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This page is listing links of the press release and topics published by Toshiba Electronic Devices and Storage Corporation.
Information in the news and topics, including product prices and specifications, content of services and contact information, is current on the date of the news announcement, but is subject to change without prior notice. The news before March 31, 2017 is the news published by Toshiba Storage & Electronic Devices Solutions Company.

Release Year
Category
Press Release Number
21-03-2024
Toshiba introduces a pair of automotive N-channel MOSFETs to expand range
05-02-2024
Toshiba introduces additional -60V P-channel MOSFETs
16-11-2023
Toshiba launches first 30V N-Channel Common-Drain MOSFET
24-10-2023
Toshiba introduces automotive MOSFETs in an innovative new package
31-08-2023
Toshiba releases 3rd generation silicon carbide (SiC) MOSFETs with reduced switching losses
30-08-2023
New 2200V silicon carbide MOSFETs enhance efficiency in challenging applications
18-07-2023
Toshiba launches tiny common-drain N-channel MOSFET
29-06-2023
Toshiba announces new 100V N-Channel MOSFET to support miniaturization within power supply applications
20-06-2023
Toshiba launches 600V super junction N-channel power MOSFET series with ultra-low RDS(on)
20-04-2023
Contributing to a sustainable future: Toshiba proves its power credentials at PCIM 2023
30-03-2023
New high-performance 150V U-MOS X-H MOSFET from Toshiba
31-01-2023
New N-channel power MOSFETs leverage advanced heat dissipation capabilities to support larger automotive currents
13-09-2022
Toshiba to exhibit solutions for power efficiency, smart industry, and mobility at Electronica 2022
27-06-2022
Toshiba announces availability of highly accurate SPICE models
05-04-2022
Toshiba further expands super junction MOSFET range with four additional 650V devices
31-03-2022
New 150V N-channel power MOSFET improves power supply efficiency
17-02-2022
Toshiba introduces a new size-reduced MOSFET gate driver
09-02-2022
Toshiba’s World’s First[1] Current Sensing, Technology Implemented in GaN Devices Enables Lower Power Loss, Higher Accuracy Current Sensing, and Smaller Power Supply Systems
04-02-2022
Toshiba to Expand Power Semiconductor Production Capacity with 300-millimeter Wafer Fabrication Facility
22-09-2021
Toshiba’s New Simulation Technology for Model-Based Development Shortens Verification Times for Automotive Semiconductors by about 90 Percent
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