Lineup expansion of 100 V N-channel power MOSFETs that help to reduce the size of automotive equipment : XPW4R10ANB, XPW6R30ANB, XPN1300ANC
Product News 2021-07
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched three 100 V N-channel power MOSFET products that help to reduce the size of automotive equipment and expanded the lineup.
The new products are “XPW4R10ANB” using the DSOP Advance(WF)L package, “XPW6R30ANB” using the DSOP Advance(WF)M package, and “XPN1300ANC” using the TSON Advance(WF) package. These are Toshiba’s first 100 V products using these packages. The packages have a wettable flank terminal structure, which facilitates automated on-board visual inspection. And they conform to AEC-Q101, a reliability standard for automotive applications. In addition, they are low On-resistance products using U-MOSVIII-H process, helping reduction of the power consumption of equipment.
They can be used for various automotive equipment applications, meeting a wide range of customer needs.
Features
- AEC-Q101 qualified
- Low On-resistance :
RDS(ON)=3.4 mΩ (typ.) @VGS=10 V (XPW4R10ANB)
RDS(ON)=5.3 mΩ (typ.) @VGS=10 V (XPW6R30ANB)
RDS(ON)=11.2 mΩ (typ.) @VGS=10 V (XPN1300ANC)
- Surface mount type packages with a wettable flank terminal structure, which facilitates automated visual inspection of board mounting conditions.
Applications
Automotive equipment
- Motor drivers
- Switching power supplies
- Load switches, etc.
Product Specifications
(Unless otherwise specified, @Ta=25 °C)
| Part number | XPW4R10ANB | XPW6R30ANB | XPN1300ANC | ||
|---|---|---|---|---|---|
| Polarity | N-channel | ||||
| Absolute maximum ratings |
Drain-source voltage VDSS (V) |
100 | |||
| Drain current (DC) ID (A) |
70 | 45 | 30 | ||
| Drain current (pulsed) IDP (A) |
210 | 135 | 60 | ||
| Channel Temperature Tch (°C) |
175 | ||||
| Electrical characteristics |
Drain-source On-resistance RDS(ON) max (mΩ) |
@VGS= 4.5 V |
– | – | 24.2 |
| @VGS= 6.0 V |
6.2 | 9.5 | – | ||
| @VGS= 10 V |
4.1 | 6.3 | 13.3 | ||
| Thermal characteristics |
Channel-to-case Thermal impedance Zth(ch-c) max (°C/W) |
0.88 | 1.13 | 1.5 | |
| Packages | DSOP Advance(WF)L |
DSOP Advance(WF)M |
TSON Advance(WF) |
||
| Series | U-MOSVIII-H | ||||
Internal Circuits
Application Circuit Examples
Note: The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.