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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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Technical Reviews

We, Toshiba Electronic Devices & Storage Corporation are engaged in research and development of semiconductor and storage technologies that will solve social issues and create a prosperous future based on our inherited technological capabilities.

All Designs(77designs)

An Approach to Create Trench Depth Prediction Model
Conference Paper

X. Wang et al., “An Approach to Create Trench Depth Prediction Model”, AEC/APC Symposium Asia 2021, Virtual symposium, 2021

03/2022
2D-TCAD Simulation Study of Capture Layer and Repellent Layer of Current Filament in Trench-Gate IGBTs
Conference Paper

T. Suwa, “2D-TCAD Simulation Study of Capture Layer and Repellent Layer of Current Filament in Trench-Gate IGBTs”, 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, TX, USA, 2021, pp. 32-35. Doi:10.1109/SISPAD54002.2021.9592570
© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore(https://ieeexplore.ieee.org/document/9592570)

03/2022
Novel Connector Mechanism Using Anisotropic Conductive Rubber for Trillion-Node Engine as an IoT Edge Platform
Conference Paper

K. Agawa et al., “Novel Connector Mechanism Using Anisotropic Conductive Rubber for Trillion-Node Engine as an IoT Edge Platform”, 2021 IEEE 71st Electronic Components and Technology Conference (ECTC), San Diego, CA, USA, 2021, pp. 514-519. Doi:10.1109/ECTC32696.2021.00092
© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore(https://ieeexplore.ieee.org/document/9501793)

03/2022
Process Technology for MOS-Type GaN Devices Offering High Channel Mobility and High Reliability
Toshiba Review

GaN power semiconductor devices are expected to contribute to the realization of small, low-loss power electronics equipment. In particular, MOS-type GaN devices are promising candidates for next-generation power devices that can achieve normally-o­ff operation by themselves in addition to high-speed switching. The Toshiba Group has developed a process technology for MOS-type GaN devices that makes it possible to selectively control the crystallization of an AlN film on the recessed gate structure.

* Toshiba Review (Vol.75, No.6, November 2020)

11/2021
Miniaturization of Photorelay Packages Using Chip Stacking Technologies
Toshiba Review

A trend toward the replacement of conventional mechanical relays with photorelays, which provide several advantages including smaller size, higher speed switching, longer lifetime, and lower power consumption, has recently been progressing in line with the introduction of photorelays offering more sophisticated and more efficient functions. We have developed new photorelay products that achieve smaller size and higher rated on-state current by utilizing its proprietary chip stacking technologies to attach PDA and LED chips to a MOSFET chip, in addition to a package structure that dissipates the heat of parts more efficiently.

* Toshiba Review (Vol.75, No.6, November 2020)

11/2021
Low-Capacitance TVS Diodes for High-Speed Data Communications
Toshiba Review

The widespread dissemination of mobile devices has consequently led to growing demand for countermeasures against ESD generated by the frequent contact of such devices with the human body. We are actively focusing on the development of TVS diodes that can improve the reliability of electronic devices by protecting them against ESD.

* Toshiba Review (Vol.75, No.6, November 2020)

11/2021
1.2 kV-Class SiC MOSFET Equipped with Embedded SBD for Improvement of Reliability
Toshiba Review

SiC MOSFETs are a key type of power device for power supply units because of the superior performance of SiC materials. However, improvement of the reliability of SiC MOSFETs is hindered by issues associated with low carrier conductivity as a result of increased crystal defects. We have developed a new device structure for 1.2 kV-class SiC MOSFETs that can improve reliability by means of an embedded SBD located in parallel to each pn diode so as to prevent current flowing through the diode.

* Toshiba Review (Vol.75, No.6, November 2020)

11/2021
Low-Voltage Power MOSFET Technologies for Next-Generation Large-Capacity Communication Systems
Toshiba Review

5G mobile communications commenced in Japan in March 2020 in response to the increasing volume of content requiring large-capacity and high-speed communication capability. As increased data traffic volumes lead to a dramatic increase in the power consumption of base stations for mobile communications, it has become necessary to further improve the efficiency of power supply units in these base stations. We have developed 80 V power MOSFET products featuring superior on-resistance, gate charge, and reverse recovery charge characteristics by utilizing its proprietary U-MOS X-H process.

