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東芝推出80V N溝道功率MOSFET採用最新一代製程,可提高電源效率

 March 30, 2020

Toshiba Electronic Devices & Storage Corporation

 - 擴大U-MOS X-H功率MOSFET系列產品陣容 -

TPH2R408QM,TPN19008QM.jpg

東芝電子元件及儲存裝置株式會社(東芝)推出80V N溝道功率MOSFET為採用最新一代製程的「U-MOS X-H系列」。 產品適用於資料中心和通訊基地台中所用的工業設備的開關電源。

新產品為兩款封裝,一款為採用表面黏著SOP Advance封裝的TPH2R408QM以及TSON Advance封裝的TPN19008QM。即日起出貨。

由於採用了最新一代製程技術,比當前製程U-MOS VIII-H系列中的80V產品相比,新款80V U-MOS X-H產品的漏源導通電阻降低了大約40%。透過最佳化元件結構,漏源導通電阻與閘極電荷特性[1]之間的平衡也得到了改善[2]。此款IC可提供業界最低功耗[3]。 

應用

  • 開關電源(高效率AC-DC轉換器、DC-DC轉換器等)
  • 馬達控制設備(馬達驅動器等) 

產品特點

  • 業界最低[3]功耗(透過改善導通電阻與閘極電荷特性[2]之間的平衡)
  • 業界最低 [3]導通電阻: 

            RDS(ON)=2.43mΩ (max) @VGS=10V (TPH2R40QM)

            RDS(ON)=19mΩ (max) @VGS=10V (TPN19008QM)

  • 高額定通道溫度: Tch=175℃

產品規格

(Unless otherwise specified, @Ta=25℃)

Part number

TPH2R408QM

TPN19008QM

Absolute

Maximum

ratings

Drain-source voltage  VDSS  (V)

80

80

Drain current (DC)   ID  (A)

@Tc=25℃

120

34

Channel temperature  Tch  (℃)

175

175

Electrical

characteristics

Drain-source On-resistance

RDS(ON) max  (mΩ)

@VGS=10V

2.43

19

@VGS=6V

3.5

28

Total gate charge (gate-source plus gate-drain)

Qg typ.  (nC)

87

16

Gate switch charge  Qsw typ.  (nC)

28

5.5

Output charge  Qoss typ.  (nC)

90

16.5

Input capacitance  Ciss typ.  (pF)

5870

1020

Packages

Name

SOP Advance

TSON Advance

Size typ.  (mm)

5.0×6.0

3.3×3.3

Stock Check & Purchase

注釋:
[1] 總閘極電荷(閘源+閘漏)、閘極開關電荷、輸出電荷
[2] 與TPH4R008NH(U-MOS VIII-H系列)相比,TPH2R408QM的漏源導通電阻x總閘極電荷約提高15%,漏源導通電阻 x 閘極開關電荷約提高10%,漏源導通電阻x輸出電荷約提高31%。
[3] 截至2020年3月30日,東芝調查。

更多新產品資訊

連結至東芝12-300V MOSFET產品陣容

採購/確認線上代理商庫存:

TPH2R408QM

TPN19008QM

 

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Tel: +81-3-3457-3933

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TEL: +886-(0)2-25089988

Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

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