Small MOSFETs Bring Lower Power Consumption and Longer Operating Times to Battery-Driven Devices

Product News 2024-10

The package photograph of small MOSFETs bring lower power consumption and longer operating times to battery-driven devices.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched small MOSFETs featuring low gate leakage current and low drain cut-off current for portable equipment and IoT devices such as wearable devices and tablet devices.

The new products have significantly reduced the drain cut-off current to 60nA (max)[1] compared with 1μA (max)[2] of Toshiba existing MOSFET products and guarantee a gate leakage current of 50nA (max) under gate-voltage conditions when the MOSFETs are in the on state (at VGS=5V)[2]. These characteristics are suitable for applications that require to minimize total energy increased by high-density design of semiconductor devices and for battery-powered portable devices. They significantly help energy saving and battery longevity of the equipment.

The new products are 29 types of 6 series: 4 series of 30V and 20V N-channel MOSFETs and 2 series of -20V P-channel MOSFETs. A variety of small surface mount packages are available to meet the diverse needs of our customers.

Notes:
[1] In SSM3K79 series
[2] In SSM3K15A series

Applications

  • Smartphones
  • Wearables (Hearable devices)
  • IoT devices
  • Laptop PCs
  • Tablets, etc.

Features

(SSM3K79 Series)

  • Low drain cut-off current:IDSS = 60nA (max) (VDS=30V)
  • Low gate leakage current:IGSS = 50nA (max) (VGS=±5V)

Main Specifications

(Unless otherwise specified, Ta= 25 °C)

Part number

Polarity Package

Absolute maximum ratings

Electric characteristics

Name

Size
(mm)

Drain-
source
voltage
VDSS
(V)

Gate-
source
voltage
VGSS
(V)

Drain
current
(DC)
ID
(A)

Drain
cut-off
current
IDSS
(nA)

Gate
leakage
current
IGSS
(nA)

Drain-
source on-
resistance
RDS(ON)
(Ω)

VDS=
Max

VGS=
±5V

❘VGS❘=
4V

❘VGS❘=
4.5V

Typ. Max Max Max Max
SSM3K79CTC

N-channel

CST3C 0.8 × 0.6

30

±20

0.1

60 ±50

3.6

-

SSM3K79CT CST3 1.0 × 0.6
SSM3K79MFV VESM 1.2 × 1.2
SSM3K79FS SSM 1.6 × 1.6
SSM3K79FU USM 2.1 × 2.0
SSM6N79FE ES6 1.6 × 1.6
SSM6N79FU US6 2.1 × 2.0
SSM3K78CTC

N-channel

CST3C 0.8 × 0.6

20

±10

0.25

80 ±80

-

1.1

SSM3K78MFV VESM 1.2 × 1.2
SSM3K78FS SSM 1.6 × 1.6
SSM6N78FE ES6 1.6 × 1.6
SSM6N78FU US6 2.1 × 2.0
SSM3K77CT

N-channel

CST3 1.0 × 0.6

20

±10

0.2

80 ±80

-

2.2

SSM3K77MFV VESM 1.2 × 1.2
SSM3K77FS SSM 1.6 × 1.6
SSM6N77FE ES6 1.6 × 1.6
SSM6N77FU US6 2.1 × 2.0
SSM3K76CT

N-channel

CST3 1.0 × 0.6

20

±8

0.8

200 ±200

-

0.235

SSM3K76MFV VESM 1.2 × 1.2
SSM3K76FS SSM 1.6 × 1.6
SSM6N76FE ES6 1.6 × 1.6
SSM3J78CTC

P-channel

CST3C 0.8 × 0.6

-20

±10

-0.25

80 ±80

-

1.4

SSM3J78MFV VESM 1.2 × 1.2
SSM3J78FS SSM 1.6 × 1.6
SSM6P78FE ES6 1.6 × 1.6
SSM6P78FU US6 2.1 × 2.0
SSM3J76CT

P-channel

CST3 1.0 × 0.6

-20

±8

-0.8

80 ±80

-

0.39

SSM3J76MFV VESM 1.2 × 1.2
SSM6P76FE ES6 1.6 × 1.6

Pin Assignments

The illustration of small MOSFETs bring lower power consumption and longer operating times to battery-driven devices.
The illustration of small MOSFETs bring lower power consumption and longer operating times to battery-driven devices.

Application Circuit Examples

The illustration of small MOSFETs bring lower power consumption and longer operating times to battery-driven devices.

Note:
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

* Company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

A new window will open