* Toshiba Review (Vol.75, No.6, November 2020)

11/2021
High-Speed, High-Accuracy Simulation Technique to Evaluate Thermal Performance and EMI Noise of Automotive Power Semiconductors
Toshiba Review

With the increasing use of electronic components, the introduction of simulation technologies using MBD methods to verify the functions and performance of overall systems has been rapidly expanding in order to efficiently develop in-vehicle systems. We have developed the technique focusing on the evaluation of thermal performance and EMI noise in switching operations and confirmed the effectiveness of this approach using the technique when selecting an optimal MOSFET device and switching speed.

* Toshiba Review (Vol.76, No.5, September 2021)

10/2021
High-Reliability FC-MAMR Nearline HDD with a Capacity of 18 TB
White Papers

As demand for nearline HDDs for data centers is growing, the requirements for data storage solutions for both cyber and physical spaces are diversifying, making it necessary to develop new innovative technologies for not only reading but also writing data. High-reliability technologies are attracting plenty of attention as a means to overcome the limit to the HDD recording density and thereby solve the information explosion problem.

10/2021
Gate drive techniques of Gate-connected Trench Field Plate Power MOSFETs to reduce both switching and conduction losses
Conference Paper

T. Nishiwaki et al., “Gate drive techniques of Gate-connected Trench Field Plate Power MOSFETs to reduce both switching and conduction losses”, 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, Japan, 2021, pp. 155-158. Doi: 10.23919/ISPSD50666.2021.9452278 © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/9452278)

09/2021
Stacked chip of Si power device with double side Cu plating for low on-resistance
Conference Paper

T. Ohguro et al., “Stacked chip of Si power device with double side Cu plating for low on-resistance”, 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, Japan, 2021, pp. 187- 190. Doi: 10.23919/ISPSD50666.2021.9452216 © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/9452216)

09/2021
Drift Layer Design utilizing Intermediate Boron Ion-implantation for 100-V-class Two-step-oxide Field-Plate Trench MOSFET to Improve Switching Loss
Conference Paper

K. Kobayashi et al., “Drift Layer Design utilizing Intermediate Boron Ion-implantation for 100-V-class Two-step-oxide Field-Plate Trench MOSFET to Improve Switching Loss”, 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, Japan, 2021, pp. 191-194. Doi: 10.23919/ISPSD50666.2021.9452300 © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/9452300)

09/2021
Improving the specific on-resistance and short-circuit ruggedness tradeoff of 1.2-kV-class SBD-embedded SiC MOSFETs through cell pitch reduction and internal resistance optimization
Conference Paper

H. Kono et al., “Improving the specific on-resistance and short-circuit ruggedness tradeoff of 1.2-kV-class SBD-embedded SiC MOSFETs through cell pitch reduction and internal resistance optimization”, 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, Japan, 2021, pp. 227-230. Doi: 10.23919/ISPSD50666.2021.9452314 © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/9452314)

09/2021
Study of Unique ESD Tolerance Dependence on Backgate Ratio for RESURF LDMOS with Rated Voltage Variation
Conference Paper

K. Komatsu et al., “Study of Unique ESD Tolerance Dependence on Backgate Ratio for RESURF LDMOS with Rated Voltage Variation”, 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, Japan, 2021, pp. 315-318. Doi: 10.23919/ISPSD50666.2021.9452267 © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/9452267)

09/2021
High Performance and Reliable Si Power Devices with double side Cu plate
Conference Paper

T. Ohguro et al., “High Performance and Reliable Si Power Devices with double side Cu plate”, 5th International Electric Vehicle Technology Conference (EVTeC 2021), Online conference, 2021 © Society of Automotive Engineers of Japan, Inc.

