PCIM 2024

Innovative Solutions For a Sustainable Future

Thank you for visiting us and for checking on Toshiba's latest solutions for e-Mobility, energy and infrastructure and industrial applications. You can catch up on the contents shown at our booth on this page. If you any additional queries, please send us an email or catch up with your related sales contact. The Toshiba team is looking forward meeting you again at the Toshiba booth C3 -119 at electronica in Munich, taking place from November 11th - 15th.

Video introduction

Speakers at PCIM

Improved Reliability of a 2200 V SiC MOSFET Module with an Epoxy-Encapsulated Insulated Metal Substrate

Wednesday, 12 June 2024  |  Hall 10.1   | Poster Session  |  Wide Bandgap Semiconductors

Time slot: 13:00 - 14:30

Speaker: Hiroshi Kono, Toshiba Electronic Devices & Storage Corporation

More details

Toshiba investigated the impact of combining epoxy-potting encapsulation with an insulated metal substrate (IMS) on the performance and reliability of SiC MOSFET modules. Static and dynamic characteristics, thermal resistance, and power cycle tolerance were measured. The optimized copper pattern layout enabled the reduction of conduction loss in the IMS module. In addition, the IMS module showed improved power cycling tolerance compared with the conventional ceramic insulated substrate.

4.5 kV Double-Gate Reverse-Conducting Press-Pack IEGT

Wednesday, 12 June 2024  |  Stage Brüssel 1 |  Power Semiconductors - IGBT

Time slot: 15:10 - 15:30

Speaker: Satoshi Yoshida; Toshiba Electronic Devices & Storage Corporation

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A 4.5 kV double-gate (DG) reverse-conducting (RC) press-pack injection-enhanced gate transistor (PP-IEGT: PPI) was developed. The fabricated DG-RC-PPI was examined under a 2800 V, 2100 A switching condition. By applying gate control, turn-off switching loss and reverse-recovery loss were reduced by 30% and 18%, respectively. As a result, we succeeded in reducing the total switching loss by 16% compared with a conventional single-gate PPI.

Speaker: Satoshi Yoshida recieved the B.S., M.S. and the Ph.D. degree in engineering from the university of Tokyo, Tokyo, Japan, in 2020. He joined Corporate Research and Development Center, Toshiba Corporation, Kanagawa, Japan, in 2020, where he has been working on the research and development of power electronics modules and packages.

Co-Authors: Tatsunori Sakano, Takahiro Kato, Atsushi Yamaoka, Tomoaki Inokuchi, Kazuto Takao Toshiba, JP; Ryohei Gejo, Toshiba Electronic Devices & Storage, JP

Paralleling 3.3-kV/800-A rated SiC-MOSFET Modules – An Optimization Method

Wednesday, 12 June 2024  |  Hall 10.1   | Poster Session  |  Wide Bandgap Semiconductors

Time slot: 13:00 - 14:30

Speaker: Hiroyuki Irifune; Toshiba Electronic Devices & Storage Corporation

More details

We parallel-connected SiC MOS modules with a rating of 3.3 kV/800 A confirmed the effect of the peripheral circuit parameters on the switching operation.The experimental results showed that fluctuation in Vgs could be suppressed by tying the gate wiring. The allowable increase in inductance of the main circuit was determined by simulation. As a result, It is important to design equal stray inductance, in order to align the imbalanced current within the range where turn-off surge is acceptable.

Co-Author: Shinichi Hiroshige, Toshiba Electronic Devices & Storage, JP

Digital-Programable Active Gate Driver IC And Its Advanced Control Method For Power Semiconductor Devices

Thursday, 13 June 2024  |  Hall 7 at booth 7-743 |  Technology Stage

Time slot  13:45 - 14:05

Speaker: Dr. Jenny Feng, Toshiba Europe Limited and Dr. Shusuke Kawai, Toshiba Corporate 

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To unlock the full potential of power semiconductors, active gate drivers offer optimal driving patters, minimizing switching losses and overshoots for enhanced efficiency and EMC performance in various applications.

This presentation introduces a fully integrated digital active gate driver augmented with an artificial neural network for optimization. The on-chip ADC and 2n-sec gate current control enable surge current cancellation under various load current conditions. The programmable capabilities of the active gate driver includes optimizing driving patterns for switching transients and adjusting the short circuit protection feature (DESAT). Digitally tunable DESAT circuitry and adjustment algorithms achieve circuit parameter settings automatically that allow for false-positive short-circuit protection. While the on-chip lookup table ensures easy implementation, contributing to efficient and flexible SiC MOSFET-driven converter designs.

Traction Inverters: Right at the core of the electric vehicle revolution

Wednesday, 12 June 2024  |  Hall 9 -642  |  Exhibitor stage

Time slot: 15:00 - 15:20

Speaker: Shoichiro Kurushima; Senior Manager, Automotive Solutions Application Engineering Department, Semiconductor Application Engineering Center, Toshiba Electronic Devices & Storage Corporation

 

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Vehicle electrification and autonomous driving are creating a once-in-a-century revolution of the automotive market. Traction inverters play an essential role in this process as they convert energy from the car's battery to power the motors in the powertrain. By regulating the speed and torque, they influence the driving behaviour and control the motor. Their weight and size directly affect the vehicle's driving performance, mileage, and reliability and they take into account all the stresses of driving, such as heat and vibration, and handle the challenges of high power and current. Set up correctly, inverters can minimize switching losses, maximize thermal efficiency within cars, and enable regenerative braking to recharge the battery. In our presentation we focus on Toshiba’s solution for traction inverters.  Explaining how our overall automotive solution and product lineup including Wide Band Gap (WBG) semiconductors, MOSFETs, motor drivers, and photocouplers contribute to reducing power consumption and improving the efficiency of inverters.

 

Focus areas

The Benefits of  SiC

Toshiba’s unique ‘SiC Snacks’ concept provides engineers and procurement managers with information on the attributes of Silicon Carbide technology that are going to be most relevant to the projects they are involved in.

Available SiC Snacks:

1.  Switching Capabilities
2.  The RDS(ON) x Qgd figure of merit (FoM) 
3.  Suppressing Body Diode Conduction Effects
4.  Wide VGSS ratings
5.  Advanced packaging with Kelvin source pin  

Download the snack you're interested in, or download them all together.  

SiC MOSFET product details and datasheets

SmartMCDTM

Want to learn more about our new product TB9M003FG ? Have a look at our latest "At the engineer's bench" video.

Passion for Power Solutions

Picture showing semiconducor board and MOSFET circuit

High efficiency power conversion & control

Interested in more power topics? Our Passion for Power Solutions Page ties it neatly up for you, providing indepth information about our latest product & solution portfolio.

Journey of Motor Control

Integrated solutions for Motor Control

Motors drive the world - from industrial pumps and fans to printers and coffee machines. Get familiar with our Brushed, Brushless and Stepper Motors and learn how to make your motor smarter.   

More Power Content

Whitepapers

Find detailed information about the benefits of our MOSFET-portfolio including SiC, HV- and LV-MOSFETs at our innovation centre.
 

High Voltage Laboratory

Toshiba's high voltage laboratory in EMEA allows us to address  application-related questions from customers more rapidly.

Power Focus Interview

Learn more about TEE’s focus on power in our interview* with the magazine Markt & Technik. *Please note that the interview is in German..

Podcast Analog ICs

In the podcast Passion for technology the need for miniaturisation of analog devices is discussed.
 

Discover more

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