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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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Radio-Frequency Devices (RF元件)

東芝提供各種射頻(RF)元件,這些設備專門設計用於減小尺寸並提高無線通信設備的性能,例如開關,MOSFET,晶體管和二極管。

產品陣容

RF MOSFETs
東芝的RF-MOSFET的輸出功率範圍為0.1W至12W,電源電壓範圍為3.6V至12.5V,適用於RF功率放大器。
RF Bipolar Transistors
東芝為各種應用提供低失真,低NF和高ESD耐受性的產品。

RF Diodes

Frequency Schottky Barrier Diodes
適用於射頻信號混頻器電路,因為正向電壓低,反向恢復時間短。
Radio-Frequency Switching Diodes
特別適合切換電視調諧器的UHF / VHF頻段。
Variable Capacitance Diodes
這些二極管的電容取決於所施加的反向偏置電壓的值。它們用於射頻匹配電路中以進行電子調諧。

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