新一代超結N溝道功率MOSFET“DTMOSVI系列”，有助於提高電源效率

Product News 2020-03

The package photograph of lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z, TK210V65Z.

東芝電子元件及存儲裝置株式會社推出了8款新一代[1]650V超結N溝道功率MOSFET“DTMOSVI系列”產品，其主要應用於資料中心和光伏發電機功率調節器等工業設備的開關電源，這些產品擴大了封裝和導通電阻方面的產品線。分別為: TK110N65Z, TK110Z65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z, TK210V65Z.

新一代DTMOSVI系列與上一代DTMOSIV-H系列相比，降低了“漏極-源極導通電阻x柵極-漏極電荷”（品質因數）約40%，使開關電源的效率提高了約0.36%[2]。

東芝將通過繼續擴大其產品線以滿足市場發展趨勢，從而幫助提高電源效率。

Notes:
[1] As of March 2020, from a survey by Toshiba
[2] As of March 2020, values measured by Toshiba (When TK040N65Z in the new series is compared with TK62N60X in the conventional series by using a PFC circuit with an output power of 2500 W)

產品特點

  • “漏源導通電阻x柵極-漏極電荷”的值—— 降低約40 %[3]以提高開關電源的效率。

Notes:
[3] Comparison with the conventional generation DTMOSIV-H series

應用

工業設備的開關電源

·         資料中心（伺服器電源等）

·         光伏發電機的功率調節器

·         不斷電供應系統系統

產品特點

(@Ta=25 °C)

Part
number		 Package Polarity Absolute
maximum ratings		 Drain-source
On-resistance
RDS(ON)
max
@VGS=10 V
(Ω)		 Total
gate
charge
Qg
typ.
(nC)		 Gate-
drain
charge
Qgd
typ.
(nC)		 Input
capacitance
Ciss
typ.
(pF)		 Conventional
generation
series
part number
(DTMOSIV-H)
Drain-
source
voltage
VDSS
(V)		 Drain
current
(DC)
ID
(A)
TK110N65Z TO-247 N-ch 650 24 0.11 40 11 2250 TK25N60X
TK110Z65Z TO-247-4L 650 24 0.11 40 11 2250 TK25Z60X
TK110A65Z TO-220SIS 650 24 0.11 40 11 2250 TK25A60X
TK125V65Z DFN8x8 650 24 0.125 40 11 2250 TK25V60X
TK155A65Z TO-220SIS 650 18 0.155 29 8 1635 TK20A60W[4]
TK170V65Z DFN8x8 650 18 0.17 29 8 1635 TK20V60W[4]
TK190A65Z TO-220SIS 650 15 0.19 25 7.1 1370 TK16A60W[4]
TK210V65Z DFN8x8 650 15 0.21 25 7.1 1370 TK17V65W[4]

Notes:
[4] DTMOSIV series

Internal Circuits

The illustration of internal circuits of lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z, TK210V65Z.

Application Circuit Examples

The illustration of application circuit examples of lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z, TK210V65Z.

The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

Comparison of Characteristics[1]

The illustration of comparison of characteristics of lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z, TK210V65Z.

Notes:
[5] Average value of measurement data

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

開啟新視窗