09/2021
3.3 kV all SiC MOSFET module with Schottky barrier diode embedded SiC MOSFET
Conference Paper

H. Kono, T. Iguchi, T. Hirakawa, H. Irifune, T. Kawano, M. Furukawa, K. Sano, M. Yamaguchi,H. Suzuki, and G. Tchouangue, “3.3 kV all SiC MOSFET module with Schottky barrier diode embedded SiC MOSFET”, PCIM Europe Conference 2021, Online, 2021, pp. 914-919.

09/2021
IGBT Device Model Facilitating Highly Accurate Model-Based Development
Toshiba Review

With the progressive introduction of model-based development (MBD) processes utilizing simulation technologies into a broad range of system design work in the fields of power electronics and in-vehicle electronics. We have developed an IGBT device model taking into consideration the dynamic flow of both electrons and holes in switching operations as a replacement for conventional models.

* Toshiba Review (Vol.75, No.6, November 2020)

08/2021
eFuse ICs Enhancing Protection of Power Supply Lines in Compliance with IEC 62368-1
Toshiba Review

IEC 62368-1, a new safety standard for audiovisual and information and communication equipment, was introduced in December 2020. In order to enhance the protection of power supply lines of such equipment in compliance with IEC 62368-1, which is a hazard based standard, demand has arisen for electronic fuse integrated circuits (eFuse ICs) offering higher protection performance compared with conventional protective devices, as typified by physical fuses.

* Toshiba Review (Vol.75, No.6, November 2020)

08/2021
IGBTs and IEGTs to Achieve Energy Saving in Various Applications from Home Appliances to Power Transmission and Distribution Equipment
Toshiba Review

IGBTs are widely used in various applications ranging from home appliances for electric power transmission and distribution systems. We have developed the following products by optimizing the structures of the respective devices: (1) voltage-resonant type IGBTs that can operate at switching frequencies of several tens of kHz for equipment such as home appliances, and (2) press-pack IEGTs with a high breakdown voltage and reduced conduction loss.

* Toshiba Review (Vol.75, No.6, November 2020)

08/2021
Latest Trends in and Future Outlook for Discrete Semiconductor Technologies
Toshiba Review

We have been progressively developing and introducing a wide variety of discrete semiconductor products for electric energy conversion and protection applications ranging from small- to large-scale power systems, and is also making e¬fforts to develop advanced technologies and commercialize products applying these technologies.

* Toshiba Review (Vol.75, No.6, November 2020)

08/2021
Process Optimization of Trench Field Plate Power MOSFETs with Sequential Phosphorus-Doped Silicon
Conference Paper

K. Tomita et al., “Process Optimization of Trench Field Plate Power MOSFETs with Sequential Phosphorus-Doped Silicon”, 2020 International Symposium on Semiconductor Manufacturing (ISSM), Tokyo, Japan, 2020, doi: 10.1109/ISSM51728.2020.9377528 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore

 (https://ieeexplore.ieee.org/document/9377528)

07/2021
Quality Control of Trench Field Plate Power MOSFETs by Correlation of Trench Angle and Wafer Warpage
Conference Paper

H. Kato et al., “Quality Control of Trench Field Plate Power MOSFETs by Correlation of Trench Angle and Wafer Warpage”, 2020 International Symposium on Semiconductor Manufacturing (ISSM), Tokyo, Japan, 2020, doi: 10.1109/ISSM51728.2020.9377512 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore 

(https://ieeexplore.ieee.org/document/9377512)

07/2021
3D Packaging and Integration Technology using Photosensitive Mold
Conference Paper

K. Mori et al., “3D Packaging and Integration Technology using Photosensitive Mold”, Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials (SSDM),Virtual conference, 2020, pp131-132 © Japan Society of Applied Physics

06/2021
Analysis of Recovery Oscillation Inhibition for Cathode Design of a 1200 V Silicon Diode Using an LCR Circuit Model
Conference Paper

K. Fuse et al., “Analysis of Recovery Oscillation Inhibition for Cathode Design of a 1200 V Silicon Diode Using an LCR Circuit Model”, Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials (SSDM), Virtual conference, 2020, pp261-262 © Japan Society of Applied Physics

