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AC-DC converter circuit

AC-DC converter for 48 V system

Example of half-bridge type AC-DC converter circuit

3 kW AC-DC converter for 48 V system

Example of AC-DC converter circuit using semi bridgeless PFC

1.6 kW LLC AC-DC converter for 48 V system

Example of AC-DC converter circuit using LLC topology

1.6 kW AC-DC converter for 12 V system (bridgeless PFC)

Example of AC-DC converter circuit using bridgeless PFC

1.6 kW AC-DC converter for 12 V system (interleaved PFC)

Example of AC-DC converter circuit using interleaved PFC

1.1 kW ITTF (Interleaved Two Transistor Forward) AC-DC converter for 12 V system

Example of AC-DC converter circuit using ITTF method

DC-DC converter circuit

1.2 V / 100 A output DC-DC converter for 48 V bus system

Example of half-bridge type DC-DC converter circuit

300 W isolated DC-DC converter for 48 V system

Example of full-bridge type DC-DC converter circuit

Power line to storage devices

Example of power line protection circuit from controller hub to strage devices

Peripheral interface circuits

Examples of peripheral interface signal line protection circuits

Over temperature monitoring circuit

Example of multi-point temperature rise monitoring circuit.

Fan drive circuit

Example of fan motor drive circuit

Sub block diagram

AC-DC converter circuit

AC-DC converter for 48 V system

Example of half-bridge type AC-DC converter circuit

U-MOS Series MOSFET (1)
U-MOS Series MOSFET (2)
DTMOS Series MOSFET (1)
DTMOS Series MOSFET (2)
DTMOS Series MOSFET (3)
SiC MOSFET
SiC Schottky barrier diode
IC output photocoupler for high speed communication

Improved on-resistance and reverse recovery characteristic contribute to realizing the set with high efficiency.

Part Number	TPM1R908QM	TPM7R10CQ5
Toshiba Package Name	SOP Advance(E)	SOP Advance(E)
V_DSS (Max) [V]	80	150
I_D (Max) [A]	238	120
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.0019	0.0071
Polarity	N-ch	N-ch

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Improved on-resistance and wide Safety Operating Area (SOA) contribute to realizing the set with high efficiency and reliability.

Part Number	TPHR6503PL	TPM1R908QM	TPH3R10AQM
Toshiba Package Name	SOP Advance	SOP Advance(E)	SOP Advance(N)
V_DSS (Max) [V]	30	80	100
I_D (Max) [A]	393	238	120
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.00065	0.0019	0.0031
Polarity	N-ch	N-ch	N-ch

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The R_DS(ON) x Q_gd is reduced by 40 % (compared with Toshiba’s conventional products) to improve power efficiency, and contributing to miniaturization of the set.

Part Number	TK040N65Z	TK040Z65Z	TK090A65Z	TK099V65Z	TK090U65Z
Toshiba Package Name	TO-247	TO-247-4L	TO-220SIS	DFN 8×8	TOLL
V_DSS (Max) [V]	650	650	650	650	650
I_D (Max) [A]	57	57	30	30	30
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.04	0.04	0.09	0.099	0.09
Polarity	N-ch	N-ch	N-ch	N-ch	N-ch

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The R_DS(ON) x Q_gd is reduced by 40 % (compared with Toshiba’s conventional products) to improve power efficiency, and contributing to miniaturization of the set.

Part Number	TK110N65Z	TK110Z65Z	TK110A65Z	TK125V65Z	TK110U65Z	TK155U65Z
Toshiba Package Name	TO-247	TO-247-4L	TO-220SIS	DFN 8×8	TOLL	TOLL
V_DSS (Max) [V]	650	650	650	650	650	650
I_D (Max) [A]	24	24	24	24	24	18
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.11	0.11	0.11	0.125	0.11	0.155
Polarity	N-ch	N-ch	N-ch	N-ch	N-ch	N-ch

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The R_DS(ON) x Q_gd is reduced by 40 % (compared with Toshiba’s conventional products) to improve power efficiency, and contributing to miniaturization of the set.

Part Number	TK024N60Z1	TK080N60Z1	TK125A60Z1	TK165V60Z1
Toshiba Package Name	TO-247	TO-247	TO-220SIS	DFN 8×8
V_DSS (Max) [V]	600	600	600	600
I_D (Max) [A]	80	30	20	16
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.024	0.08	0.125	0.165
Polarity	N-ch	N-ch	N-ch	N-ch

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The performance index R_DS(ON) x Q_gd , which shows switching characteristics, is reduced. This contributes to lower loss of power supply in application.

Part Number	TW027U65C	TW048U65C	TW083U65C	TW015Z65C	TW027Z65C	TW048Z65C
Toshiba Package Name	TOLL	TOLL	TOLL	TO-247-4L(X)	TO-247-4L(X)	TO-247-4L(X)
V_DSS (Max) [V]	650	650	650	650	650	650
I_D (Max) [A]	57	39	28	100	58	40
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 18.0 [V]	0.040	0.071	0.124	0.022	0.038	0.069
Polarity	N-ch	N-ch	N-ch	N-ch	N-ch	N-ch

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SiC Schottky bsrrier diodes with low loss and high efficiency are realized by adopting new metal and optimizing device design.

