Passion for Power Solutions

Passion for Power Solutions

Industrial I Components

3rd generation Silicon Carbide(SiC) MOSFETs

Introduction of 650V and 1200V voltage products

In common with 2nd generations, Toshiba's newest generation of MOSFETs include a built-in SiC Schottky Barrier Diode (SBD) with a low forward voltage (VF) of -1.35V (typ.), placed in parallel with the PN diode in the SiC MOSFETs, to suppress fluctuation in RDS(on) thereby enhancing reliability. Furthermore, Toshiba’s advanced SiC process[1] has greatly improved our on-resistance per unit area RonA, and the performance index Ron*Qgd, which indicates switching characteristics, compared to 2nd generation products. Also, it has easy to design gate drive circuit, and you can prevent malfunctions due to switching noise.

Applications:

Toshiba's 3rd generation SiC MOSFETs provides lower power consumption and supports higher power density for applications such as switching power supplies (servers for data centers, communication equipment), uninterruptible power supplies (UPS), PV inverters, EV charging stations etc.

650V SiC Schottky Barrier Diodes

650V SiC Schottky Barrier Diodes

2nd Generation of devices offer higher current density

With densities up to 50% higher than the first generation, Toshiba's devices and can handle significantly higher forward surge currents.  The use of SiC semiconductors helps designers to improve efficiency, reduce heat dissipation and save space in high-speed power switching designs.  SiC power devices also offer stable operation over a wider temperature range than silicon alternatives – even at high voltages and currents.

Key product:

SiC Schottky barrier diodes

Check for more:

650V SiC Schottky Barrier Diodes

Applications:

  • Power factor correction (PFC) at power supply
  • Photovoltaic inverters
  • Uninterruptible power supplies (UPS)
 Features Advantages Benefits
  • Low leakage current and low VF
  • Low thermal runaway of IR
  • High surge current IFSM
  • Lower switching loss due to thinner wafer
  • Higher efficiency PFC operation
  • Increased thermal margin
  • High operation frequency allow small filter
  • Improved system performance
  • Reduced form factor
  • Reduced cooling requirements
  • Lower system costs

650V SiC Schottky Barrier Diode Line-up

VRRM (V) IF(DC) (A) TO-220F-2L TO-220-2L TO-247
650 2   TRS2E65F  
3   TRS3E65F  
4 TRS4A65F
TRS4E65F  
6 TRS6A65F
TRS6E65F  
8 TRS8A65F
TRS8E65F  
10 TRS10A65F
TRS10E65F    
12 TRS12A65F
TRS12E65F TRS12N65FB    
16     TRS16N65FB    
20     TRS20N65FB    
24     TRS24N65FB    

High Voltage 650V Series Superjunction MOSFETs | DTMOSVI

DTMOSVI 650V Series Superjunction MOSFETs

More efficient switching power supplies

The 650V-rated N-channel power MOSFETs strengthen Toshiba's latest DTMOSVI series with highly appealing performance parameters. These devices offer designers a 40% reduction in terms of their drain-source on-resistance x gate-drain charge (QGD) figure of merit (FoM) when compared to the previous DTMOS generation.  As a consequence, they can raise the efficiency of switch-mode power supplies thereby enabling a substantial decrease in switching losses, compared to the previous generation

Key product:

High Voltage MOSFETS - DTMOSVI Overview

Check for more:

High Voltage MOSFETS Flyer

Applications:

  • Switching power supplies in industrial equipment, data centers and power conditioners of photovoltaic generators 
 Features Advantages Benefits
  • Best in class FoM: R(on)* QGD product
    (-40% vs previous generation DTMOS IV-H)
  • Packages with a Kelvin source pin: TOLL, DFN 8x8, TO247-4
  • Combination of lower conduction and switching losses
  • Higher efficiency switching allows lower heat generation and smaller form factor
  • Smaller form factor can help to reduce costs

High Voltage 650V Series Superjunction MOSFETs Line-up | DTMOS VI

Rds(ON)
maxΩ)

DFN8x8
TO-220SIS
TO-247 TO-247-4L TOLL Qg
(nC)
Typ.
Ciss
(VDS=300V)
(pF)
Typ.

0.19 / 0.21 TK210V65Z TK190A65Z     TK190U65Z 25 1370
0.155 / 0.17 TK170V65Z TK155A65Z     TK155U65Z 29 1635
0.11 / 0.125 TK125V65Z
TK110A65Z TK110N65Z TK110Z65Z

TK110U65Z

40 2250
0.090 / 0.099 TK099V65Z TK090A65Z TK090N65Z TK090Z65Z

TK090U65Z

47 2780
0.065     TK065N65Z TK065Z65Z TK065U65Z 62 3650
0.040     TK040N65Z TK040Z65Z   105 6250

Low-spike-type 40V N-channel Power MOSFET | U-MOS IX-H

U-MOS IX-H Low-spike-type 40V N-channel power MOSFET

Reduction of EMI in switching power supply applications

Utilizing excellent high-speed performance, TPHR7404PU`s small 5 x 6mm SOP Advance package and extraordinary low 0.71°C/W channel-to-case thermal resistance makes the device suitable for efficiency-focused, compact power solutions. Low spike performance MOSFETs will simplify designers job and help to avoid EMI issue.