06/2021
Analysis of Dependence of dVCE/dt on Turn-off Characteristics with a 1200 V Double-gate IGBT
Conference Paper

Y. Iwakaji et al., “Analysis of Dependence of dVCE/dt on Turn-off Characteristics with a 1200 V Double-gate IGBT”, Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials (SSDM), Virtual conference, 2020, pp257-258 © Japan Society of Applied Physics

06/2021
Investigation of the relationship between current filament movement and local heat generation in IGBTs by using modified avalanche model of TCAD
Conference Paper

T. Suwa, “Investigation of the relationship between current filament movement and local heat generation in IGBTs by using modified avalanche model of TCAD”, 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 2020, pp. 141-144. Doi: 10.23919/SISPAD49475.2020.9241680 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore

(https://ieeexplore.ieee.org/document/9241680)

05/2021
Improved reliability of 1.2kV SiC MOSFET by preventing the intrinsic body diode operation
Conference Paper

M. Furukawa, H. Kono, K. Sano, M. Yamaguchi, H. Suzuki, T. Misao and G. Tchouangue, “Improved reliability of 1.2kV SiC MOSFET by preventing the intrinsic body diode operation”, PCIM Europe Conference 2020, Germany, 2020

05/2021
Investigation of the Breakdown Voltage Degradation under Hot-Carrier Injection in STI-based PchLDMOS Transistors
Conference Paper

H. Kasai et al., “Investigation of the Breakdown Voltage Degradation under Carrier Injection in STI-based PchLDMOS Transistors,” 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, pp. 427-430, doi: 10.1109/ISPSD46842.2020. 9170073 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/9170073)

01/2021
Sub-GHz Phase-Based Ranging System: Implementation and Evaluation
Conference Paper

M. Oshiro, et al., “Sub-GHZ Phased-Based Ranging System: Implementation and Evaluation,” 2020 IEEE 91st Vehicular Technology Conference (VTC2020-Spring), Antwerp, Belgium, 2020, pp.1-7, doi: 10.1109/VTC2020-Spring48590.2020.9128575 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore

(https://ieeexplore.ieee.org/document/9128575)

01/2021
High Accurate Representation of Turn-on Switching Characteristics by New IGBT and FWD Compact Models for High Power Applications
Conference Paper

T. Mizoguchi et al., “High Accurate Representation of Turn-on Switching Characteristics by New IGBT and FWD Compact Models for High Power Applications,” 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, pp. 478-481, doi: 10.1109/ISPSD46842.2020.9180189 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore

(https://ieeexplore.ieee.org/document/9170189)

12/2020
Investigating the Highly Tolerant LDMOS Cell Array Design against the Negative Carrier Injection and the ESD Events
Conference Paper

K. Komatsu et al., “Investigating the Highly Tolerant LDMOS Cell Array Design against the Negative Carrier Injection and the ESD Events,” 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, pp. 404-407, doi: 10.1109/ISPSD46842.2020.9170188 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/9170188)

12/2020
Improvement of Cosmic Ray Robustness in IGBT with Deep-N layer
Conference Paper

D. Yoshikawa et al., “Improvement of Cosmic Ray Robustness in IGBT with Deep-N layer,” 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, pp. 486-489, doi: 10.1109/ISPSD46842.2020.9170029 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/9170029)

12/2020
Stable cascode GaN HEMT operation by direct gate drive
Conference Paper

T. Sugiyama et al., “Stable cascode GaN HEMT operation by direct gate drive,” 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, pp. 22-25, doi: 10.1109/ISPSD46842.2020.9170130 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/9170130)

12/2020
Secure MCU Platform Techniques to Ensure Security of Cyber-Physical Systems
Toshiba Review

Microcontroller units (MCUs) for IoT devices are required both a secure communication function for connecting to the network and a firmware update function to enhance integrity and availability. What are MCUs that can establish and manage the network connections of IoT devices easily and securely, and secure firmware rotation technique for firmware update that can protect IoT devices?

