Lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z, TK210V65Z
Product News 2020-03
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched eight 650 V new generation[1] super junction N-ch power MOSFET products in the DTMOSVI series: “TK110N65Z”, “TK110Z65Z”, “TK110A65Z”, “TK125V65Z”, “TK155A65Z”, “TK170V65Z”, “TK190A65Z” and “TK210V65Z” for switching power supplies of industrial equipment such as data centers and power conditioners of photovoltaic generators to expand the lineup in terms of packages and On-resistance.
The new generation DTMOSVI series has reduced the values of “drain-source On-resistance x gate-drain charge”—a figure of merit—by about 40 % compared with the previous generation DTMOSIV-H series, allowing the efficiency of switching power supplies to be improved by about 0.36 %[2].
Toshiba will continue expanding its product lineup to meet market trends and help improve the efficiency of power supplies.
Notes:
[1] As of March 2020, from a survey by Toshiba
[2] As of March 2020, values measured by Toshiba (When TK040N65Z in the new series is compared with TK62N60X in the conventional series by using a PFC circuit with an output power of 2500 W)
Features
- The values of “drain-source On-resistance x gate-drain charge” have been reduced by about 40 %[3] to improve the efficiency of switching power supplies.
Notes:
[3] Comparison with the conventional generation DTMOSIV-H series
Applications
Switching power supply for industrial equipment
- Data centers (Server power supplies, etc.)
- Power conditioners for photovoltaic generators
- Uninterruptible power systems
Product Specifications
(@Ta=25 °C)
| Part number |
Package | Polarity | Absolute maximum ratings |
Drain-source On-resistance RDS(ON) max @VGS=10 V (Ω) |
Total gate charge Qg typ. (nC) |
Gate- drain charge Qgd typ. (nC) |
Input capacitance Ciss typ. (pF) |
Conventional generation series part number (DTMOSIV-H) |
|
|---|---|---|---|---|---|---|---|---|---|
| Drain- source voltage VDSS (V) |
Drain current (DC) ID (A) |
||||||||
| TK110N65Z | TO-247 | N-ch | 650 | 24 | 0.11 | 40 | 11 | 2250 | TK25N60X |
| TK110Z65Z | TO-247-4L | 650 | 24 | 0.11 | 40 | 11 | 2250 | TK25Z60X | |
| TK110A65Z | TO-220SIS | 650 | 24 | 0.11 | 40 | 11 | 2250 | TK25A60X | |
| TK125V65Z | DFN8x8 | 650 | 24 | 0.125 | 40 | 11 | 2250 | TK25V60X | |
| TK155A65Z | TO-220SIS | 650 | 18 | 0.155 | 29 | 8 | 1635 | TK20A60W[4] | |
| TK170V65Z | DFN8x8 | 650 | 18 | 0.17 | 29 | 8 | 1635 | TK20V60W[4] | |
| TK190A65Z | TO-220SIS | 650 | 15 | 0.19 | 25 | 7.1 | 1370 | TK16A60W[4] | |
| TK210V65Z | DFN8x8 | 650 | 15 | 0.21 | 25 | 7.1 | 1370 | TK17V65W[4] | |
Notes:
[4] DTMOSIV series
Internal Circuits
Application Circuit Examples
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.
Comparison of Characteristics[1]
Notes:
[5] Average value of measurement data
Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.