Diodes

Toshiba offers an extensive portfolio of diodes, including high-speed, low-loss Schottky-barrier diodes (SBDs) and TVS diodes (ESD protection diodes ) for high-speed signal lines.
Fabricated using silicon carbide (SiC), SiC SBDs provide high breakdown voltage that has never been possible with silicon (Si) SBDs. SiC SBDs are ideal for low-loss, high-efficiency power conversion applications such as server power supplies and solar power conditioners.

Lineup

TVS Diodes (ESD Protection Diodes)
Toshiba offers ESD protection diodes in small packages for protecting various interfaces. Fabricated with unique process technology, our TVS diodes provide high ESD tolerance.
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SiC Schottky Barrier Diodes
Toshiba offers 650-V silicon carbide Schottky barrier diodes (SiC SBDs) with a rated current of 2 A to 10 A.
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Schottky Barrier Diodes
Toshiba offers superior low-VF and low-IR types ranging from general-purpose to power-line products. These can contribute to greater power efficiency and power saving.
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Automotive Diodes
Toshiba has developed an abundant lineup of suitably small and efficient products, such as TVS diodes, rectifiers, Zener diodes, and Schottky barrier diodes, in small and medium-size surface-mount packages.
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Rectifier Diodes
Diodes with reverse voltage ranging from 200 to 1000 V and an average forward current ranging from 0.5 to 3 A are offered in small and medium-size surface-mount packages.
Switching Diodes
Toshiba offers 1-circuit to 4-circuit products, with forward current ranging from 80 to 500 mA, in small surface-mount packages suitable for high-density board assembly.
Zener Diodes
Zener diodes are available in a wide range of Zener voltage specifications extending from 5.6 V to 82 V. Their extensive application fields include both consumer and industrial electronics.
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RF Diodes
Toshiba offers variable capacitance diodes, PIN diodes, switch diodes, and Schottky barrier diodes for high-frequency matching circuits, band switching, RF detection circuits, mixer circuits, etc.
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Cross Reference Search

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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

Technical Articles

Diodes / SiC Schottky Barrier Diodes

Improved JBS structure to reduce the leakage current and increase the surge current capability
The improved JBS structure has been applied to improve the leakage current of the SBD and the surge current capacity.

Diodes / TVS Diodes (ESD Protection Diodes)

ESD tolerance
Toshiba's TVS diodes can be used with peace of mind because they can withstand ESD levels exceeding the highest Level 4 in the IEC61000-4-2.

Diodes / SiC Schottky Barrier Diodes

SiC SBD that achieves low switching losses
By using SiC, a device with high withstand voltage and low switching loss (low reverse recovery charge) has been realized.

Diodes / TVS Diodes (ESD Protection Diodes)

ESD-pulse absorption performance for reducing 1st peak voltage
By including the TVS diode, the 1st peak pulse voltage can be kept low and the ESD withstand can be improved.

Diodes / SiC Schottky Barrier Diodes

High withstand voltage (reverse voltage) characteristics of SiC SBDs
A device with a high breakdown voltage has been realized with dielectric breakdown field strength nearly 10 times higher than that of Si.

Diodes / TVS Diodes (ESD Protection Diodes)

Low dynamic resistance
Low-capacitance TVS diodes have reduced dynamic resistances compared with conventional DF2BxM2 series (EAP-II) TVS diodes.

Documents

Name Date

Technical topics

News / Latest information

25-09-2024

Toshiba’s 1200V Additions to its Lineup of Third-Generation SiC Schottky Barrier Diodes Will Contribute to High Efficiency in Industrial Power Equipment

  • Products/Technology

15-05-2024

Expanded Lineup of Surge Protection Zener Diodes that Support the Quality Improvement of Electronic Equipment by Adding New Voltage Ranks

  • Products/Technology

22-11-2023

400 V Small Size Switching Diode for High-Voltage Circuit

  • Products/Technology

30-08-2023

Launch of 20 Surge-Protection Zener Diode Products that are Suitable for Automotive Equipment

  • Products/Technology

25-07-2022

Zener Diodes for Over Voltage Protection that Use the Ultra-Small SOD-962 Package to Contribute to High-Density Mounting on Equipment

  • Products/Technology

30-06-2022

Fast Recovery Diode Housed in a Press-Pack Package That Helps to Reduce the Size and Power Consumption of Power Converters

  • Products/Technology

17-06-2022

Expanded Lineup of Surge Protection Zener Diodes that Support the Quality Improvement of Electronic Equipment by Adding SOT-23 Package Products

  • Products/Technology

24-02-2022

Toshiba Launches Ultra-Low Capacitance TVS Diode that Protects High-Frequency Antennas of IoT Devices from ESD

  • Products/Technology
  • ESD protection

18-02-2022

Lineup Expansion of Zener Diodes for Power Line Protection Contributing to Improvement of Equipment Reliability

  • Products/Technology

22-01-2021

Lineup expansion of Schottky barrier diodes with 60 V products using the compact US2H package that has excellent heat dissipation allowing easier thermal design : CUHS15F60, CUHS20F60, CUHS15S60, CUHS20S60

  • Products/Technology

18-08-2020

Zener diodes for power line surge protection contributing to improvement of equipment reliability : CEZ series, CUZ series, MUZ series, MSZ series

  • Products/Technology

16-07-2020

Lineup expansion of SiC SBDs of 650 V contributing to high efficiency of power supply PFCs : TRS12N65FB, TRS16N65FB, TRS20N65FB, TRS24N65FB

  • Products/Technology
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