Part Number	TRS24N65FB	TRS2E65H	TRS8E65H	TRS12E65H	TRS4V65H	TRS12V65H
Toshiba Package Name	TO-247	TO-220-2L	TO-220-2L	TO-220-2L	DFN 8×8	DFN 8×8
I_F(DC) (Max) [A]	24	2	8	12	4	12
V_RRM (Max) [V]	650	650	650	650	650	650
V_F (Max) [V]	1.6	1.35	1.35	1.35	1.35	1.35
I_R (Max) [µA] @ V_RRM (Max)	60	40	90	120	55	120

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Photocoupler that consists of an infrared light-emitting diode and an integrated photodetector with high gain and high speed.

Part Number	TLP2767	TLP2370
Toshiba Package Name	SO6L	5pin SO6
BV_S (Min) [V_rms] @ t = 60 [s]	5000	3750
V_CC / V_DD (Min) [V]	2.7	2.7
V_CC / V_DD (Max) [V]	5.5	5.5
I_CC / I_DD (Max) [mA]	2.5	0.4
Output Interface	totem-pole(INV)	totem-pole(BUF)

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3 kW AC-DC converter for 48 V system

Example of AC-DC converter circuit using semi bridgeless PFC

U-MOS Series MOSFET (1)
U-MOS Series MOSFET (2)
SiC MOSFET
SiC Schottky barrier diode
Standard digital isolator

Improved on-resistance and reverse recovery characteristic contribute to realizing the set with high efficiency.

Part Number	TPM1R908QM	TPM7R10CQ5
Toshiba Package Name	SOP Advance(E)	SOP Advance(E)
V_DSS (Max) [V]	80	150
I_D (Max) [A]	238	120
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.0019	0.0071
Polarity	N-ch	N-ch

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Improved on-resistance and wide Safety Operating Area (SOA) contribute to realizing the set with high efficiency and reliability.

Part Number	TPHR6503PL	TPM1R908QM	TPH3R10AQM
Toshiba Package Name	SOP Advance	SOP Advance(E)	SOP Advance(N)
V_DSS (Max) [V]	30	80	100
I_D (Max) [A]	393	238	120
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.00065	0.0019	0.0031
Polarity	N-ch	N-ch	N-ch

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The performance index R_DS(ON) x Q_gd , which shows switching characteristics, is reduced. This contributes to lower loss of power supply in application.

Part Number	TW027U65C	TW048U65C	TW083U65C	TW015Z65C	TW027Z65C	TW048Z65C
Toshiba Package Name	TOLL	TOLL	TOLL	TO-247-4L(X)	TO-247-4L(X)	TO-247-4L(X)
V_DSS (Max) [V]	650	650	650	650	650	650
I_D (Max) [A]	57	39	28	100	58	40
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 18.0 [V]	0.040	0.071	0.124	0.022	0.038	0.069
Polarity	N-ch	N-ch	N-ch	N-ch	N-ch	N-ch

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SiC Schottky barrier diodes with low loss and high efficiency are realized by adopting new metal and optimizing device design.

Part Number	TRS24N65FB	TRS2E65H	TRS8E65H	TRS12E65H	TRS4V65H	TRS12V65H
Toshiba Package Name	TO-247	TO-220-2L	TO-220-2L	TO-220-2L	DFN 8×8	DFN 8×8
I_F(DC) (Max) [A]	24	2	8	12	4	12
V_RRM (Max) [V]	650	650	650	650	650	650
V_F (Max) [V]	1.6	1.35	1.35	1.35	1.35	1.35
I_R (Max) [µA] @ V_RRM (Max)	60	40	90	120	55	120

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Digital isolator for high-speed logic circuits, suitable for isolating communication lines.

Part Number	DCL540C01	DCL540D01	DCL540L01	DCL540H01	DCL541A01	DCL541B01
Toshiba Package Name	SOIC16-W	SOIC16-W	SOIC16-W	SOIC16-W	SOIC16-W	SOIC16-W
BV_S (Min) [V_rms] @ t = 60 [s]	5000	5000	5000	5000	5000	5000
V_DD (Min) [V]	2.25	2.25	2.25	2.25	2.25	2.25
V_DD (Max) [V]	5.5	5.5	5.5	5.5	5.5	5.5
Output Interface	totem-pole(BUF)	totem-pole(BUF)	totem-pole(BUF)	totem-pole(BUF)	totem-pole(BUF)	totem-pole(BUF)

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1.6 kW LLC AC-DC converter for 48 V system

Example of AC-DC converter circuit using LLC topology

U-MOS Series MOSFET
DTMOS Series MOSFET
SiC Schottky barrier diode
MCU

Improved on-resistance and wide Safety Operating Area (SOA) contribute to realizing the set with high efficiency and reliability.

Part Number	TPHR6503PL	TPM1R908QM	TPH3R10AQM
Toshiba Package Name	SOP Advance	SOP Advance(E)	SOP Advance(N)
V_DSS (Max) [V]	30	80	100
I_D (Max) [A]	393	238	120
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.00065	0.0019	0.0031
Polarity	N-ch	N-ch	N-ch

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The R_DS(ON) x Q_gd is reduced by 40 % (compared with Toshiba’s conventional products) to improve power efficiency, and contributing to miniaturization of the set.

