Toshiba Releases 3rd Generation SiC MOSFETs for Industrial Equipment with Four-Pin Package that Reduces Switching Loss

August 31, 2023

Toshiba Electronic Devices & Storage Corporation

Toshiba Releases 3rd Generation SiC MOSFETs for Industrial Equipment with Four-Pin Package that Reduces Switching Loss

KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched silicon carbide (SiC) MOSFETs, the "TWxxxZxxxC series,” that use a four-pin TO-247-4L(X) package that reduces switching loss with the company’s latest[1] 3rd generation SiC MOSFETs chip for industrial equipment. Volume shipments of ten products, five with 650V ratings and five with 1200V, start today.

The new products are the first in Toshiba’s SiC MOSFET line-up to use the four-pin TO-247-4L(X) package, which allows Kelvin connection of the signal source terminal for the gate drive. The package can reduce the effect of source wire inductance inside the package, improving high-speed switching performance. For the new TW045Z120C, the turn-on loss is approximately 40% lower and the turn-off loss reduced by approximately 34%[2], compared with Toshiba’s current product TW045N120C in a three-pin TO-247 package. This helps to reduce equipment power loss.

A reference design for a Three-phase inverter using SiC MOSFETs is published online.

Toshiba will continue to expand its line-up to meet market trends and contribute to improving equipment efficiency and enlarging power capacity.

[1] As of August 2023.
[2] As of August 2023, values measured by Toshiba (test condition: VDD=800V, VGG=+18V/0V, ID=20A, RG=4.7Ω, L=100μH, Ta=25°C)

Three-phase inverter using the new SiC MOSFETs

Three-phase inverter using SiC MOSFETs
Simple Block Diagram
Simple Block Diagram


  • Switching power supplies (servers, data centers, communications equipment, etc.)
  • EV charging stations
  • Photovoltaic inverters
  • Uninterruptible power supplies (UPS)


  • Four-pins TO-247-4L(X) package:
    Switching loss is reduced by Kelvin connection of the signal source terminal for the gate drive
  • 3rd generation SiC MOSFETs
  • Low drain-source On-resistance x gate-drain charge
  • Low diode forward voltage: VDSF=-1.35V (typ.) (VGS=-5V)

Main Specifications

(Ta=25°C unless otherwise specified)

Part number Package Absolute maximum ratings Electrical characteristics Sample Check & Availability
Drain-source voltage VDSS (V) Gate-source voltage VGSS (V) Drain current (DC)
ID (A)
Drain-source On-resistance RDS(ON) (mΩ) Gate threshold voltage Vth (V) Total gate charge Qg (nC) Gate-drain charge Qgd (nC) Input capacitance
Ciss (pF)
Diode forward voltage VDSF (V)
Tc=25°C VGS=18V VDS=10V VGS=18V VGS=18V typ. Test condition VDS (V) VGS=-5V
typ. typ. typ. typ.
TW015Z120C TO-247
1200 -10 to 25 100 15 3.0 to 5.0 158 23 6000 800 -1.35 Buy Online
TW030Z120C 60 30 82 13 2925 Buy Online
TW045Z120C 40 45 57 8.9 1969 Buy Online
TW060Z120C 36 60 46 7.8 1530 Buy Online
TW140Z120C 20 140 24 4.2 691 Buy Online
TW015Z65C 650 100 15 128 19 4850 400 Buy Online
TW027Z65C 58 27 65 10 2288 Buy Online
TW048Z65C 40 48 41 6.2 1362 Buy Online
TW083Z65C 30 83 28 3.9 873 Buy Online
TW107Z65C 20 107 21 2.3 600 Buy Online

Follow the link below for more on Toshiba’s MOSFETs.


Follow the links below for more on Toshiba’s solution proposals.

 Uninterruptible Power Supply
 LED lighting

To check availability of the new products at online distributors, visit:

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Customer Inquiries:

  Power Device Sales & Marketing Dept.

  Tel: +81-44-548-2216

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* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

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