Toshiba Releases 3rd Generation SiC MOSFETs for Industrial Equipment with Four-Pin Package that Reduces Switching Loss
August 31, 2023
Toshiba Electronic Devices & Storage Corporation
KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched silicon carbide (SiC) MOSFETs, the "TWxxxZxxxC series,” that use a four-pin TO-247-4L(X) package that reduces switching loss with the company’s latest[1] 3rd generation SiC MOSFETs chip for industrial equipment. Volume shipments of ten products, five with 650V ratings and five with 1200V, start today.
The new products are the first in Toshiba’s SiC MOSFET line-up to use the four-pin TO-247-4L(X) package, which allows Kelvin connection of the signal source terminal for the gate drive. The package can reduce the effect of source wire inductance inside the package, improving high-speed switching performance. For the new TW045Z120C, the turn-on loss is approximately 40% lower and the turn-off loss reduced by approximately 34%[2], compared with Toshiba’s current product TW045N120C in a three-pin TO-247 package. This helps to reduce equipment power loss.
A reference design for a Three-phase inverter using SiC MOSFETs is published online.
Toshiba will continue to expand its line-up to meet market trends and contribute to improving equipment efficiency and enlarging power capacity.
Notes:
[1] As of August 2023.
[2] As of August 2023, values measured by Toshiba (test condition: VDD=800V, VGG=+18V/0V, ID=20A, RG=4.7Ω, L=100μH, Ta=25°C)
Three-phase inverter using the new SiC MOSFETs
Applications
- Switching power supplies (servers, data centers, communications equipment, etc.)
- EV charging stations
- Photovoltaic inverters
- Uninterruptible power supplies (UPS)
Features
- Four-pins TO-247-4L(X) package:
Switching loss is reduced by Kelvin connection of the signal source terminal for the gate drive - 3rd generation SiC MOSFETs
- Low drain-source On-resistance x gate-drain charge
- Low diode forward voltage: VDSF=-1.35V (typ.) (VGS=-5V)
Main Specifications
(Ta=25°C unless otherwise specified)
| Part number | Package | Absolute maximum ratings | Electrical characteristics | Sample Check & Availability | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Drain-source voltage VDSS (V) | Gate-source voltage VGSS (V) | Drain current (DC) ID (A) |
Drain-source On-resistance RDS(ON) (mΩ) | Gate threshold voltage Vth (V) | Total gate charge Qg (nC) | Gate-drain charge Qgd (nC) | Input capacitance Ciss (pF) |
Diode forward voltage VDSF (V) | ||||
| Tc=25°C | VGS=18V | VDS=10V | VGS=18V | VGS=18V | typ. | Test condition VDS (V) | VGS=-5V | |||||
| typ. | typ. | typ. | typ. | |||||||||
| TW015Z120C | TO-247 -4L(X) |
1200 | -10 to 25 | 100 | 15 | 3.0 to 5.0 | 158 | 23 | 6000 | 800 | -1.35 |  |
| TW030Z120C | 60 | 30 | 82 | 13 | 2925 | |
||||||
| TW045Z120C | 40 | 45 | 57 | 8.9 | 1969 | |
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| TW060Z120C | 36 | 60 | 46 | 7.8 | 1530 | |
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| TW140Z120C | 20 | 140 | 24 | 4.2 | 691 | |
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| TW015Z65C | 650 | 100 | 15 | 128 | 19 | 4850 | 400 | |
||||
| TW027Z65C | 58 | 27 | 65 | 10 | 2288 | |
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| TW048Z65C | 40 | 48 | 41 | 6.2 | 1362 | |
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| TW083Z65C | 30 | 83 | 28 | 3.9 | 873 | |
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| TW107Z65C | 20 | 107 | 21 | 2.3 | 600 | |
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Follow the links below for more on the new product.
TW015Z120C
TW030Z120C
TW045Z120C
TW060Z120C
TW140Z120C
TW015Z65C
TW027Z65C
TW048Z65C
TW083Z65C
TW107Z65C
Follow the link below for more on Toshiba’s MOSFETs.
Follow the links below for more on Toshiba’s solution proposals.
Application
Server
Uninterruptible Power Supply
LED lighting
To check availability of the new products at online distributors, visit:
TW015Z120C
TW030Z120C
TW045Z120C
TW060Z120C
TW140Z120C
TW015Z65C
TW027Z65C
TW048Z65C
TW083Z65C
TW107Z65C
Customer Inquiries:
Power Device Sales & Marketing Dept.
Tel: +81-44-548-2216
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* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.