学会発表＆表彰

原則、発表時点で当社グループもしくは当社グループ従業員が、筆頭の学会発表、論文、表彰を紹介します。

学会発表

2024年

・730-790mA/mm2 48V-to-1V Integrated Hybrid DC-DC Converters based on a Star-Delta Switching Network with 5x/8x Duty Expansion
Chen Kong Teh, et al.
2024 IEEE Symposium on VLSI Technology & Circuits, 20 Jun. 2024

・Improved Reliability of a 2200 V SiC MOSFET Module with an Epoxy Encapsulated Insulated Metal Substrate
Hiroshi Kono, et al.
2024 Power Conversion and Intelligent Motion (PCIM) Europe, 12 Jun. 2024

・Paralleling 3.3-kV/800-A rated SiC-MOSFET Modules – An Optimization Method
Hiroyuki Irifune, et al.
2024 Power Conversion and Intelligent Motion (PCIM) Europe, 12 Jun. 2024

・Demonstration of Pseudo Independent Driving of Buried Gate in Trench Field Plate MOSFETs
Tatsuya Nishiwaki, et al.
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 5 Jun. 2024

・Novel Approach to Mitigate Parasitic Oscillation of Power Modules with Parallel Connected SiC-MOSFETs
Shun Takeda, et al.
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 6 Jun. 2024

・Impact of Reverse Current Spreading on Diode Conduction Reliability of SBD-Embedded SiC-MOSFET with Deep p-Shield Structure
Shunsuke Asaba, et al.
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 3 Jun. 2024

・Improving the Short-Circuit Capability of RC-IEGT by Backside Double P-Ring Structure
Ryohei Gejo, et al.
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 3 Jun. 2024

・Packaging Technology Trends for High Power Semiconductor Power Module with Ceramic Substrate
Fumiyoshi Kawashiro
Smart Additive Manufacturing, Design & Evaluation (Smart MADE) 2024, 11 Apr. 2024

2023年

・Detail Analysis of defects on GaN-on-Si Epitaxial Wafers related to the High Voltage GaN Power Devices
Yasuhiro Isobe, et al.
The 14th International Conference on Nitride Semiconductors (ICNS-14), 16 Nov. 2023

・Investigation of Problems with Current Filament Simulation Model for Two-dimensional Multi-cell Structure in IGBTs
Takeshi Suwa
2023 International Conference on Solid State Devices and Materials (SSDM),7 Sep. 2023

・Performance and reliability improvement in Silicon carbide power devices
Hiroshi Kono
2023 Wide Bandgap Power Devices and Applications (WiPDA) in Asia, 29 Aug. 2023

・High Performance Dual Field Plate Trench MOSFETs for Middle-Voltage Applications
Shuhei Tokuyama, et al.
2023 35rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 29 May 2023

・Measuring of parasitic resistance of stacked chip of Si power device
Tatsuya Ohguro, et al.
2023 35th International Conference on Microelectronic Test Structures (ICMTS), 28 May 2023

・New Extraction Method for Intrinsic Qrr of Power MOSFETs
T. Hara, et al.
2023 35th International Conference on Microelectronic Test Structures (ICMTS), 28 May 2023

・On-Resistance Measurements of Low Voltage MOS-FET at wafer level
Kohei Oasa, et al.
2023 35th International Conference on Microelectronic Test Structures (ICMTS), 28 May 2023

・A Novel 2200 V Schottky Barrier Diode-Embedded SiC MOSFET Module
Takahiro Ogata, et al.
2023 Power Conversion and Intelligent Motion (PCIM) Europe, 11 May 2023

・Current Adjustable Gate Drive IC with Propagation Delay Reduction Technique for High-Speed Power Transistors
Hideaki Majima, et al.
2023 Power Conversion and Intelligent Motion (PCIM) Europe, 11 May 2023

・Thermal Impact of Solder Voids under Chip of Power Semiconductors
T. Tabakoya, et al.
2023 International Conference on Electronics Packaging (ICEP), 20 Apr. 2023

2022年

・Advanced Process Control Model for Trench Shape of Power Devices 
Takumi Ito
2022 International Symposium on Semiconductor Manufacturing (ISSM),13 Dec. 2022

・Design guidelines for SBD integration into SiC-MOSFET breaking Ron A - diode conduction capability trade-off
S. Asaba, et al.
2022 International Electron Devices Meeting (IEDM),5 Dec.2022