Key product:

TPHR7404PU

Applications:

  • Power tools
  • DC/DC converter
  • Synchronous rectifier
Features Advantages Benefits
  • Low spike & high efficiency switching
  • Max 0,74Ohm (10V)
  • Increased Gate switching Voltage
  • Less EMI related reworks
  • Low conduction loss
  • Less probability for self turn on
  • Faster time to market
  • Low heat dissipation
  • Simplifying design process

80V Series N-channel Power MOSFETs | U-MOS X-H

U-MOS X-H 80V Series N-channel Power MOSFETs

Devices can significantly enhance power supply efficiency

TPH2R408QM and TPN19008QM are based upon Toshiba's latest generation U-MOSX-H process that exhibit a reduction of around 40% in drain-source on-resistance (Rds(ON)) compared to corresponding 80V products in earlier processes.   

Key product:

TPH2R408QM

TPN19008QM

Applications:

  • Telecom Power supply
  • Industrial Power supply synchronous rectification at 24~28V output Voltage
  • Motor drive Power stage at 36V power Tool
Features Advantages Benefits
  • Lowest Rds(ON) in Form factor available
  • Excellent low FoM Rds(on) x Q(oss) and Rds(on) x Q(sw)
  •  5x6 mm package SOP Adv “N” style for improved compatibility
  • tj: 175°C
  • Low conduction loss
  • High efficiency switching
  • More thermal head room
  • Lower heat generation
  • Smaller space consumption
  • Helps to reduce costs

80V Series N-channel Power MOSFETs Line-up | U-MOS X-H

Part Number Rds (on) Package size
Package name
TPH3R008QM 3 mΩ 4.9 x 6.1 mm SOP Advance (N)
TPH4R008QM 4 mΩ 4.9 x 6.1 mm SOP Advance (N)
TPH6R008QM 6 mΩ 4.9×6.1 mm SOP Advance (N)
TPN12008QM 12 mΩ 3 x 3 mm TSON Advance
TPN19008QM 9 mΩ 3 x 3 mm TSON Advance
TPN8R408QM 8,4 mΩ 3 x 3 mm TSON Advance
TPH8R808QM 8.8 mΩ 4.9×6.1 mm SOP Advance (N)

Improved Power Efficiency by using 150V N-channel MOSFET

Compact intelligent power device (IPD) with 600V rating

New devices are based on Toshiba latest low voltage generation U-MOS X-H process

TPH9R00CQH and TPH9R00CQ5MOSFET have a very low drain-source on-resistance RDS(ON) of just 9.0mΩ (max. @ VGS=10V). This represents a reduction of approximately 42% when compared to the existing 150V product (TPH1500CNH) that is based upon the current generation U-MOSVIII-H process. The new components offers two surface mount (SMD) package options – SOP Advance (5.0mm x 6.0mm) and SOP Advance(N) (4.9mm x 6.1mm) which can be selected to meet the needs of any application.

Key products:

TPH9R00CQH

TPH9R00CQ5

Applications:

High efficiency DC-DC convertor

 Switching voltage regulator

 Motor drives

 Features Advantages Benefits
  • Excellent low RDS(ON)×QSW, RDS(ON)×QOSS
  • Low VDS spike
  • 5×6 mm package SOP Advance (N) style for improved compatibility
  • Tj=175℃
  • Low conduction loss
  • High efficiency switching
  • High EMI performance
  • Lower heat generation
  • Smaller space consumption

Compact intelligent power device (IPD) with 600V rating

Compact intelligent power device (IPD) with 600V rating

Efficient operation reduces power consumption of motor equipment

The TPD4162F is suitable for any applications with input signals in the range up to 220V AC. It contains a PWM circuit, 3-phase decoder, level shifting high-side driver and low side driver with embedded IGBTs and FRDs. Multiple protection features include current limit, over current protection (OCP), thermal shutdown and undervoltage lockout (UVLO).


