PCIM 2018, Nuremberg - Hall 9 - Stand 301 Toshiba releases automotive 40V N-Channel power MOSFETs in 5mm x 6mm package
2nd May 2018
Reduced on-resistance resulting from the use of a new, small, low-resistance package
Toshiba Electronics Europe (“Toshiba”) has released two new MOSFETs housed in the small low-resistance SOP Advance (WF) package in 5mm x 6mm size, as new additions to the automotive 40V N-channel power MOSFET series. The TPHR7904PB and TPH1R104PB are AEC-Q101 qualified and are intended for a variety of automotive applications including Electric Power Steering (EPS), load switches, electric pumps, fans and more.
Fabricated using the latest ninth generation trench U-MOS IX-H process and housed in a small low-resistance package, the new MOSFETs provide on-resistance (RDS(ON)) as low as max 0.79mΩ at VGS=10V, thereby reducing conduction losses. The devices specified with a Drain-Source voltage (VDSS) of 40V and can handle drain currents (ID) up to 150 A DC. The U-MOS IX-H design also lowers switching noise, helping to reduce electromagnetic interference (EMI).
The SOP Advance (WF) package employs a wettable flank terminal structure, which enables automated visual inspection of solder joints on printed circuit boards, a key requirement for automotive quality compliance.