・Poly Back Seal Effect on Platinum Solid Phase Diffusion in High Speed Switching Diodes
Yuhki Fujino
2022 International Conference on Solid State Devices and Materials (SSDM),29 Sep. 2022

・4.5 kV Double-gate RC-IEGT with Hole Control Gate
Ryohei Gejo, et al.
2022 34rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 24 May 2021

・Introduction of Highly Reliable Versatile Analog　Platform with Embedded NVM for Automotive　Applications
Kanako Komatsu, et al.
2022 34rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 23 May 2021

・650-V and 1200-V SiC MOSFETs with Low RonA and Strong Reduction in Switching Losses
Masaru Furukawa, et al.
PCIM Europe Conference 2022, 12 May 2022

・Improving the VF-IR Trade-Off in 650-V/1200-V SiC SBD by Develop ment of Schottky Metal and Optimi zation of Device Structure
Kei Tanihira, et al.
PCIM Europe Conference 2022, 11 May 2022

2021年

・An Approach to Create Trench Depth Prediction Model
Xueting Wang, et al.
AEC/APC Symposium Asia, 4 Nov. 2021

・2D-TCAD Simulation Study of Capture Layer and Repellent Layer of Current Filament in Trench-Gate IGBTs
Takeshi Suwa
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 27 Sep. 2021

・A 17MHz Wide-band Isolated Current Sensor for D-mode GaN Half-bridge
Hideaki Majima, et al.
2021 International Conference on Solid State Devices and Materials (SSDM), 8 Sep. 2021

・Gate Drive Techniques of Gate-Connected Trench Field Plate Power MOSFETs to Reduce Both Switching and Conduction Losses
Tatsuya Nishiwaki, et al.
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 3 Jun. 2021

・Stacked Chip of Si Power Device with Double Side Cu Plating for Low on-Resistance
Tatsuya Ohguro, et al.
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 3 Jun. 2021

・Drift Layer Design Utilizing Intermediate Boron Ion-Implantation for 100-V-Class Two-step-Oxide Field-Plate Trench MOSFET to Improve Switching Loss
Kenya Kobayashi, et al.
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 3 Jun. 2021

・Novel Connector Mechanism Using Anisotropic Conductive Rubber for Trillion-Node Engine as an IoT Edge Platform
Kenichi Agawa, et al.
2021 IEEE 71st Electronic Components and Technology Conference (ECTC), 1 Jun. 2021

・Improving the Specific on-Resistance and short-Circuit Ruggedness tradeoff of 1.2-kV-Class SBD-Embedded SiC MOSFETs Through Cell Pitch Reduction and Internal Resistance
Hiroshi Kono, et al.
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 31 May 2021

・Study of Unique ESD Tolerance Dependence on Backgate Ratio for RESURF LDMOS with Rated Voltage Variation
Kanako Komatsu, et al.
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 31 May 2021

・High Performance and Reliable Si Power Devices with double side Cu plate
Tatsuya Ohguro, et al.
5th International Electric Vehicle Technology Conference (EVTeC), 26 May 2021

・MCU and Motor Driver Leaf Modules of Coin-Sized PCBs in an Open-Innovation IoT/CPS Platform
Kenichi Agawa, et al.
2021 International Conference on Electronics Packaging (ICEP 2021), 12 May 2021

・3.3kV All SiC MOSFET Module with Schottky Barrier Diode Embedded SiC MOSFET
Hiroshi Kono, et al.
PCIM Europe Conference 2021, 5 May 2021

2020年

・Process Optimization of Trench Field Plate Power MOSFETs with Sequential Phosphorus-Doped Silicon
Kota Tomita, et al.
2020 International Symposium on Semiconductor Manufacturing (ISSM), 15 Dec. 2020

・Quality Control of Trench Field Plate Power MOSFETs by Correlation of Trench Angle and Wafer Warpage
Hiroaki Kato, et al.
2020 International Symposium on Semiconductor Manufacturing (ISSM), 15 Dec. 2020

・Analysis of Dependence of dVCE/dt on Turn-off Characteristics with a 1200 V Double-gate IGBT
Yoko Iwakaji, et al.
2020 International Conference on Solid State Devices and Materials (SSDM), 30 Sep. 2020

・Analysis of Recovery Oscillation Inhibition for Cathode Design of a 1200 V Silicon Diode Using an LCR Circuit Model
Kaori Fuse, et al.
2020 International Conference on Solid State Devices and Materials (SSDM), 30 Sep. 2020

