Lineup Expansion of 600V Super Junction Structure N-Channel Power MOSFETs that Help Improve Efficiency of Power Supplies
Product News 2024-07
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has expanded its lineup of 600V N-channel power MOSFETs “DTMOSVI series” fabricated with Toshiba’s latest-generation process[1], with a super junction structure. These new products are suitable for high efficiency switching power supplies used for data centers and power conditioners of photovoltaic generators. Nine products of "TK40N60Z1, TK080N60Z1, TK080A60Z1, TK085V60Z1, TK125N60Z1, TK125A60Z1, TK130V60Z1, TK155A60Z1 and TK165V60Z1" have been added to the lineup in terms of packages and drain-source On-resistance.
By optimizing the gate design and process, 600V DTMOSVI series products have reduced the value of drain-source On-resistance per unit area by approximately 13%, and drain-source On-resistance × gate-drain charge ―the figure of merit for MOSFET performance― by approximately 52% compared to Toshiba’s current generation DTMOSIV-H series products with the same drain-source voltage rating. This means new products have a better trade-off between conduction loss and switching loss than current products. New products of DTMOSVI series will contribute improving efficiency of power supplies.
Toshiba offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.
Toshiba will continue to expand its DTMOSVI series lineup, and support energy conservation by reducing power loss in switching power supplies.
Note:
[1] As of July 31, 2024.
Applications
- Switching power supplies (data center servers, etc.)
- Power conditioners for photovoltaic generators
- Uninterruptible power systems
Features
- Achieves low RDS(ON) × Qgd (drain-source On-resistance × gate-drain charge) and enables high efficiency switching power supplies
Main Specifications
(Ta=25°C)
| Part number | Package | Drain- source voltage VDSS (V) |
Drain current (DC) ID (A) |
Drain- source On-resistance RDS(ON) (Ω) |
Total gate charge Qg (nC) |
Gate- drain charge Qgd (nC) |
Input capacitance Ciss (pF) |
Toshiba’s existing series (DTMOSIV) part number |
|---|---|---|---|---|---|---|---|---|
| VGS=10V | ||||||||
| Max | Typ. | Typ. | Typ. | |||||
| TK040N60Z1 | TO-247 | 600 | 52 | 0.040 | 85 | 22 | 5200 | TK62N60X TK62N60W |
| TK080N60Z1 | TO-247 | 30 | 0.080 | 43 | 12 | 2510 | TK31N60X TK31N60W |
|
| TK080A60Z1 | TO-220SIS | TK31A60W | ||||||
| TK085V60Z1 | DFN8×8 | 0.085 | TK31V60X TK31V60W |
|||||
| TK125N60Z1 | TO-247 | 20 | 0.125 | 28 | 8 | 1620 | TK25N60X TK20N60W |
|
| TK125A60Z1 | TO-220SIS | TK25A60X | ||||||
| TK130V60Z1 | DFN8×8 | 18 | 0.130 | TK25V60X | ||||
| TK155A60Z1 | TO-220SIS | 17 | 0.155 | 24 | 7 | 1350 | TK20A60W | |
| TK165V60Z1 | DFN8×8 | 16 | 0.165 | TK20V60W |
Internal Circuits
Application Circuit Examples
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.
Characteristics curve[2]
Note:
[2] Values measured by Toshiba.
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