Lineup Expansion of 600V Super Junction Structure N-Channel Power MOSFETs that Help Improve Efficiency of Power Supplies

Product News 2024-07

The package photograph of lineup expansion of 600V super junction structure N-channel power MOSFETs that help improve efficiency of power supplies.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has expanded its lineup of 600V N-channel power MOSFETs “DTMOSVI series” fabricated with Toshiba’s latest-generation process[1], with a super junction structure. These new products are suitable for high efficiency switching power supplies used for data centers and power conditioners of photovoltaic generators. Nine products of "TK40N60Z1, TK080N60Z1, TK080A60Z1, TK085V60Z1, TK125N60Z1, TK125A60Z1, TK130V60Z1, TK155A60Z1 and TK165V60Z1" have been added to the lineup in terms of packages and drain-source On-resistance.

By optimizing the gate design and process, 600V DTMOSVI series products have reduced the value of drain-source On-resistance per unit area by approximately 13%, and drain-source On-resistance × gate-drain charge ―the figure of merit for MOSFET performance― by approximately 52% compared to Toshiba’s current generation DTMOSIV-H series products with the same drain-source voltage rating. This means new products have a better trade-off between conduction loss and switching loss than current products. New products of DTMOSVI series will contribute improving efficiency of power supplies.

Toshiba offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.

Toshiba will continue to expand its DTMOSVI series lineup, and support energy conservation by reducing power loss in switching power supplies.

Note:
[1] As of July 31, 2024.

Applications

  • Switching power supplies (data center servers, etc.)
  • Power conditioners for photovoltaic generators
  • Uninterruptible power systems

Features

  • Achieves low RDS(ON) × Qgd (drain-source On-resistance × gate-drain charge) and enables high efficiency switching power supplies

Main Specifications

(Ta=25°C)

Part number Package Drain-
source
voltage
VDSS
(V)
Drain
current
(DC)
ID
(A)
Drain-
source
On-resistance
RDS(ON)
(Ω)
Total
gate
charge
Qg
(nC)
Gate-
drain
charge
Qgd
(nC)
Input
capacitance
Ciss
(pF)
Toshiba’s
existing series
(DTMOSIV)
part number
VGS=10V
Max Typ. Typ. Typ.
TK040N60Z1 TO-247 600 52 0.040 85 22 5200 TK62N60X
TK62N60W
TK080N60Z1 TO-247 30 0.080 43 12 2510 TK31N60X
TK31N60W
TK080A60Z1 TO-220SIS TK31A60W
TK085V60Z1 DFN8×8 0.085 TK31V60X
TK31V60W
TK125N60Z1 TO-247 20 0.125 28 8 1620 TK25N60X
TK20N60W
TK125A60Z1 TO-220SIS TK25A60X
TK130V60Z1 DFN8×8 18 0.130 TK25V60X
TK155A60Z1 TO-220SIS 17 0.155 24 7 1350 TK20A60W
TK165V60Z1 DFN8×8 16 0.165 TK20V60W

Internal Circuits

The illustration of internal circuits of lineup expansion of 600V super junction structure N-channel power MOSFETs that help improve efficiency of power supplies.

Application Circuit Examples

The illustration of application circuit examples of lineup expansion of 600V super junction structure N-channel power MOSFETs that help improve efficiency of power supplies.

The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

Characteristics curve[2]

The illustration of characteristics curve of lineup expansion of 600V super junction structure N-channel power MOSFETs that help improve efficiency of power supplies.

Note:
[2] Values measured by Toshiba.

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* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.