Part Number	TK024N60Z1	TK080N60Z1	TK125A60Z1	TK165V60Z1
Toshiba Package Name	TO-247	TO-247	TO-220SIS	DFN 8×8
V_DSS (Max) [V]	600	600	600	600
I_D (Max) [A]	80	30	20	16
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.024	0.08	0.125	0.165
Polarity	N-ch	N-ch	N-ch	N-ch

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SiC Schottky barrier diodes with low loss and high efficiency are realized by adopting new metal and optimizing device design.

Part Number	TRS24N65FB	TRS2E65H	TRS8E65H	TRS12E65H	TRS4V65H	TRS12V65H
Toshiba Package Name	TO-247	TO-220-2L	TO-220-2L	TO-220-2L	DFN 8×8	DFN 8×8
I_F(DC) (Max) [A]	24	2	8	12	4	12
V_RRM (Max) [V]	650	650	650	650	650	650
V_F (Max) [V]	1.6	1.35	1.35	1.35	1.35	1.35
I_R (Max) [µA] @ V_RRM (Max)	60	40	90	120	55	120

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Contribute to system cost down, high efficiency system and development efficiency improvement.

Series	TX03 Series
Group	M370 Group

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1.6 kW AC-DC converter for 12 V system (bridgeless PFC)

Example of AC-DC converter circuit using bridgeless PFC

U-MOS Series MOSFET (1)
U-MOS Series MOSFET (2)
DTMOS Series MOSFET (1)
DTMOS Series MOSFET (2)
DTMOS Series MOSFET (3)
SiC MOSFET
SiC Schottky barrier diode
IC output photocoupler for high speed communication

Improved on-resistance and output charge characteristic contribute to realizing the set with high efficiency.

Part Number	TPHR6704RL	TPM1R006PL
Toshiba Package Name	SOP Advance(N)	SOP Advance(E)
V_DSS (Max) [V]	40	60
I_D (Max) [A]	420	341
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.00067	0.001
Polarity	N-ch	N-ch

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Improved on-resistance and wide Safety Operating Area (SOA) contribute to realizing the set with high efficiency and reliability.

Part Number	TPHR6503PL	TPM1R908QM	TPH3R10AQM
Toshiba Package Name	SOP Advance	SOP Advance(E)	SOP Advance(N)
V_DSS (Max) [V]	30	80	100
I_D (Max) [A]	393	238	120
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.00065	0.0019	0.0031
Polarity	N-ch	N-ch	N-ch

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The R_DS(ON) x Q_gd is reduced by 40 % (compared with Toshiba’s conventional products) to improve power efficiency, and contributing to miniaturization of the set.

Part Number	TK040N65Z	TK040Z65Z	TK090A65Z	TK099V65Z	TK090U65Z
Toshiba Package Name	TO-247	TO-247-4L	TO-220SIS	DFN 8×8	TOLL
V_DSS (Max) [V]	650	650	650	650	650
I_D (Max) [A]	57	57	30	30	30
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.04	0.04	0.09	0.099	0.09
Polarity	N-ch	N-ch	N-ch	N-ch	N-ch

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The R_DS(ON) x Q_gd is reduced by 40 % (compared with Toshiba’s conventional products) to improve power efficiency, and contributing to miniaturization of the set.

Part Number	TK110N65Z	TK110Z65Z	TK110A65Z	TK125V65Z	TK110U65Z	TK155U65Z
Toshiba Package Name	TO-247	TO-247-4L	TO-220SIS	DFN 8×8	TOLL	TOLL
V_DSS (Max) [V]	650	650	650	650	650	650
I_D (Max) [A]	24	24	24	24	24	18
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.11	0.11	0.11	0.125	0.11	0.155
Polarity	N-ch	N-ch	N-ch	N-ch	N-ch	N-ch

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The R_DS(ON) x Q_gd is reduced by 40 % (compared with Toshiba’s conventional products) to improve power efficiency, and contributing to miniaturization of the set.

Part Number	TK024N60Z1	TK080N60Z1	TK125A60Z1	TK165V60Z1
Toshiba Package Name	TO-247	TO-247	TO-220SIS	DFN 8×8
V_DSS (Max) [V]	600	600	600	600
I_D (Max) [A]	80	30	20	16
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.024	0.08	0.125	0.165
Polarity	N-ch	N-ch	N-ch	N-ch

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The performance index R_DS(ON) x Q_gd , which shows switching characteristics, is reduced. This contributes to lower loss of power supply in application.

Part Number	TW027U65C	TW048U65C	TW083U65C	TW015Z65C	TW027Z65C	TW048Z65C
Toshiba Package Name	TOLL	TOLL	TOLL	TO-247-4L(X)	TO-247-4L(X)	TO-247-4L(X)
V_DSS (Max) [V]	650	650	650	650	650	650
I_D (Max) [A]	57	39	28	100	58	40
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 18.0 [V]	0.040	0.071	0.124	0.022	0.038	0.069
Polarity	N-ch	N-ch	N-ch	N-ch	N-ch	N-ch

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SiC Schottky barrier diodes with low loss and high efficiency are realized by adopting new metal and optimizing device design.

