型號查詢

交叉搜尋

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

關鍵字搜尋

參數搜尋

線上庫存查詢跟購買

100V N通道功率MOSFET產品線的增加, 有助於在汽車設備設計上面積的縮減:XPW4R10ANB、XPW6R30ANB、XPN1300ANC

產品新聞2021年7月

The package photograph of lineup expansion of 100 V N-channel power MOSFETs that help to reduce the size of automotive equipment : XPW4R10ANB, XPW6R30ANB, XPN1300ANC.

東芝電子元件及存儲裝置株式會社(“東芝”)推出了三款有助於減小汽車設備尺寸的100V N通道功率MOSFET產品,進一步擴大了產品線。

新產品“XPW4R10ANB”採用DSOP Advance(WF)L封裝,“XPW6R30ANB”採用DSOP Advance(WF)M封裝,以及“XPN1300ANC”採用TSON Advance(WF)封裝,以上是首批東芝採用這些封裝的100V產品。這些封裝有可焊錫側翼引腳的結構,有利於對電路板安裝自動視覺檢查的條件。並且,它們符合於汽車應用上的可靠性AEC-Q101的標準。此外,它們採用東芝的U-MOSVIII-H低導通電阻製程,有利於降低產品的功耗。

適用於各種汽車設備應用,可滿足客戶的廣泛需求。

特性

  • 符合AEC-Q101
  • 低導通電阻::
      RDS(ON)=3.4 mΩ (典型值) @VGS=10 V (XPW4R10ANB)
      RDS(ON)=5.3 mΩ (典型值) @VGS=10 V (XPW6R30ANB)
      RDS(ON)=11.2 mΩ (典型值) @VGS=10 V (XPN1300ANC)
  • 具有可焊錫側翼引腳結構的貼片式封裝,有利於對電路板安裝自動視覺檢查的條件。

應用

汽車設備

  • 馬達驅動IC
  • 交換式電源供應器
  • 負載開關等

產品規格

( @Ta=25 °C , 除非另有規定)

產品型號 XPW4R10ANB XPW6R30ANB XPN1300ANC
極性 N-通道

絕對

最大

額定值

汲源極電壓

VDSS (V)

100

汲極電流(DC)

ID (A)

70 45 30

汲極電流(脈衝)

IDP (A)

210 135 60

通道溫度

Tch (°C)

175
電氣特性


汲源極導通電阻

RDS(ON) 最大值
(mΩ)

@VGS=
4.5 V
24.2
@VGS=
6.0 V
6.2 9.5
@VGS=
10 V
4.1 6.3 13.3
熱特性


通道到外殼熱阻

Zth(ch-c) 最大值 (°C/W)

0.88 1.13 1.5
封裝 DSOP
Advance(WF)L
DSOP
Advance(WF)M
TSON
Advance(WF)
系列 U-MOSVIII-H

內部電路

The illustration of internal circuits of lineup expansion of 100 V N-channel power MOSFETs that help to reduce the size of automotive equipment : XPW4R10ANB, XPW6R30ANB, XPN1300ANC.

應用電路示例

The illustration of application circuit example of lineup expansion of 100 V N-channel power MOSFETs that help to reduce the size of automotive equipment : XPW4R10ANB, XPW6R30ANB, XPN1300ANC.
The illustration of application circuit example of lineup expansion of 100 V N-channel power MOSFETs that help to reduce the size of automotive equipment : XPW4R10ANB, XPW6R30ANB, XPN1300ANC.
The illustration of application circuit example of lineup expansion of 100 V N-channel power MOSFETs that help to reduce the size of automotive equipment : XPW4R10ANB, XPW6R30ANB, XPN1300ANC.

注:本文所示應用電路僅供參考。

特別是在量產設計階段,需要進行全面評估。

提供這些應用電路示例並不授予任何工業產權許可。

*本文檔中的產品價格和規格、服務內容和聯繫方式等資訊,在公告之日仍為最新資訊,如有變更,恕不另行通知。

開啟新視窗