3글자 이상 입력하세요.
About information presented in this cross reference
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
Company about
December 25, 2019
Toshiba Electronic Devices & Storage Corporation
TOKYO— Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two new 100V N-channel power MOSFETs for automotive 48V electrical system applications. The line-up includes the low On-resistance “XPH4R10ANB,” which has a drain current of 70A, and the “XPH6R30ANB,” with a 45A drain current. Mass production shipments start today.
The new products are Toshiba’s first[1] 100V N-channel power MOSFETs in the compact SOP Advance (WF) package for automotive applications. The wettable flank terminal structure of the package allows its automatic visual inspection when mounted on a circuit board, which helps increase reliability. The low On-resistance of the new MOSFETS helps reduce equipment power consumption; and the XPH4R10ANB delivers industry-leading[2] low On-resistance.
(Unless otherwise specified, @Ta=25°C)
Part Number |
Polarity |
Absolute maximum ratings |
Drain-source On-resistance RDS(ON) max (mΩ) |
Channel-to-case thermal impedance Zth(ch-c) max @Tc=25℃ (℃/W) |
Package |
Series |
||||
---|---|---|---|---|---|---|---|---|---|---|
Drain- source voltage VDSS (V) |
Drain current (DC) ID (A) |
Drain current (pulsed) IDP (A) |
Channel temperature Tch (℃) |
@VGS =6V |
@VGS =10V |
|||||
N-channel |
100 |
70 |
210 |
175 |
6.2 |
4.1 |
0.88 |
SOP Advance(WF) |
U-MOSVIII-H |
|
45 |
135 |
9.5 |
6.3 |
1.13 |
U-MOSVIII-H |
Notes:
[1] As of December 25, 2019
[2] Among products with the same rating, as of December 25, 2019. Toshiba survey.
Follow the link below for more on Toshiba Automotive MOSFETs.
*Company names, product names, and service names may be trademarks of their respective companies.
Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.