*Toshiba Review (Vol.74, No.6, November 2019)

08/2020
Microwave-assisted Magnetic Recording Technology for HDDs Achieving Higher Recording Density
Toshiba Review

Toshiba Group has been engaged in the development of microwave-assisted magnetic recording (MAMR) technology and has achieved a technological breakthrough in increasing the density of HDDs using a head with a spin torque oscillator (STO) to enhance the recording performance.

* Toshiba Review (Vol.74, No.6, November 2019)

07/2020
Large-Capacity HDDs Applying SMR Technology for Data Centers
Toshiba Review

Large-capacity HDDs that allow data centers to store huge volumes of electronic information have become increasingly important as a key product for the development of information infrastructure in recent years. What is shingled magnetic recording (SMR) technology that increases the capacity of HDDs by overwriting data on a recording track analogous to the shingling of a roof?

* Toshiba Review (Vol.74, No.6, November 2019)

04/2020
Nearline TDMR HDDs with Industry’s Largest Capacity of 16 Tbytes
Toshiba Review

With the fast-growing prevalence of cloud services, the volume of data generated is increasing. This, in turn, is creating expanding demand for large-capacity HDDs for data centers. What are technologies that realized the large capacity HDD of 16 Tbytes using CMR?

* Toshiba Review (Vol.74, No.6, November 2019)

04/2020
Toshiba Group’s Approach to Storage and Semiconductor Technologies for Cyber-Physical Systems
Toshiba Review

The Toshiba Group is offering various solutions aimed at expanding the CPS through the development of hard disk drives (HDDs) that can hold large volumes of valuable data, as well as semiconductor products that can not only process these data but also control edge devices based on the processing results.

* Toshiba Review (Vol.74, No.6, November 2019)

04/2020
High capacity 16TB HDD CMR HDD with two-dimensional magnetic recording (TDMR)
White Papers

The growth and prevalence of cloud services has set the stage for the increasing dissemination of different types of storage services for different types of data storage needs. We has realized high capacity CMR HDD by using TDMR technology.

03/2020
World’s first 14TB nearline HDD with Conventional Magnetic Recording
White Papers

With the prevalence of IoT, big-data, cloud, and other IT services, the volume of data generated is increasing exponentially. We has developed fitting nine platters into the 3.5-inch HDD using helium-sealed design and high-density assembly design.

03/2020
Brushless DC Motor Control Technology to Realize Efficient Driving of Cooling Fans
Toshiba Review

To reduce the power consumption of data centers, it has indispensable to improve the drive efficiency of fan motors. What is motor control technology to realize high-efficiency drive of cooling fans and reducing the board space necessary for motor rotation control?

*Toshiba Review (Vol.74, No.6, November 2019)

03/2020
Low Power Consumption Deep Convolutional Neural Network Accelerator for ADAS
Toshiba Review

In advanced driver assistance systems (ADAS), Attention has been increasingly focused on recognition and classification technologies applying deep convolutional neural networks (DCNNs). What is a hardware accelerator (HWA) for automotive applications that efficiently implement DCNN processing?

*Toshiba Review (Vol.74, No.5, September 2019)

03/2020
Implementation of security features in storage products
Report

What are information security requirements for storage products? We introduce our self-encrypting drives (SEDs).

* Toshiba Group’s Cyber Security Report 2019

02/2020
Investigation of TCAD Calibration for Saturation and Tail Current of 6.5kV IGBTs
Conference Paper

T. Suwa et al., “Investigation of TCAD Calibration for Saturation and Tail Current of 6.5kV IGBTs”, 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 2019, pp. 101-104. Doi: 10.1109/SISPAD.2019.8870514 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore

(https://ieeexplore.ieee.org/document/8870514)

02/2020
Reliability and Analysis Technologies to Improve Quality of Automotive Semiconductor Products
Toshiba Review

The high quality level is required resulting from the advancement of technologies for automotive electronics and electroactuation. What are the technologies and efforts to achieve zero defects ?