Part Number	TRS24N65FB	TRS2E65H	TRS8E65H	TRS12E65H	TRS4V65H	TRS12V65H
Toshiba Package Name	TO-247	TO-220-2L	TO-220-2L	TO-220-2L	DFN 8×8	DFN 8×8
I_F(DC) (Max) [A]	24	2	8	12	4	12
V_RRM (Max) [V]	650	650	650	650	650	650
V_F (Max) [V]	1.6	1.35	1.35	1.35	1.35	1.35
I_R (Max) [µA] @ V_RRM (Max)	60	40	90	120	55	120

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Photocoupler that consists of an infrared light-emitting diode and an integrated photodetector with high gain and high speed.

Part Number	TLP2767	TLP2370
Toshiba Package Name	SO6L	5pin SO6
BV_S (Min) [V_rms] @ t = 60 [s]	5000	3750
V_CC / V_DD (Min) [V]	2.7	2.7
V_CC / V_DD (Max) [V]	5.5	5.5
I_CC / I_DD (Max) [mA]	2.5	0.4
Output Interface	totem-pole(INV)	totem-pole(BUF)

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1.6 kW AC-DC converter for 12 V system (interleaved PFC)

Example of AC-DC converter circuit using interleaved PFC

U-MOS Series MOSFET (1)
U-MOS Series MOSFET (2)
DTMOS Series MOSFET (1)
DTMOS Series MOSFET (2)
DTMOS Series MOSFET (3)
SiC MOSFET
SiC Schottky barrier diode
IC output photocoupler for high speed communication

Improved on-resistance and output charge characteristic contribute to realizing the set with high efficiency.

Part Number	TPHR6704RL	TPM1R006PL
Toshiba Package Name	SOP Advance(N)	SOP Advance(E)
V_DSS (Max) [V]	40	60
I_D (Max) [A]	420	341
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.00067	0.001
Polarity	N-ch	N-ch

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Improved on-resistance and wide Safety Operating Area (SOA) contribute to realizing the set with high efficiency and reliability.

Part Number	TPHR6503PL	TPM1R908QM	TPH3R10AQM
Toshiba Package Name	SOP Advance	SOP Advance(E)	SOP Advance(N)
V_DSS (Max) [V]	30	80	100
I_D (Max) [A]	393	238	120
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.00065	0.0019	0.0031
Polarity	N-ch	N-ch	N-ch

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The R_DS(ON) x Q_gd is reduced by 40 % (compared with Toshiba’s conventional products) to improve power efficiency, and contributing to miniaturization of the set.

Part Number	TK040N65Z	TK040Z65Z	TK090A65Z	TK099V65Z	TK090U65Z
Toshiba Package Name	TO-247	TO-247-4L	TO-220SIS	DFN 8×8	TOLL
V_DSS (Max) [V]	650	650	650	650	650
I_D (Max) [A]	57	57	30	30	30
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.04	0.04	0.09	0.099	0.09
Polarity	N-ch	N-ch	N-ch	N-ch	N-ch

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The R_DS(ON) x Q_gd is reduced by 40 % (compared with Toshiba’s conventional products) to improve power efficiency, and contributing to miniaturization of the set.

Part Number	TK110N65Z	TK110Z65Z	TK110A65Z	TK125V65Z	TK110U65Z	TK155U65Z
Toshiba Package Name	TO-247	TO-247-4L	TO-220SIS	DFN 8×8	TOLL	TOLL
V_DSS (Max) [V]	650	650	650	650	650	650
I_D (Max) [A]	24	24	24	24	24	18
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.11	0.11	0.11	0.125	0.11	0.155
Polarity	N-ch	N-ch	N-ch	N-ch	N-ch	N-ch

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The R_DS(ON) x Q_gd is reduced by 40 % (compared with Toshiba’s conventional products) to improve power efficiency, and contributing to miniaturization of the set.

Part Number	TK024N60Z1	TK080N60Z1	TK125A60Z1	TK165V60Z1
Toshiba Package Name	TO-247	TO-247	TO-220SIS	DFN 8×8
V_DSS (Max) [V]	600	600	600	600
I_D (Max) [A]	80	30	20	16
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.024	0.08	0.125	0.165
Polarity	N-ch	N-ch	N-ch	N-ch

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The performance index R_DS(ON) x Q_gd , which shows switching characteristics, is reduced. This contributes to lower loss of power supply in application.

Part Number	TW027U65C	TW048U65C	TW083U65C	TW015Z65C	TW027Z65C	TW048Z65C
Toshiba Package Name	TOLL	TOLL	TOLL	TO-247-4L(X)	TO-247-4L(X)	TO-247-4L(X)
V_DSS (Max) [V]	650	650	650	650	650	650
I_D (Max) [A]	57	39	28	100	58	40
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 18.0 [V]	0.040	0.071	0.124	0.022	0.038	0.069
Polarity	N-ch	N-ch	N-ch	N-ch	N-ch	N-ch

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SiC Schottky barrier diodes with low loss and high efficiency are realized by adopting new metal and optimizing device design.