Key products:

TPD4162F

Applications:

  • Air conditioners
  • Air cleaners
  • Pumps
 Features Advantages Benefits
  • Rated power supply voltage (VBB) up to 450V
  • HSSOP31 surface mount package 17.5 x 11.9mm footprint,  2.2mm height
  • Allows reduction of the power dissipation of the motor equipment
  • Offers approx. 10% reduced power dissipation compared to its predecessor  
  • Reduces need for peripheral circuits
  • Allows for compact designs including the ability to mount the driver circuitry directly to the motor

TPD4162F Block Diagram

TPD4162F Block Diagram

Smart Gatedriver Family to control (SiC) MOSFETs and IGBTs

Smart Gate Driver - Dual output IGBT / MOSFET driver

Sophisticated devices incorporate numerous protection functions

Controling  IGBTs as well (SiC) MOSFETs these smart gate drivers are suitable  fora wide range of applications including inverters, AC servo drives, photovoltaic (PV) inverters and uninterruptible power supplies (UPSs). They incorporate protection functions such as MOSFET and IGBT desaturation detection, active Miller clamp, U(VLO) and FAULT output, eliminating the need for several external circuits. This reduces system costs for fault detection and protection and saves space on the board and minimizes design effort. Drive strengths from +/-2.5A up to +/-4A can be supported at a wide output voltage range from 15V to 30V with low propagation delay.

Applications

  • Industrial inverters
  • Uninterruptible power supplies (UPS)
  • Power conditioners for solar energy
  • Power conditioners for motor controls

Check for more:

Gate Driver Flyer    Smart Gate driver (press release)

 Features Advantages Benefits
  • Smart Gate Drivers with built-in protection circuits
  • Single and Dual output driver available
  • Peak output current range from +/- 2.5 A  up to +/- 4 A
  • Can drive P-channel and N-channel MOSFETs
  • Only simple external protection circuit needed
  • Reduction of required components
  • Reduction of board space and more compact designs
  • Simplifies design tasks
  • SO16L package with high isolation performance for safety critical applications

Smart Gate Driver Graphics

Gate driver design requirement changes based on different system power ratings. TLP5231 can drive a wide range of low and high power ratings by only changing the buffer stage of MOSFETs which maximizes gate drive design scalability.
Gate driver design requirement changes based on different system power ratings. TLP5231 can drive a wide range of low and high power ratings by only changing the buffer stage of MOSFETs which maximizes gate drive design scalability.
TLP5231 provides a double output drive for individual outputs of the high and low side of the buffer MOSFETs. A MOSFET buffer provides rail to rail output and internal turn-on resistance, RDSON when delivering higher current bringing significant lower power reduction when compared to the bipolar buffer.
TLP5231 provides a double output drive for individual outputs of the high and low side of the buffer MOSFETs. A MOSFET buffer provides rail to rail output and internal turn-on resistance, RDSON when delivering higher current bringing significant lower power reduction when compared to the bipolar buffer.

New High Peak Output Current Photocouplers

New High Peak Output Current Photocouplers

Ultra-thin SO6L package offers easy upgrade path to reduce height in designs

The use of the new photocouplers TLP5702H and TLP5705H can help simplifying designs, reducing part count and enabling miniaturisation. Whilst TLP5705H is Toshiba’s first product to deliver a peak output current rating of ±5.0A, the TLP5702H has a peak output current rating of ±2.5A.  With a  footprint of just 10.0mm x 3.84mm the ultra-thin SO6L package can be mounted on the PCB land pattern of a conventional SDIP6 package, facilitating an easy upgrade path for Toshiba’s current photocouplers, such as the TLP700H. The rugged devices are ideally suited to applications in industrial equipment. 

Key product:

TLP5705H

TLP5702H

 

Applications:

  • Industrial Inverters
  • PV Inverter
  • AC Servo Drives, UPS
 Features Advantages Benefits
  • High Peak Output Current of +/- 5A for TLP5705H and +/- 2,5A for TLP5702H
  • Compact and thin SO6L package with max. height of 2.3mm
  • High operating temperature range Top = -40 to +125°C
  • Direct drive of small to medium capacity inverters without need of buffer circuit
  • Reduced board space, can be mounted on backside of PCB
  • Easy to design for harsh environment applications
  • Reduction of required components
  • Reduction of board space and more compact designs

High-Speed Photo-IC Coupler

High-Speed IC Coupler TLP2363
High-Speed IC Coupler TLP2363

10Mbps logic output photocoupler for PLCs

The new TLP2363 is rated for a wide operating temperature range (-40 to +105°C). The threshold input current (IFHL) is specified with min. 0.3mA and max. 2.4mA thereby ensuring conformance to the digital input standard IEC 61131-2 type 1. Uniquely for this type of device, all that is required to complete the design is a bridge diode and a suitable resistor for current control. The short propagation delay of just 80ns is ideal for use with high-speed systems.