*Toshiba Review (Vol.73, No.6, November 2018)

12/2019
Front-Loading of EMC and Thermal Design Technologies to Improve Reliability of Automotive Semiconductor Products
Toshiba Review

What are the front-loading of electro magnetic compatibility (EMC) and thermal design technologies for analog IC and power MOSFET to improve reliability of electronic control unit (ECUs) and shorten development periods in line?

*Toshiba Review (Vol.73, No.6, November 2018)

12/2019
Semiconductor Device Technologies for Battery Monitoring Systems of Eco-Friendly Automobiles
Toshiba Review

In the automobile industry, strengthening of environmental regulations has led to the accelerated development of eco-friendly automobiles. Toshiba Electronic Devices & Storage Corporation has been developing various automotive semiconductor devices that are contributing to the enhancement of battery monitoring system.

*Toshiba Review (Vol.73, No.6, November 2018)

11/2019
Automotive Semiconductor Technologies Contributing to Downsizing of Electric Power Steering Systems
Toshiba Review

What is our power MOSFET that supports the electric power steering system (EPS) which advances with the promotion of ADAS and automated driving ?

*Toshiba Review (Vol.73, No.6, November 2018)

11/2019
TMPM4K Motor Control Microcontroller for High-Performance PMSM Drive Systems at Lower Cost
Toshiba Review

The TMPM4K is expected to offer high performance due to increased processing speed while reducing costs because of the smaller number of parts required.

*Toshiba Review (Vol.74, No.1, January 2019)

08/2019
100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance
Conference Paper

K. Kobayashi et al., "100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 99-102. doi: 10.1109/ISPSD.2019.8757615 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757615)

08/2019
Alpha-Particle Shielding Effect of Thick Copper Plating Film on Power MOSFETs
Conference Paper

T. Nishiwaki et al., "Alpha-Particle Shielding Effect of Thick Copper Plating Film on Power MOSFETs," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 91-94. doi: 10.1109/ISPSD.2019.8757695 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757695)

08/2019
Cu Double Side Plating Technology for High Performance and Reliable Si Power Devices
Conference Paper

H. Kobayashi et al., "Cu Double Side Plating Technology for High Performance and Reliable Si Power Devices," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 515-518. doi: 10.1109/ISPSD.2019.8757691 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757691)

08/2019
IoT Edge Platform Trillion-Node Engine Project
R&D/ Technical Report

Leaves having various functions were developed in this project commissioned by the New Energy and Industrial Technology Development Organization (NEDO), and the practicality and reliability of the platform have been verified.

07/2019
Inter-Frame Smart-Accumulation Technique for Long-Range and High-Pixel Resolution LiDAR
Conference Paper

K. Tanabe, H. Kubota, A. Sai and N. Matsumoto, "Inter-Frame Smart-Accumulation Technique for Long-Range and High-Pixel Resolution LiDAR," 2019 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS), Yokohama, Japan, 2019, pp. 1-3. doi: 10.1109/CoolChips.2019.8721340 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any coyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8721340)

07/2019
Design Method and Mechanism Study of LDMOS to Conquer Stress Induced Degradation of Leakage Current and HTRB Reliability
Conference Paper

K. Komatsu et al., "Design Method and Mechanism Study of LDMOS to Conquer Stress Induced Degradation of Leakage Current and HTRB Reliability," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 363-366. doi: 10.1109/ISPSD.2019.8757670 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757670)

07/2019
High Accurate IGBT/IEGT Compact Modeling for Prediction of Power Efficiency and EMI Noise
Conference Paper

T. Mizoguchi, Y. Sakiyama, N. Tsukamoto and W. Saito, "High Accurate IGBT/IEGT Compact Modeling for Prediction of Power Efficiency and EMI Noise," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 307-310 doi: 10.1109/ISPSD.2019.8757656 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757656)

07/2019
Technologies for Semiconductor Relay Power Devices Allowing Reductions in Size and Weight of In-Vehicle Equipment
Toshiba Review