Part Number	TRS24N65FB	TRS2E65H	TRS8E65H	TRS12E65H	TRS4V65H	TRS12V65H
Toshiba Package Name	TO-247	TO-220-2L	TO-220-2L	TO-220-2L	DFN 8×8	DFN 8×8
I_F(DC) (Max) [A]	24	2	8	12	4	12
V_RRM (Max) [V]	650	650	650	650	650	650
V_F (Max) [V]	1.6	1.35	1.35	1.35	1.35	1.35
I_R (Max) [µA] @ V_RRM (Max)	60	40	90	120	55	120

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Photocoupler that consists of an infrared light-emitting diode and an integrated photodetector with high gain and high speed.

Part Number	TLP2767	TLP2370
Toshiba Package Name	SO6L	5pin SO6
BV_S (Min) [V_rms] @ t = 60 [s]	5000	3750
V_CC / V_DD (Min) [V]	2.7	2.7
V_CC / V_DD (Max) [V]	5.5	5.5
I_CC / I_DD (Max) [mA]	2.5	0.4
Output Interface	totem-pole(INV)	totem-pole(BUF)

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1.1 kW ITTF (Interleaved Two Transistor Forward) AC-DC converter for 12 V system

Example of AC-DC converter circuit using ITTF method

U-MOS Series MOSFET (1)
U-MOS Series MOSFET (2)
DTMOS Series MOSFET
SiC MOSFET
Standard digital isolator

Improved on-resistance and output charge characteristic contribute to realizing the set with high efficiency.

Part Number	TPHR6704RL	TPM1R006PL
Toshiba Package Name	SOP Advance(N)	SOP Advance(E)
V_DSS (Max) [V]	40	60
I_D (Max) [A]	420	341
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.00067	0.001
Polarity	N-ch	N-ch

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Improved on-resistance and wide Safety Operating Area (SOA) contribute to realizing the set with high efficiency and reliability.

Part Number	TPHR6503PL	TPM1R908QM	TPH3R10AQM
Toshiba Package Name	SOP Advance	SOP Advance(E)	SOP Advance(N)
V_DSS (Max) [V]	30	80	100
I_D (Max) [A]	393	238	120
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.00065	0.0019	0.0031
Polarity	N-ch	N-ch	N-ch

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The R_DS(ON) x Q_gd is reduced by 40 % (compared with Toshiba’s conventional products) to improve power efficiency, and contributing to miniaturization of the set.

Part Number	TK024N60Z1	TK080N60Z1	TK125A60Z1	TK165V60Z1
Toshiba Package Name	TO-247	TO-247	TO-220SIS	DFN 8×8
V_DSS (Max) [V]	600	600	600	600
I_D (Max) [A]	80	30	20	16
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.024	0.08	0.125	0.165
Polarity	N-ch	N-ch	N-ch	N-ch

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The performance index R_DS(ON) x Q_gd , which shows switching characteristics, is reduced. This contributes to lower loss of power supply in application.

Part Number	TW027U65C	TW048U65C	TW083U65C	TW015Z65C	TW027Z65C	TW048Z65C
Toshiba Package Name	TOLL	TOLL	TOLL	TO-247-4L(X)	TO-247-4L(X)	TO-247-4L(X)
V_DSS (Max) [V]	650	650	650	650	650	650
I_D (Max) [A]	57	39	28	100	58	40
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 18.0 [V]	0.040	0.071	0.124	0.022	0.038	0.069
Polarity	N-ch	N-ch	N-ch	N-ch	N-ch	N-ch

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Digital isolator for high-speed logic circuits, suitable for isolating communication lines.

Part Number	DCL540C01	DCL540D01	DCL540L01	DCL540H01	DCL541A01	DCL541B01
Toshiba Package Name	SOIC16-W	SOIC16-W	SOIC16-W	SOIC16-W	SOIC16-W	SOIC16-W
BV_S (Min) [V_rms] @ t = 60 [s]	5000	5000	5000	5000	5000	5000
V_DD (Min) [V]	2.25	2.25	2.25	2.25	2.25	2.25
V_DD (Max) [V]	5.5	5.5	5.5	5.5	5.5	5.5
Output Interface	totem-pole(BUF)	totem-pole(BUF)	totem-pole(BUF)	totem-pole(BUF)	totem-pole(BUF)	totem-pole(BUF)

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DC-DC converter circuit

1.2 V / 100 A output DC-DC converter for 48 V bus system

Example of half-bridge type DC-DC converter circuit

U-MOS Series MOSFET (1)
U-MOS Series MOSFET (2)
Transistor output photocoupler
IC output photocoupler for high speed communication

Improved on-resistance and switching characteristic contribute to realizing the set with high efficiency.

Part Number	TPH9R00CQH	TPN12008QM	TPN1200APL
Toshiba Package Name	SOP Advance / SOP Advance(N)	TSON Advance	TSON Advance
V_DSS (Max) [V]	150	80	100
I_D (Max) [A]	64	26	66
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.009	0.0123	0.0115
Polarity	N-ch	N-ch	N-ch

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Improved on-resistance and output charge characteristic contribute to realizing the set with high efficiency.