・3D Packaging and Integration Technology using Photosensitive Mold
Kentaro Mori, et al.
2020 International Conference on Solid State Devices and Materials (SSDM), 28 Sep. 2020

・Investigation of the relationship between current filament movement and local heat generation in IGBTs by using modified avalanche model of TCAD
Takeshi Suwa
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 28 Sep. 2020

・Investigating the Highly Tolerant LDMOS Cell Array Design Against the Negative Carrier Injection and the ESD Events
Kanako Komatsu, et la.
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 17 Sep. 2020

・Investigation of the Breakdown Voltage Degradation Under Hot-Carrier Injection in STI-Based PchLDMOS Transistors
Hirotaka Kasai, et al.
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 17 Sep. 2020

・High Accurate Representation of Turn-on Switching Characteristics by New IGBT and FWD Compact Models for High Power Applications
Takeshi Mizoguchi, et al.
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 17 Sep. 2020

・Improvement of Cosmic Ray Robustness in IGBT with Deep-N Layer
Daiki Yoshikawa, et al.
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 17 Sep. 2020

・Stable Cascode GaN HEMT Operation by Direct Gate Drive
Toru Sugiyama, et al.
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 15 Sep. 2020

・Extended Concept of MAMR and Its Performance and Reliability
Akihiko Takeo
The 31st Magnetic Recording Conference (TMRC 2020), 18 Aug. 2020

・Improved Reliability of 1.2kV SiC MOSFET by Preventing the Intrinsic Body Diode Operation
Masaru Furukawa, et al.
PCIM Europe Conference 2020, 7 Jul. 2020

・Sub-GHz Ranging System;Implementation and Evaluation
Masayoshi Oshiro, et al.
2020 IEEE 91st Vehicular Technology Conference (VTC2020-Spring), 25 May 2020

2019年

・Process Control Technique to Dramatically Reduce Voids in Phosphorus-Doped Poly-Silicon for Trench Field-Plate MOSFETs 
Saya Shimomura, et al.
2019 Joint International Symposium on e-Manufacturing & Design Collaboration(eMDC) & Semiconductor Manufacturing (ISSM), 6 Sept. 2019 

・Novel Manufacturing Process for Si Superjunction Power MOSFETs with Air-Gap and Insulating Cap Layer
Yuhki Fujino, et al.
2019 Joint International Symposium on e-Manufacturing & Design Collaboration(eMDC) & Semiconductor Manufacturing (ISSM), 6 Sept. 2019 

・Investigation of TCAD Calibration for Saturation and Tail Current of 6.5kV IGBTs
Takeshi Suwa, et al.
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 4 Sept. 2019 

・Analysis of Oscillatory Phenomena in Cathode Designs for 1200 V Diodes Using an LCR Circuit Model in Reverse Recovery
Kaori Fuse, et al.
2019 International Conference on Solid State Devices and Materials (SSDM), 4 Sept. 2019 

・3D Fan-Out Package Technology with Photosensitive Through Mold Interconnects
Kentaro Mori, et al.
2019 IEEE 69th Electronic Components and Technology Conference (ECTC), 31 May 2019 

・Cu Double Side Plating Technology for High Performance and Reliable Si Power Devices
Hitoshi Kobayashi, et al.
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 23 May 2019 

・Design Method and Mechanism Study of LDMOS to Conquer Stress Induced Degradation of Leakage Current and HTRB Reliability
Kanako Komatsu, et al.
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 22 May 2019 

・High Accurate IGBT/IEGT Compact Modeling for Prediction of Power Efficiency and EMI Noise
Takeshi Mizoguchi, et al.
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 22 May 2019 

・Breakthrough in Channel Mobility Limit of Nitrided Gate Insulator for SiC DMOSFET with Novel High-temperature N2 Annealing
Shunsuke Asaba, et al.
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 21 May 2019 

・100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance
Kenya Kobayashi, et al.
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 21 May 2019 

・Alpha-Particle Shielding Effect of Thick Copper Plating Film on Power MOSFETs
Tatsuya Nishiwaki, et al.
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 21 May 2019 

・Inter-Frame Smart-Accumulation Technique for Long-Range and High-Pixel Resolution LiDAR
Ken Tanabe, et al.
2019 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS), 19 April 2019 

