Part Number Search

Cross Reference Search

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

Keyword Search

Parametric Search

Stock Check & Purchase

Select Product Categories


Wide band gap power semiconductors leverage the benefits of Toshiba’s second-generation SiC (silicon carbide) device structure to achieve attractive benefits for high voltage products. Toshiba’s SiC MOSFETs offer improved reliability, superior operation in high-temperature environments, high-speed switching and low on-resistance characteristics compared to conventional Si (silicon) power semiconductors. SiC MOSFETs are suitable for a variety of high-power, high-efficiency applications including industrial power supplies, solar inverters, and UPS.

1200V SiC MOSFET TW070J120B


Fabricated with Toshiba’s second-generation chip design[1], which improves the reliability of SiC MOSFETs, the new device realizes low input capacitance, a low gate-input charge, and low drain-to-source ON-resistance.

[1] Toshiba news release on July 30, 2020: “Toshiba’s New Device Structure Improves SiC MOSFET Reliability

 (Unless otherwise specified, Ta=25℃)




Absolute maximum ratings

Electrical Characteristics












typ. (pF)









4.2 to 5.8




VDSS: Drain-source voltage, ID: Drain current (DC) @Tc=25℃, RDS(ON): Drain-source On-resistance @VGS=20V, 
Vth: Gate threshold voltage @VDS=10V, ID=20mA, Qg: Total gate charge, 
Ciss: Input capacitance, VDSF: Diode forward voltage @IDR=10A, VGS=-5V

Open a new door for power supply with Toshiba’s SiC MOSFETs
Solving environmental and energy problems is an important global issue. While the demand for electric power continues to escalate, the call for energy conservation and the need for highly efficient and compact electric power conversion systems increases rapidly.
Power MOSFET using new SiC materials offer high voltage resistance, high-speed switching, and low on-resistance properties compared to conventional silicon (Si) MOSFET and IGBT products. This will greatly reduce power dissipation and supports a reduction in the size of equipment.
SiC MOSFETs support downsizing and low-loss power supplies
3-Phase AC 400 V Input PFC Converter Reference Design
Using SiC MOSFETs to improve the efficiency of power supply systems
5 kW Isolated Bidirectional DC-DC Converter Reference Design
Using SiC MOSFETs to improve the efficiency of power supply systems
What are the merits of using SiC MOSFETs?
Toshiba SiCMOS achieves low on-resistance and high-speed switching compared with Si IGBT.
SiC MOSFETs Contribute to lower power consumption for industrial applications
Toshiba’s TW070J120B 1200V SiC MOSFET features low ON-resistance, low input capacitance and low total gate charge enabling it to achieve high switching speeds and reduced power consumption.
Features of SiC MOSFETs
Since the dielectric breakdown strength of SiC (silicon carbide) is about 10 times as high as that of Si (silicon), SiC power devices can offer a high withstand voltages and low on-resistance.


Technical topics


LED Lighting
Air Conditioner
Uninterruptible power supply

Reference Design

5 kW Isolated Bidirectional DC-DC Converter
This reference design provides design guide, data and other contents of 5kW Isolated Bidirectional DC-DC Converter using dual active bridge (DAB) conversion method with 1200V SiC MOSFETs.


Technical inquiry

Contact us

Contact us

Frequently Asked Questions


Queries about purchasing, sampling and IC reliability

Stock Check & Purchase


Disclaimer for External Link
Through this website you are able to proceed to the website of our distributors ("Third Party Website") which is not under the control of Toshiba Corporation and its subsidiaries and affiliates (collectively "Toshiba"). The Third Party Website is made available to you as a convenience only and you agree to use the Third Party Website at your own risk. The link of the Third Party Website does not necessarily imply a recommendation or an endorsement by Toshiba of the Third Party Website. Please be aware that Toshiba is not responsible for any transaction done through the Third Party Website, and such transactions shall be subject to terms and conditions which may be provided in the Third Party Website.
A new window will open