Part Number	TPHR6503PL	TPHR6704RL	TPWR6003PL	TPWR8004PL
Toshiba Package Name	SOP Advance	SOP Advance(N)	DSOP Advance	DSOP Advance
V_DSS (Max) [V]	30	40	30	40
I_D (Max) [A]	393	420	412	340
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.00065	0.00067	0.0006	0.0008
Polarity	N-ch	N-ch	N-ch	N-ch

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Contribute to the elimination of equipment maintenance by improving reliability and the reduction of the board footprint area.

Part Number	TLP383	TLP291(SE
Toshiba Package Name	4pin SO6L	SO4
BV_S (Min) [V_rms] @ t = 60 [s]	5000	3750
V_CEO (Max) [V]	80	80
T_opr [°C]	-55 to 125	-55 to 110

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Photocoupler that consists of an infrared light-emitting diode and an integrated photodetector with high gain and high speed.

Part Number	TLP2767	TLP2370
Toshiba Package Name	SO6L	5pin SO6
BV_S (Min) [V_rms] @ t = 60 [s]	5000	3750
V_CC / V_DD (Min) [V]	2.7	2.7
V_CC / V_DD (Max) [V]	5.5	5.5
I_CC / I_DD (Max) [mA]	2.5	0.4
Output Interface	totem-pole(INV)	totem-pole(BUF)

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300 W isolated DC-DC converter for 48 V system

Example of full-bridge type DC-DC converter circuit

U-MOS Series MOSFET (1)
U-MOS Series MOSFET (2)
Transistor output photocoupler
IC output photocoupler for high speed communication

Improved on-resistance and switching characteristic contribute to realizing the set with high efficiency.

Part Number	TPH9R00CQH	TPN12008QM	TPN1200APL
Toshiba Package Name	SOP Advance / SOP Advance(N)	TSON Advance	TSON Advance
V_DSS (Max) [V]	150	80	100
I_D (Max) [A]	64	26	66
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.009	0.0123	0.0115
Polarity	N-ch	N-ch	N-ch

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Improved on-resistance and output charge characteristic contribute to realizing the set with high efficiency.

Part Number	TPHR6704RL	TPM1R006PL
Toshiba Package Name	SOP Advance(N)	SOP Advance(E)
V_DSS (Max) [V]	40	60
I_D (Max) [A]	420	341
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 10.0 [V]	0.00067	0.001
Polarity	N-ch	N-ch

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Contribute to the elimination of equipment maintenance by improving reliability and the reduction of the board footprint area.

Part Number	TLP383	TLP291(SE
Toshiba Package Name	4pin SO6L	SO4
BV_S (Min) [V_rms] @ t = 60 [s]	5000	3750
V_CEO (Max) [V]	80	80
T_opr [°C]	-55 to 125	-55 to 110

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Photocoupler that consists of an infrared light-emitting diode and an integrated photodetector with high gain and high speed.

Part Number	TLP2767	TLP2370
Toshiba Package Name	SO6L	5pin SO6
BV_S (Min) [V_rms] @ t = 60 [s]	5000	3750
V_CC / V_DD (Min) [V]	2.7	2.7
V_CC / V_DD (Max) [V]	5.5	5.5
I_CC / I_DD (Max) [mA]	2.5	0.4
Output Interface	totem-pole(INV)	totem-pole(BUF)

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Power line to storage devices

Example of power line protection circuit from controller hub to strage devices

Electronic fuse (eFuse IC) can be used repeatedly to protect circuits from abnormal conditions such as overcurrent and overvoltage.

Part Number	TCKE800NA	TCKE805NA	TCKE812NA
Toshiba Package Name	WSON10B	WSON10B	WSON10B
V_IN (Max) [V]	18	18	18
R_ON (Typ.) [mΩ]	28	28	28
V_OVC (Typ.) [V]		6.04	15.1
Recovery Operation Type	Auto-retry	Auto-retry	Auto-retry

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Electronic fuse (eFuse IC) can be used repeatedly to protect circuits from abnormal conditions such as overcurrent and overvoltage.

Part Number	TCKE800NL	TCKE805NL	TCKE812NL	TCKE712BNL
Toshiba Package Name	WSON10B	WSON10B	WSON10B	WSON10
V_IN (Max) [V]	18	18	18	13.2
R_ON (Typ.) [mΩ]	28	28	28	53
V_OVC (Typ.) [V]		6.04	15.1
Recovery Operation Type	Latch	Latch	Latch	Latch

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Wide lineup of small package with high power dissipation and reverse voltage. Low V_F Schottky barrier diode suppresses negative voltage surges.

Part Number	CUHS20F30	CUHS20F40
Toshiba Package Name	SOD-323HE (US2H)	SOD-323HE (US2H)
V_RRM (Max) [V]
V_R (Max) [V]	30	40
C_T (Typ.) [pF]	380	300

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Wide lineup of small package with high power dissipation and reverse voltage. Low V_F Schottky barrier diode suppresses negative voltage surges.