・A 20.5TOPS and 217.3GOPS/mm2 Multicore SoC with DNN Accelerator and Image Signal Processor Complying with ISO26262 for Automotive Applications
Yutaka Yamada, et al.
2019 IEEE International Solid- State Circuits Conference - (ISSCC), 19 Feb. 2019

2018年

・The electrical effect on Schottky barrier diodes of emitted hydrogen from dielectric films
Tatsuya Shiraishi,
2018 International Symposium on Semiconductor Manufacturing (ISSM), 11 Dec. 2018

・Predictive process control for change in chemical dry etching equipment condition
Miyuki Maruta, et al.
2018 International Symposium on Semiconductor Manufacturing (ISSM), 11 Dec. 2018

・Process Control Technique to Reduce Wafer Warpage for Trench Field Plate Power MOSFET
Hiroaki Kato, et al.
2018 International Symposium on Semiconductor Manufacturing (ISSM), 11 Dec. 2018

・Connection Structure Using Rubber Connectors in the IoT Edge Platform, Trillion Node Engine
Kenichi Agawa, et al.
2018 IEEE CPMT Symposium Japan (ICSJ), 19, Nov. 2018 

・An 113DB-Link-Budget Bluetooth-5 SoC with an 8dBm 22%-Efficiency TX
T. Wang, et al.
2018 IEEE Symposium on VLSI Circuits, 19 June 2018

・Hot-carrier induced off-state leakage current increase of LDMOS and approach to overcome the phenomenon
Keita Takahashi, et al.
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 16 May 2018

・Low noise superjunction MOSFET with integrated snubber structure
Hiroaki Yamashita, et al.
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 14 May 2018

・Breakthrough of drain current capability and on-resistance limits by gate-connected superjunction MOSFET
Wataru Saito,
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 14 May 2018

・Data selection and de-noising based on reliability for long-range and high-pixel resolution LiDAR
Ken Tanabe, et al.
2018 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS), 20 April 2018

・Evaluation methodology for current collapse phenomenon of GaN HEMTs
Toru Sugiyama, et al.
2018 IEEE International Reliability Physics Symposium (IRPS), 13 March 2018

2017年

・New Characterization Technique for Detection of Atomic-sized Crystalline Defects and Strain Using Moiré Method
Masako Kodera, et al.
2017 International Conference on Solid State Devices and Materials (SSDM), 22 Sep. 2017

・Hot-carrier Induced Drastic Off-state Leakage Current Degradation in STI-based N-channel LDMOS
Keita Takahashi, et al.
2017 International Conference on Solid State Devices and Materials (SSDM), 21 Sep. 2017

・Modeling of time dependent breakdown voltage degradation in Trench Field Plate Power MOSFET
Tatsuya Nishiwaki, et al.
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 1 June 2017

・HBM robustness optimization of fully isolated Nch-LDMOS for negative input voltage using unique index parameter
Fumio Takeuchi, et al.
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 1 June 2017

・Process design of superjunction MOSFETs for high drain current capability and low on-resistance
Wataru Saito,
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 1 June 2017

・High aspect ratio deep trench termination (HARDT2) technique surrounding die edge as dielectric wall to improve high voltage device area efficiency
Takuya Yamaguchi, et al.
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 1 June 2017

・Direct photo emission monitoring for analysis of IGBT destruction mechanism using streak camera
Tomoko Matsudai, et al.
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 30 May 2017

・Relation between UIS Withstanding Capability and Gate Leakage Currents for High Voltage GaN-HEMTs
Toshiyuki Naka, et al.
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 30 May 2017

表彰受賞

2023年

・国際電気標準会議（IEC）
IEC1906賞
東芝デバイス＆ストレージ（株）　冨島敦史
詳しくはこちら

・経済産業省
令和５年度産業標準化事業表彰　経済産業大臣表彰
東芝デバイス＆ストレージ（株）　福場 義憲
詳しくはこちら

・公益社団法人 発明協会
令和5年度関東地方発明表彰　発明奨励賞
磁束制御型FC-MAMR磁気記録ヘッド（特許第7011768号）
東芝デバイス&ストレージ（株）　竹尾 昭彦
研究開発センターと共同受賞

・石川県
第13回 いしかわエコデザイン賞2023　パブリシティ賞
加賀東芝エレクトロニクス（株）
詳しくはこちら

2022年

・一般財団法人 省エネルギーセンター
2022年度（令和4年度）省エネ大賞　省エネルギーセンター会長賞
（株）ジャパンセミコンダクター
詳しくはこちら

・一般社団法人日本能率協会
2023年（第11回）GOOD FACTORY賞®
豊前東芝エレクトロニクス（株）
詳しくはこちら

・AspenCore
2022 World Electronics Achievement Awards (WEAA)
東芝電子部品(上海)有限公司
詳しくはこちら

