Product News 2017-11
“TRS2E65F” and “TRS3E65F” are the second generation 650 V Silicon Carbide Schottky Barrier Diodes (SiC SBD). The new products, of which forward direct current rating is 2 A or 3 A, join the lineup of products using the TO-220-2L package.
The second generation products are less likely to break down with their increased peak forward surge current (IFSM) of absolute maximum ratings which is about 1.7 times higher than the first generation product, and feature lower loss with their decreased figure of merit (VF·QC), about 2/3 of the first generation products. They will contribute to making power supplies smaller and more efficient.
Notes:  VF·QC (a product of forward voltage and total capacitive charge) is an index representing the loss performance of a SiC SBD, and the lower the value, the lower the loss of the SiC SBD when compared among products with the same current rating.
|Absolute maximum ratings||Electrical characteristics|
0.1 to 400 V
SiC SBDs are often used in PFC parts in Continuous Current Mode (CCM). When an AC power is applied (for example, when the power is turned on) with Q1 in OFF state, a large current may flow in a diode of the PFC part. IFSM is surge capability in commercial frequencies, and it is important item not to damage the product.
The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.
Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.