Part Number	CUHS10F60	CUHS15F60	CUHS20F60	CUHS15S60	CUHS20S60
Toshiba Package Name	SOD-323HE (US2H)	SOD-323HE (US2H)	SOD-323HE (US2H)	SOD-323HE (US2H)	SOD-323HE (US2H)
V_RRM (Max) [V]
V_R (Max) [V]	60	60	60	60	60
C_T (Typ.) [pF]	130	130	300	130	290

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A wide lineup of packages and Zener voltage are available to meet diverse needs.

Part Number	CSLZ5V6	CUHZ5V6	CSLZ6V2	CUHZ6V2	CRY62
Toshiba Package Name	SOD-962 (SL2)	SOD-323HE (US2H)	SOD-962 (SL2)	SOD-323HE (US2H)	S-FLAT
P_D (Max) [W]	0.15	1.2	0.15	1.2	0.7
V_Z (Typ.) [V]	5.6	5.6	6.2	6.2	6.2

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A wide lineup of packages and Zener voltage are available to meet diverse needs.

Part Number	CSLZ16V	CUHZ16V	CRZ16
Toshiba Package Name	SOD-962 (SL2)	SOD-323HE (US2H)	S-FLAT
P_D (Max) [W]	0.15	1.2	0.7
V_Z (Typ.) [V]	16	16	16

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Peripheral interface circuits

Examples of peripheral interface signal line protection circuits

TVS diode

Absorbs static electricity (ESD) from external terminals, prevents circuit malfunction, and protects devices.

Part Number	DF2B7ASL	DF2B5M4SL	DF2B6M4SL
Toshiba Package Name	SOD-962 (SL2)	SOD-962 (SL2)	SOD-962 (SL2)
V_ESD (Max) [kV]	+/-30	+/-20	+/-20
I_R (Max) [µA]	0.1	0.1	0.1
R_dyn (Typ.) [Ω]	0.2	0.5	0.5
C_T (Typ.) [pF] @ V_R = 0 [V], f = 1 [MHz]	8.5	0.2	0.2

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Over temperature monitoring circuit

Example of multi-point temperature rise monitoring circuit.

Over temperature detection IC (1)
Over temperature detection IC(2)

TCTH series can detect temperature rise at multiple points on the circuit board.

Part Number	TCTH011AE	TCTH012AE	TCTH021AE	TCTH022AE
Toshiba Package Name	SOT-553 (ESV)	SOT-553 (ESV)	SOT-553 (ESV)	SOT-553 (ESV)
V_DD (Min) [V]	1.7	1.7	1.7	1.7
V_DD (Max) [V]	5.5	5.5	5.5	5.5
I_DD (Typ.) [µA] @ T_j = 25 [°C]	1.8	1.8	11.3	11.3
I_PTCO (Typ.) [µA] @ T_j = 25 [°C]	1	1	10	10
FLAG Signal Output	Push-pull	Push-pull	Push-pull	Push-pull

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TCTH series can detect temperature rise at multiple points on the circuit board.

Part Number	TCTH011BE	TCTH012BE	TCTH021BE	TCTH022BE
Toshiba Package Name	SOT-553 (ESV)	SOT-553 (ESV)	SOT-553 (ESV)	SOT-553 (ESV)
V_DD (Min) [V]	1.7	1.7	1.7	1.7
V_DD (Max) [V]	5.5	5.5	5.5	5.5
I_DD (Typ.) [µA] @ T_j = 25 [°C]	1.8	1.8	11.3	11.3
I_PTCO (Typ.) [µA] @ T_j = 25 [°C]	1	1	10	10
FLAG Signal Output	Open drain	Open drain	Open drain	Open drain

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Fan drive circuit

Example of fan motor drive circuit

Three-phase brushless DC motor driver IC
Semi-power MOSFET

One hall sine wave PWM control driver for three-phase brushless DC motor. It is suitable for controlling server fans.

Part Number	TC78B025FTG	TC78B027FTG	TC78B009FTG
Toshiba Package Name	P-VQFN24-0404-0.50-002	P-VQFN24-0404-0.50-003	P-WQFN36-0505-0.50-001
V_OUT (Max) [V]	18	18	30
I_OUT (Max) [A]	3.5	0.2	0.24
V_M [V]	5.5 to 16	5 to 16	5.5 to 27
R_ON (Typ.) [Ω]	0.2

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Low on-resistance, small and high power dissipation packages contribute to miniaturization and low power consumption of the systems.

Part Number	SSM6K341NU	SSM3K341R
Toshiba Package Name	SOT-1220 (UDFN6B)	SOT-23F
V_DSS (Max) [V]	60	60
I_D (Max) [A]	6.0	6.0
R_DS(ON) (Max) [Ω] @ \|V_GS\| = 4.5 [V]	0.051	0.051
Polarity	N-ch	N-ch

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Reference Design

3-Phase Inverter Using SiC MOSFET

This reference design provides design guide, data and other contents of the 3-phase inverter using 1200 V SiC MOSFET. It drives AC 440V motors.