2021年

・環境省
令和3年度地域環境美化功績者表彰環境大臣賞
（株）ジャパンセミコンダクター
詳しくはこちら

・フィリピン経済特区庁
Billionaire’s Award for the PEZA Excellence Awards
東芝情報機器フィリピン社
詳しくはこちら

2020年

・環境省
令和２年度循環型社会形成推進功労者環境大臣表彰
（株）ジャパンセミコンダクター
詳しくはこちら

・国際電気標準会議（IEC）
IEC1906賞
東芝デバイス&ストレージ（株）福場義憲
詳しくはこちら

2019年

・The Institute of Electrical and Electronics Engineers (IEEE) Reliability Society Japan Joint Chapter
信頼性技術功績賞
「LSI信頼性認定ガイドラインの国際標準化に関する功績」
東芝デバイス&ストレージ(株)　瀬戸屋 孝

・MIPI® Alliance
2018 MIPI Membership Award
MIPI Lifetime Achievement Award
Toshiba Electronics Europe GmbH　Ariel LASRY
詳しくはこちら

・公益財団法人 市村清新技術開発財団
第51回市村産業賞 貢献賞
「液体ヘリウムを使用しない冷凍機冷却超電導磁石の開発と実用化」
東芝マテリアル(株)　八木 典章
東芝エネルギーシステムズ(株)と共同受賞
詳しくはこちら

・環境省
環境 人づくり企業大賞2018 大賞（環境大臣賞）
(株)ジャパンセミコンダクター
詳しくはこちら

・環境省
環境 人づくり企業大賞2018 奨励賞

東芝デバイス&ストレージ(株)　姫路半導体工場
詳しくはこちら

・国連生物多様性の10年日本委員会（UNDB-J）
生物多様性アクション大賞2019
「全国の半導体製造拠点で行う地域密着型活動」
東芝デバイス&ストレージ(株)

・国立研究開発法人 新エネルギー・産業技術総合開発機構
優良事業表彰
「省エネルギー素子用大口径Si基板上高品質GaN成膜技術の開発」
東芝デバイス&ストレージ(株)　須黒 恭一，宮下 直人

・一般社団法人 日本科学技術連盟
第49回 信頼性・保全性シンポジウム 優秀報文賞
「TRE（時間分解エミッション）を用いたIGBT（絶縁ゲートバイポーラトランジスタ）アバランシェ降伏時における電流集中現象の観測」
東芝デバイス&ストレージ(株)　遠藤 幸一，瀬戸屋 孝，長峰 真嗣
大阪大学と共同受賞

・公益社団法人 発明協会
令和元年度関東地方発明表彰 発明協会東京優秀賞
「画像パターン認識用特徴量計算装置（特許第5095790号）」
東芝デバイス&ストレージ(株)　西山 学
(株)東芝、キオクシア(株)と共同受賞
詳しくはこちら

2018年

・環境省
環境 人づくり企業大賞2017優秀賞
(株)ジャパンセミコンダクター
詳しくはこちら

・環境省
環境 人づくり企業大賞2017 奨励賞
東芝デバイス&ストレージ(株)　姫路半導体工場
詳しくはこちら

・公益財団法人 電気科学技術奨励会
第 66 回電気科学技術奨励賞
「産業，交通向けを主とした新規パワーデバイスの創出」
東芝デバイス & ストレージ(株)　山口 正一
詳しくはこちら

・公益社団法人 発明協会
平成 30 年度関東地方発明表彰　発明奨励賞
「低損失高信頼性 SiC パワー整流素子（ 特許第 5175872 号 ）」
東芝デバイス＆ストレージ(株)　水上 誠
(株)東芝と共同受賞

・(株)日本経済新聞社
第 45 回日経産業新聞広告賞大賞
事業広告 “The Power of Device & Storage.”
東芝デバイス＆ストレージ(株)

詳しくはこちら

2017年

・MIPI® Alliance
2017 MIPI Membership Awards
MIPI Corporate Award
Toshiba Electronic Devices & Storage Corporation
詳しくはこちら

・環境省
環境 人づくり企業大賞2016 奨励賞
(株)ジャパンセミコンダクター

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