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東芝推出100V N通道功率MOSFET有助於降低車用設備功耗

February 25, 2020

Toshiba Electronic Devices & Storage Corporation

- 溝槽結構的新型U-MOS X-H系列為採用東芝最新製程 

XK1R9F10QB

東芝電子元件及儲存裝置株式會社(東芝)推出100V N通道功率金屬氧化物半導體場效應電晶體(MOSFET) - XK1R9F10QB,其適用於汽車的48V設備應用,例如負載開關、開關電源和馬達驅動。出貨即日啟動。

這款新產品是東芝採用溝槽結構的新型U-MOS X-H系列MOSFET中的首款產品,採用該公司的最新[1]一代製程。它採用低電阻TO-220SM(W)封裝,提供業界領先的低導通電阻[2],最大導通電阻為1.92mΩ,與目前的TK160F10N1L相比降低約20%,這有助於降低設備功耗。由於電容特性得到最佳化,還提供更低的開關雜訊,進而減少設備的EMI[3]。 此外,將閾值電壓寬縮小至1V,可以增強並聯時的開關同步性。 

應用

汽車設備(負載開關、開關電源和馬達驅動等)

產品特點

  • 採用溝槽結構的U-MOS X-H系列MOSFET
  • 業界領先的低導通電阻
    VGS=10V時,RDS(ON)=1.92mΩ(最大值)
  • 符合AEC-Q101要求

產品規格

(@Ta=25°C)

Part

Number

Polarity

Absolute maximum ratings

Drain-source

On-resistance

RDS(ON) max

(mΩ)

Channel-

to-case thermal impedance

Zth(ch-c)

max

(℃/W)

Package

Series

Drain-

source

voltage

VDSS

(V)

Drain current

(DC)

ID

(A)

Drain

current

(pulsed)

IDP

(A)

Channel temperature

Tch

(℃)

@VGS

=6V

@VGS

=10V

XK1R9F10QB

N-channel

100

160

480

175

3.31

1.92

0.4

TO-220SM(W)

U-MOS X-H

Notes:

[1] 截至2020年2月25日
[2] 與具有相同VDSS最大額定值和封裝等級的產品進行比較;根據東芝調查,截至2020年2月25日。
[3] EMI(電磁干擾)

更多此產品資訊

XK1R9F10QB

更多東芝車用MOSFET產品訊息

Automotive MOSFETs

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Customer Inquiries:

Power Device Sales & Marketing Department

Tel: +81-3-3457-3933

Contact

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台灣地區

台灣東芝電子零組件股份有限公司

TEL: +886-(0)2-25089988

Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

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