Details

3kW Power Supply for Servers and Telecoms Using Surface-Mounted SiC MOSFET

In recent years, data centers have been growing larger and becoming more densely packed. As a result, power supplies for servers are now required to be more efficient, more powerful, and more space-saving, making high power density essential. By adopting our latest surface-mounted SiC devices, we have achieved high power density by separating the power supply from the main board and implementing it as a sub-board.
In addition to server applications, this solution can also be applied to telecom systems and other applications that use 48V.
This reference design provides explanations of the design points, usage methods, and adjustment methods of each part of the circuit, as well as design information including circuit diagrams, board patterns, etc. which can be useful for your design.

Details

3kW Power Supply for AI Servers Using Surface-Mounted SiC MOSFET

With the rapid rise of generative AI, demand for high-performance AI servers is growing. This reference design provides a 3kW power supply for AI servers with high power requirements. By incorporating our surface-mount SiC MOSFETs, it achieves high power density.
Design tips on each portion of the circuit, method of operation, and design information such as circuit diagrams and PCB patterns are available, please use them for your design.

Details

1.1kW ITTF(Interleaved Two Transistor Forward) AC-DC Converter for Servers

This design is an AC-DC converter for servers that generates DC 12V from an input of AC 90 to 264V and delivers up to 1.1kW output.
It is equipped with an output ORing circuit, enabling redundant operation.
Components are selected with consideration for height when mounted on a PCB, making it suitable for use in 1U-sized power supplies.
We provide design information including key circuit design points, usage instructions, adjustment methods for each section, circuit diagrams, and PCB layout data to support your development.

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1.6kW LLC Resonant AC-DC Converter for Servers

In order to reduce power consumption in data centers, the bus voltage of servers is increasingly changing to 48V.
This is the AC-DC converter for 48V servers. Equipped with Toshiba's latest generation of power MOSFETs and SiC diodes, it outputs 54.5V DC with high efficiency from 100V to 200V AC input.
This reference design provides explanations of the design points, usage methods, and adjustment methods of each part of the circuit, as well as design information including circuit diagrams, board patterns, etc. which can be useful for your design.

Details

eFuse Application Circuit (with Enhanced Overcurrent Protection)

This reference design provides design guide, data and other contents of eFuse IC Application Circuit (with Enhanced Overcurrent Protection) built on a small board.
This circuit provides precise overcurrent shutdown by combining the eFuse IC and the Thermoflagger^TM used as an overcurrent detection device.

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eFuse Application Circuit (with Thermal Shutdown)

This reference design provides design guide, data and other contents of eFuse IC Application Circuit (with Thermal Shutdown) built on a small board. This circuit provides over temperature detection and protection by combining the eFuse IC and the Thermoflagger^TM (Over Temperature Detection IC).

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48 V Bus Compatible 1.2 V/100 A Double Step-Down DC-DC Converter

In recent years, saving energy in servers has become an urgent issue because of the rapid increase in server power consumption. To resolve the issue, Toshiba has developed this 48V bus compatible DC-DC converter with 1.2V/100A output.
This design is a two-stage DC-DC converter capable of delivering 1.2V/100A to various devices from the 48V bus line. Since each stage uses Toshiba power MOSFETs that have good balance between on-resistance and charge characteristics, it achieves high efficiency.
Design tips on each portion of the circuit, method of operation, and design information such as circuit diagrams and PCB patterns are available, please use them for your design.

Details

1.6 kW Server Power Supply (Upgraded)

Thanks to Toshiba’s latest power devices and digital isolator, this 1U size and 12 V output 1.6 kW server power supply achieves higher efficiency at whole load than the existing reference design which uses the same circuit topology. Design files and guides for circuit design and operation are available as reference design.

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Over Temperature Detection IC Thermoflagger™ Application Circuit (TCTH021AE / Push-pull type)

This reference design provides design guide, data and other contents of Over Temperature Detection IC Thermoflagger™ Application Circuits (TCTH021AE / Push-pull type). In combination with PTC thermistor(s), the Thermoflagger™ can be used to detect over temperature at multiple locations within a device. Details of other application circuits of the Thermoflagger™ are also provided.

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Over Temperature Detection IC Thermoflagger™ Application Circuit (TCTH021BE / Open-drain type)

This reference design provides design guide, data and other contents of Over Temperature Detection IC Thermoflagger™ Application Circuit (TCTH021BE / Open-drain type). In combination with PTC thermistor(s), this Thermoflagger™ can be used to detect over temperature at multiple locations within a device.

Details

1 kW Non-Isolated Buck-Boost DC-DC Converter for Telecommunication Equipment

This reference design provides design guide, data and other contents of 1 kW Non-Isolated Buck-Boost DC-DC Converter for Telecommunication Equipment.

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1.6 kW T-Type 3-Level PFC Power Supply

This reference design provides design guide, data and other contents of 1.6kW AC-DC converter power supply using T-Type 3-Level power factor correction (PFC) circuit.

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100 W LLC DC-DC Converter

This reference design provides design guide, data and other contents of 100 W LLC DC-DC Converter which uses Zero Volt Switching implemented using LLC resonance.

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200 W Active Clamp Forward DC-DC Converter

This reference design provides design guide, data and other contents of 1 kW server power supply using phase shifetd full-bridge DC-DC converter.

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