In line with this trend in the development of semiconductor relays, Toshiba Electronic Devices & Storage Corporation has developed and released products including power metal-oxide-semiconductor field-effect transistors (MOSFETs) and controller integrated circuits (ICs) to control the gate on/o_ state of power MOSFETs for automotive.
*Toshiba Review (Vol.73, No.6 November 2018)

07/2019
Connection Structure Using Rubber Connectors in the IoT Edge Platform, Trillion Node Engine
Conference Paper

K. Agawa, R. Ninomiya, M. Takizawa, T. Mori and T. Sakurai, "Connection Structure Using Rubber Connectors in the IoT Edge Platform, Trillion Node Engine," 2018 IEEE CPMT Symposium Japan (ICSJ), Kyoto, 2018, pp. 55-58. doi: 10.1109/ICSJ.2018.8602895 Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any coyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8602895)

05/2019
Technologies to Reduce Power Consumption of Wireless Communication ICs and Audio Power Amplifiers for Automotive Use
Toshiba Review

Accompanying the expanding dissemination of eco-friendly automobiles, demand has been increasing for reduction of the power consumption of automotive semiconductor devices.Our Bluetooth LE IC and power amplifier facilitate reduction of the size of in-vehicle electronic systems.
*Toshiba Review (Vol.73, No.6, November 2018)

05/2019
Technologies for Motor Driver ICs with Controller to Downsize In-vehicle Motor Systems
Toshiba Review

Toshiba is engaged in the development of motor driver IC products for automotive use, which achieve a balance between high-density mounting and reduction of package size in order to realize compact size in-vehicle motor systems
*Toshiba Review (Vol.73, No.6, November 2018)

05/2019
Sensing Technologies to Support Safe Automated Driving Systems
Toshiba Review

Innovations in automotive sensing technologies to support safe driving have been advancing as a result of the practical realization of ADAS. Toshiba is working the development of deep neural network-intellectual property (DNN-IP)、as well as improving conventional recognition technologies for Visconti™
*Toshiba Review (Vol.73, No.6, November 2018)
* Visconti™ is a trademark of Toshiba Electronic Devices & Storage Corporation

05/2019
A 20.5TOPS and 217.3GOPS/mm2 Multicore SoC with DNN Accelerator and Image Signal Processor Complying with ISO26262 for Automotive Applications
Conference Paper

Y. Yamada et al., "7.2 A 20.5TOPS and 217.3GOPS/mm2 Multicore SoC with DNN Accelerator and Image Signal Processor Complying with ISO26262 for Automotive Applications," 2019 IEEE International Solid- State Circuits Conference - (ISSCC), San Francisco, CA, USA, 2019, pp. 132-134. doi: 10.1109/ISSCC.2019.8662459Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any coyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8662459)

03/2019
Low noise superjunction MOSFET with integrated snubber structure
Conference Paper

H. Yamashita et al., "Low noise superjunction MOSFET with integrated snubber structure," 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, 2018, pp. 32-35. doi: 10.1109/ISPSD.2018.8393595Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8393595)

02/2019
CASE Trends for Next-Generation Vehicles and Toshiba’s Approach to Automotive Semiconductor Devices
Toshiba Review

Toshiba is promoting the development of a wide variety of advanced automotive semiconductor devices and contributing to the advancement of CASE (Connected, Autonomous, Shared, Electric) technologies.
*Toshiba Review (Vol.73, No.6, November 2018)

02/2019
Evaluation methodology for current collapse phenomenon of GaN HEMTs
Conference Paper

T. Sugiyama et al., "Evaluation methodology for current collapse phenomenon of GaN HEMTs," 2018 IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, 2018, pp. 3B.4-1-3B.4-5. doi: 10.1109/IRPS.2018.8353559Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any coyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8353559)

01/2019
Breakthrough of Drain Current Capability and On-Resistance Limits by Gate-Connected Superjunction MOSFET
Conference Paper

W. Saito, "Breakthrough of drain current capability and on-resistance limits by gate-connected superjunction MOSFET," 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, 2018, pp. 36-39. doi: 10.1109/ISPSD.2018.8393596Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8393596)

11/2018
Toshiba EMC Testing Laboratory Receives ISO/IEC 17025 Certification
R&D/ Technical Report

Recently the importance of EMC (Electromagnetic Compatibility) testing is increasing against the backdrop of ECE R10 legislation. Toshiba EMC testing laboratories have received ISO / IEC 17025 certification.

