TK62N60X

Power MOSFET (N-ch 500V<VDSS≤700V)

  • 相關參考設計(1)

產品概要

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation DTMOSⅣ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

包裝資訊

Toshiba Package Name TO-247
Package Image TO-247
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)
15.94×20.95×5.02
Package Dimensions 檢視
CAD data
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format (Note)

Download from UltraLibrarian® in your desired CAD format (Note)

 Please refer to the link destination to check the detailed size.

(Note)

Ultra Librarian® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).

絕對最大額定值

項目 符號 單位
Drain-Source voltage VDSS 600 V
Gate-Source voltage VGSS +/-30 V
Drain current ID 61.8 A
Power Dissipation PD 400 W

電器特性

項目 符號 條件 單位
Gate threshold voltage (Max) Vth - 3.5 V
Gate threshold voltage (Min) Vth - 2.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 40
Input capacitance (Typ.) Ciss - 6500 pF
Total gate charge (Typ.) Qg VGS=10V 135 nC
Reverse recovery time (Typ.) trr - 500 ns
Reverse recovery charge (Typ.) Qrr - 7000 nC
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文檔

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Dec,2021

Dec,2018

Oct,2023

Oct,2024

Dec,2024

Dec,2024

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS
TK62N60X,S1F 30 Yes

參考設計

Device and prastic inductance of PCB trace of parallel operation of MOSFET(TK62N60X) application circuit.
Parallel Operation of MOSFET(TK62N60X) Application Circuit
This reference design provides example of simulation models/circuit and results for parallel operation using 600V MOSFET to increase output power.

技術方面問題

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常見問題

常見問答

Notes

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