International Conference on Solid State Devices and Materials (SSDM), 30 Sep. 2020

3D Packaging and Integration Technology using Photosensitive Mold
Kentaro Mori, et al.
2020 International Conference on Solid State Devices and Materials (SSDM), 28 Sep. 2020

Investigation of the relationship between current filament movement and local heat generation in IGBTs by using modified avalanche model of TCAD
Takeshi Suwa
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 28 Sep. 2020

Investigating the Highly Tolerant LDMOS Cell Array Design Against the Negative Carrier Injection and the ESD Events
Kanako Komatsu, et la.
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 17 Sep. 2020

Investigation of the Breakdown Voltage Degradation Under Hot-Carrier Injection in STI-Based PchLDMOS Transistors
Hirotaka Kasai, et al.
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 17 Sep. 2020

High Accurate Representation of Turn-on Switching Characteristics by New IGBT and FWD Compact Models for High Power Applications
Takeshi Mizoguchi, et al.
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 17 Sep. 2020

Improvement of Cosmic Ray Robustness in IGBT with Deep-N Layer
Daiki Yoshikawa, et al.
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 17 Sep. 2020

Stable Cascode GaN HEMT Operation by Direct Gate Drive
Toru Sugiyama, et al.
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 15 Sep. 2020

Extended Concept of MAMR and Its Performance and Reliability
Akihiko Takeo
The 31st Magnetic Recording Conference (TMRC 2020), 18 Aug. 2020

・Improved Reliability of 1.2kV SiC MOSFET by Preventing the Intrinsic Body Diode Operation
Masaru Furukawa, et al.
PCIM Europe Conference 2020, 7 Jul. 2020

Sub-GHz Ranging System;Implementation and Evaluation
Masayoshi Oshiro, et al.
2020 IEEE 91st Vehicular Technology Conference (VTC2020-Spring), 25 May 2020

2019

・Process Control Technique to Dramatically Reduce Voids in Phosphorus-Doped Poly-Silicon for Trench Field-Plate MOSFETs 
Saya Shimomura, et al.
2019 Joint International Symposium on e-Manufacturing & Design Collaboration(eMDC) & Semiconductor Manufacturing (ISSM), 6 Sept. 2019 

・Novel Manufacturing Process for Si Superjunction Power MOSFETs with Air-Gap and Insulating Cap Layer
Yuhki Fujino, et al.
2019 Joint International Symposium on e-Manufacturing & Design Collaboration(eMDC) & Semiconductor Manufacturing (ISSM), 6 Sept. 2019 

・Investigation of TCAD Calibration for Saturation and Tail Current of 6.5kV IGBTs
Takeshi Suwa, et al.
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 4 Sept. 2019 

・Analysis of Oscillatory Phenomena in Cathode Designs for 1200 V Diodes Using an LCR Circuit Model in Reverse Recovery
Kaori Fuse, et al.
2019 International Conference on Solid State Devices and Materials (SSDM), 4 Sept. 2019 

・3D Fan-Out Package Technology with Photosensitive Through Mold Interconnects
Kentaro Mori, et al.
2019 IEEE 69th Electronic Components and Technology Conference (ECTC), 31 May 2019 

・Cu Double Side Plating Technology for High Performance and Reliable Si Power Devices
Hitoshi Kobayashi, et al.
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 23 May 2019 

・Design Method and Mechanism Study of LDMOS to Conquer Stress Induced Degradation of Leakage Current and HTRB Reliability
Kanako Komatsu, et al.
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 22 May 2019 

・High Accurate IGBT/IEGT Compact Modeling for Prediction of Power Efficiency and EMI Noise
Takeshi Mizoguchi, et al.
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 22 May 2019 

・Breakthrough in Channel Mobility Limit of Nitrided Gate Insulator for SiC DMOSFET with Novel High-temperature N2 Annealing
Shunsuke Asaba, et al.
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 21 May 2019 

・100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance
Kenya Kobayashi, et al.
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 21 May 2019 

・Alpha-Particle Shielding Effect of Thick Copper Plating Film on Power MOSFETs
Tatsuya Nishiwaki, et al.
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 21 May 2019 

・Inter-Frame Smart-Accumulation Technique for Long-Range and High-Pixel Resolution LiDAR
Ken Tanabe, et al.
2019 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS), 19 April 2019 

