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Toshiba Launches 1200V Silicon Carbide MOSFET that Contributes to High-efficiency Power Supply

October 19, 2020

Toshiba Electronic Devices & Storage Corporation

Toshiba Launches 1200V Silicon Carbide MOSFET that Contributes to High-efficiency Power Supply

TOKYO— Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TW070J120B,” a 1200V silicon carbide (SiC) MOSFET for industrial applications that include large capacity power supply. Shipments start today.

The power MOSFET using the SiC, a new material, achieves high voltage resistance, high-speed switching, and low On-resistance compared to conventional silicon (Si) MOSFET, IGBT products. Therefore, it will contribute to lower power consumption and system downsizing.

Fabricated with Toshiba’s second-generation chip design[1], which improves the reliability of SiC MOSFET, the new device realizes low input capacitance, a low gate-input charge, and low drain-to-source On-resistance. Compared with “GT40QR21,” Toshiba’s 1200V silicon insulated gate bipolar transistor (IGBT), it cuts turn-off switching loss by about 80% and switching time (fall time) by about 70%, while delivering low On-voltage characteristics with a drain current of 20A or less[2].

Gate threshold voltage is set in the high range of 4.2V to 5.8V, which reduces malfunction risk (unintended turn on or off). Incorporation of an SiC Schottky barrier diode (SBD) with low forward voltage also helps to reduce power loss.

The new MOSFET will contribute to higher efficiency by reducing power loss in industrial applications, such large capacity AC-DC converters, photovoltaic inverter, and large capacity bidirectional DC-DC converters, and will also contribute to reduced equipment size.

Notes:
[1] Toshiba’s news release on July 30, 2020: “Toshiba’s New Device Structure Improves SiC MOSFET Reliability
[2] ambient temperature 25°C

Applications

  • Large capacity AC-DC converters
  • Photovoltaic inverter
  • Large capacity bidirectional DC-DC converters

Features

  • 2nd generation chip design (built-in SiC SBD)
  • High voltage, low input capacitance, low total gate charge, low On-resistance, low diode
    forward voltage, high gate threshold voltage:
          VDSS=1200V, Ciss=1680pF (typ.), Qg=67nC (typ.), RDS(ON)=70mΩ (typ.),
          VDSF=-1.35V (typ.), Vth=4.2 to 5.8V
  • Easy-to-handle enhancement type

Main Specifications

 (Unless otherwise specified, Ta=25℃)

Part

number

Package

Absolute maximum ratings

Electrical Characteristics

Sample Check & Availability

Drain-

source voltage

VDSS

(V)

Drain current

(DC)

ID

@Tc=25℃

(A)

Drain-

source

On-resistance

RDS(ON)

typ.

@VGS=20V

(mΩ)

Gate threshold voltage

Vth

@VDS=10V,

ID=20mA

(V)

Total

gate charge

Qg

typ.

(nC)

Input capacitance

Ciss typ. (pF)

Diode forward voltage

VDSF

typ.

@IDR=10A,

VGS=-5V

(V)

TW070J120B

TO-3P(N)

1200

36.0

70

4.2 to 5.8

67

1680

-1.35

Follow the link below for more on the new product.

TW070J120B

To check availability of the new product at online distributors, visit:

TW070J120B

 

Follow the link below for more on Toshiba SiC MOSFETs.

SiC MOSFET

Follow the link below for more on Toshiba SiC Power Devices.

SiC Power Devices

Customer Inquiries

Power Device Sales & Marketing Department

Tel: +81-3-3457-3933

Contact

*Company names, product names, and service names may be trademarks of their respective companies.
*Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

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