Toshiba’s 80V N-channel Power MOSFETs Fabricated with Latest Generation Process Help Improve Power Supply Efficiency
March 30, 2020
Toshiba Electronic Devices & Storage Corporation
- Expanding line-up of U-MOS X-H power MOSFET series -
TOKYO— Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has added 80V N-channel power MOSFETs to its “U-MOS X-H series” fabricated with the latest generation process. The new MOSFETs are suitable for switching power supplies in industrial equipment used in data centers and communication base stations.
The expanded line-up includes "TPH2R408QM," housed in SOP Advance, a surface-mount type packaging, and "TPN19008QM," housed in a TSON Advance package. Shipments starts today.
Drain-source On-resistance in the new 80V U-MOS X-H products, manufactured with the latest generation process, is approximately 40% lower than that of 80V products in the current generation process U-MOS Ⅷ-H series products. The trade-off between the drain-source On-resistance and the gate charge characteristics[1] has also been improved[2] by optimizing device structure. As a result, the new products feature industry’s lowest[3] power dissipation.
Toshiba is expanding its lineup of products that reduce power dissipation to help cut equipment power consumption.
Applications
- Switching power supplies (High efficiency AC-DC converters, DC-DC converters, etc.)
- Motor control equipment (Motor drive, etc.)
Features
- The industry’s lowest[3] power dissipation (by improving the trade-off between On-resistance and gate charge characteristic[2])
- Industry’s lowest level[3] On-resistance:
RDS(ON)=2.43mΩ (max) ＠VGS=10V (TPH2R40QM)
RDS(ON)=19mΩ (max) ＠VGS=10V (TPN19008QM)
- High channel temperature rating : Tch=175℃
Main Specifications
(Unless otherwise specified, @Ta=25℃)
Part number |
||||
|---|---|---|---|---|
Absolute Maximum ratings |
Drain-source voltage VDSS (V) |
80 |
80 |
|
Drain current (DC) ID (A) |
@Tc=25℃ |
120 |
34 |
|
Channel temperature Tch (℃) |
175 |
175 |
||
Electrical characteristics |
Drain-source On-resistance RDS(ON) max (mΩ) |
@VGS=10V |
2.43 |
19 |
@VGS=6V |
3.5 |
28 |
||
Total gate charge (gate-source plus gate-drain) Qg typ. (nC) |
87 |
16 |
||
Gate switch charge Qsw typ. (nC) |
28 |
5.5 |
||
Output charge Qoss typ. (nC) |
90 |
16.5 |
||
Input capacitance Ciss typ. (pF) |
5870 |
1020 |
||
Packages |
Name |
SOP Advance |
TSON Advance |
|
Size typ. (mm) |
5.0×6.0 |
3.3×3.3 |
||
Stock Check & Purchase |
|
 |
||
Notes:
[1] Total gate charge (gate-source plus gate-drain), gate switch charge, output charge
[2] Compared with TPH4R008NH (U-MOS Ⅷ-H series), TPH2R408QM has improved its drain-source On-resistance x total gate charge by approximately 15%, drain-source On-resistance x gate switch charge by approximately 10%, and drain-source On-resistance x output charge by approximately 31%.
[3] As of March 30, 2020, Toshiba survey.
Follow the links below for more on the new products.
Follow the link below for more on Toshiba 12-300V MOSFET line-up.
To check availability of the new products at online distributors, please visit:
TPH2R408QM
TPN19008QM
*Company names, product names, and service names may be trademarks of their respective companies.
Customer Inquiries:
Power Device Sales & Marketing Department
Tel: +81-3-3457-3933
Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.