11/2018
A 20ch TDC/ADC hybrid SoC for 240×96-pixel 10%-reflection <0.125%-precision 200m-range imaging LiDAR with smart accumulation technique
Conference Paper

K. Yoshioka et al., "A 20ch TDC/ADC hybrid SoC for 240×96-pixel 10%-reflection <0.125%-precision 200m-range imaging LiDAR with smart accumulation technique," 2018 IEEE International Solid - State Circuits Conference - (ISSCC), San Francisco, CA, 2018, pp. 92-94. doi: 10.1109/ISSCC.2018.8310199Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8310199)

09/2018
Data Selection and De-noising Based on Reliability for Long-Range and High-Pixel Resolution LiDAR
Conference Paper

K. Tanabe, H. Kubota, A. Sai and N. Matsumoto, "Data selection and de-noising based on reliability for long-range and high-pixel resolution LiDAR," 2018 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS), Yokohama, 2018, pp. 1-3. doi: 10.1109/CoolChips.2018.8373079 Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8373079)

09/2018
SIMO DC-DC Converter with High Efficiency over Wide Load Range for IoT Devices
Toshiba Review

Toshiba has been developing a SIMO DC-DC converter equipped with a maximum-on-time (MOT) control technology, and a channel-consolidated multiple-switching (CCMS) control technology for IoT devices.
*Toshiba Review (Vol.72, No.5, November 2017)

07/2018
PMMCD Series ICs with Motor Control and Power Management Functions
Toshiba Review

In response to a need for a power management function, our PMMCD series ICs are expected to contribute to solution realizing a more compact footprint and cost savings by reducing the size and number of peripheral parts.
*Toshiba Review (Vol.72, No.5, November 2017)

07/2018
Power Management IC for cSSDs Realizing Space Saving and Low Power Consumption
Toshiba Review

Toshiba developed the TC7738WBG power management IC for cSSD which achieves a reduction in power consumption and package size through the use of Wafer-level chip scale package (WCSP).
*Toshiba Review (Vol.72, No.5, November 2017)

06/2018
Evolution of Wide-Band gap Semiconductors for Power Devices Expanding Fields of Application
Toshiba Review

Toshiba has been releasing a wide variety of SiC power devices, and are also developing GaN power devices capable of performing high-speed switching operations, including a quasi-normally-off GaN HEMT and GaN MOSFET.
*Toshiba Review (Vol.72, No.5, November 2017)

06/2018
PPI Switching Devices for HVDC Systems
Toshiba Review

For power transmission and distribution applications, Toshiba has developed and released a line of injection enhanced gate transistors (IEGTs) known as press-pack IEGTs (PPIs) as switching devices for HVDC systems.
*Toshiba Review (Vol.72, No.5, November 2017)

 

06/2018
LDO Regulator ICs Enhancing Sophistication of Mobile Devices
Toshiba Review

Smartphones have become an indispensable part of daily life. To enhance the functionality of mobile devices, Toshiba is promoting the development of LDO regulator ICs, featuring superior power supply ripple rejection characteristics, load transient response and low power consumption.
*Toshiba Review (Vol.72, No.5, November 2017)

04/2018
Trends in and Future Outlook for Semiconductor Devices with Enhanced Energy Efficiency
Toshiba Review

To conserve energy while meeting the increasing demand for electricity, Toshiba is promoting the development of various ICs and power devices, ranging from mobile, automotive, and other industrial applications to electric energy conversion equipment.
*Toshiba Review (Vol.72, No.5, November 2017)

 

03/2018

Content of research and development page

Message from the head of the technology division
Message from the Chief Technology Executive
Electronic Devices & Storage Research & Development Center
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Introducing our semiconductor and storage technologies
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Introducing our presentations at international conferences and awards

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