・A 20.5TOPS and 217.3GOPS/mm2 Multicore SoC with DNN Accelerator and Image Signal Processor Complying with ISO26262 for Automotive Applications
Yutaka Yamada, et al.
2019 IEEE International Solid- State Circuits Conference - (ISSCC), 19 Feb. 2019

2018

・The electrical effect on Schottky barrier diodes of emitted hydrogen from dielectric films
Tatsuya Shiraishi,
2018 International Symposium on Semiconductor Manufacturing (ISSM), 11 Dec. 2018

・Predictive process control for change in chemical dry etching equipment condition
Miyuki Maruta, et al.
2018 International Symposium on Semiconductor Manufacturing (ISSM), 11 Dec. 2018

・Process Control Technique to Reduce Wafer Warpage for Trench Field Plate Power MOSFET
Hiroaki Kato, et al.
2018 International Symposium on Semiconductor Manufacturing (ISSM), 11 Dec. 2018

・Connection Structure Using Rubber Connectors in the IoT Edge Platform, Trillion Node Engine
Kenichi Agawa, et al.
2018 IEEE CPMT Symposium Japan (ICSJ), 19, Nov. 2018 

・An 113DB-Link-Budget Bluetooth-5 SoC with an 8dBm 22%-Efficiency TX
T. Wang, et al.
2018 IEEE Symposium on VLSI Circuits, 19 June 2018

・Hot-carrier induced off-state leakage current increase of LDMOS and approach to overcome the phenomenon
Keita Takahashi, et al.
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 16 May 2018

・Low noise superjunction MOSFET with integrated snubber structure
Hiroaki Yamashita, et al.
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 14 May 2018

・Breakthrough of drain current capability and on-resistance limits by gate-connected superjunction MOSFET
Wataru Saito,
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 14 May 2018

・Data selection and de-noising based on reliability for long-range and high-pixel resolution LiDAR
Ken Tanabe, et al.
2018 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS), 20 April 2018

・Evaluation methodology for current collapse phenomenon of GaN HEMTs
Toru Sugiyama, et al.
2018 IEEE International Reliability Physics Symposium (IRPS), 13 March 2018

2017

・New Characterization Technique for Detection of Atomic-sized Crystalline Defects and Strain Using Moiré Method
Masako Kodera, et al.
2017 International Conference on Solid State Devices and Materials (SSDM), 22 Sep. 2017

・Hot-carrier Induced Drastic Off-state Leakage Current Degradation in STI-based N-channel LDMOS
Keita Takahashi, et al.
2017 International Conference on Solid State Devices and Materials (SSDM), 21 Sep. 2017

・Modeling of time dependent breakdown voltage degradation in Trench Field Plate Power MOSFET
Tatsuya Nishiwaki, et al.
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 1 June 2017

・HBM robustness optimization of fully isolated Nch-LDMOS for negative input voltage using unique index parameter
Fumio Takeuchi, et al.
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 1 June 2017

・Process design of superjunction MOSFETs for high drain current capability and low on-resistance
Wataru Saito,
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 1 June 2017

・High aspect ratio deep trench termination (HARDT2) technique surrounding die edge as dielectric wall to improve high voltage device area efficiency
Takuya Yamaguchi, et al.
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 1 June 2017

・Direct photo emission monitoring for analysis of IGBT destruction mechanism using streak camera
Tomoko Matsudai, et al.
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 30 May 2017

・Relation between UIS Withstanding Capability and Gate Leakage Currents for High Voltage GaN-HEMTs
Toshiyuki Naka, et al.
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 30 May 2017

Award

2021

・Philippine Economic Zone Authority (PEZA)
Billionaire’s Award for the PEZA Excellence Awards

Toshiba Information Equipment (Philippines), Inc.
Details

2020

・International Electrotechnical Commission (IEC)
1906 Award
Toshiba Electronic Devices & Storage Corporation Yoshinori Fukuba
Details

2019

・MIPI® Alliance
2018 MIPI Membership Awards
MIPI Lifetime Achievement Award
Toshiba Electronics Europe GmbH Ariel LASRY
Details

2017

・MIPI® Alliance
2017 MIPI Membership Awards
MIPI Corporate Award
Toshiba Electronic Devices & Storage Corporation
Details

Content of research and development page

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Electronic Devices & Storage Research & Development Center
Introducing the semiconductor and storage R&D structure
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