Key product:

TLP2363

Applications:

  • 24V digital input programmable logic controller (PLC)
  • Measurement and control equipment
 Features Advantages Benefits
  • Adheres to IEC 61131-2 specification
  • High immunity to slow input
  • Guaranteed min. and max. threshold input current
  • Easy to design PLC with few additional components
  • Good match for digital interface of PLC
  • Makes design fast and easy
  • Small package for compact designs

High Speed IC Coupler Circuit Diagram

Graphic related to TLP2363 Hich-Speed-IC

  

  

  

  

 

  • Compliance with IEC61131-2 standard for PLC digital input modules (type 1) by combination with 2 resistors
  • Guaranteed minimum and maximum threshold input current at whole range of operating temperature
  • High immunity to slow input for both LED side and detector side to contribute to the gradual shut-down/start up test for PLC

 

Isolators/Solid State Relays - Photorelays

Optical Semiconductor Devices - Photorelays

Improve safety, cut power consumption and reduce the size of end products

Photorelays are a type of photocoupler consisting of an LED optically coupled with a MOSFET. They offer many advantages over mechanical relays such as long operational life, low-current drive and fast response. Widely used for contact switching in various industrial applications, Toshiba photorelays provide low RON, low COFF devices in various packages featuring high current and high off-state voltage.

Applications:

  • Factory automation
  • Programmable Logic Controllers
  • Security systems
  • Measurement equipment
  • Heating ventilation and air conditioning
  • Battery management systems
  • Automatic test equipment
  • Smart meters
 Features Advantages Benefits
  • No mechanical contacts, no wear and tear
  • No contact bounce
  • Leading edge technology for best technical performance
  • Drive directly from MCU
  • Large package variety including smallest S-VSON package
  • Wide range of photorelays with extended temperature range from -40°C up to +110°C
  • Optical isolation with guaranteed internal galvanic isolation
  • No wear and tear induced degradation
  • Clear output signal
  • Devices offer highest currents and fastest switching
  • Improved system efficiency, lowest power consumption
  • Suitable photorelay for each application and available space
  • Products are flexible applicable in harsh industrial environments
  • Provides best in class Isolation
  • Maintenance free
  • Fewer field failures due to higher product reliability and lifetime
  • Less EMI considerations
  • No filtering effort
  • Smaller footprint compared with mechanical relays
  • High speed switching
  • No operational noise
  • Less power consumption
  • Simple design for best performance

Industrial I Solutions

Brushed Motor Driver - Lowest standby power consumption

Ultra-low standby current consumption

  • Only 1µA standby current
  • Wide operating voltage range down to 4.5V
  • Enables multi-product sourcing strategies due to industry standard   package and pinout

Key products:  TB67H450AFNG  TB67H451AFNG

MIKROE ClickboardTM TB67H450AFNG    

MIKROE ClickboardTM TB67H451AFNG   

Check for more: Download TB67H450FNG press release (Predecessor)

Product portfolio Brushed DC Motor Drivers 

 Features Advantages Benefits
  • Automatically controlled isolated voltage regulator
  • Wide operating voltage range
  • Industry standard package and pinout
  • Ultra-low standby current of only 1µA
  • Automatic control of standby mode
  • Can operate at only 4.5V
  • Existing boards and circuits may be reused
  • Extended battery lifetime
  • Less development effort and cost
  • Usable for USB powered devices
  • Allows multi-product sourcing strategies

Brushless DC Motor Control

Constant rotational speed via closed-loop speed control

  • Fast regulation of speed fluctuations caused by changes in power supply voltage and torque load
  • No external MCU required due to embedded non-volatile memory
  • No speed control software development required
  • Intelligent Phase Control detects the motor current phase and feeds back the information for auto lead angle control (see video)

Key products:

TC78B025FTG  MIKROE ClickboardTM TC78B025FTG

TC78B027FTG  MIKROE ClickboardTM TC78B027FTG

 Features Advantages Benefits
  • Closed-loop speed control
  • Embedded non-volatile memory
  • Automatic lead angle optimization
  • Support for 1 and 3 hall sensor motors
  • Integrated or external power stage
  • Uniform rotation speeds up to tens of thousands RPM
  • No development of control software required
  • No external MCU required
  • Reduces current consumption by up to 20% across the entire speed range
  • Only initial lead angle optimization necessary
  • Scalable power stage
  • Ideal for mission critical applications that i.e. require a constant cooling performance
  • Reduced development time and cost
  • Reduced Bill-of-Material
  • Eco-friendly
  • Faster Time-to-Market

Stepper Motor Control

Precice and efficient control of linear motion systems

  • High accuracy and low noise by 128 micro step mode
  • High flexibility by SPI control, 1024 mico steps option
  • Highest efficiency by low RDS(ON), 0.48 Ohm and 0.1uA standby current

Key product:

TB67S128FTG

MIKROE ClickboardTM TB67S128FTG

TC78H670FTG

MIKROE ClickboardTM TC78H670FTG

 Features Advantages Benefits
  • 128 µSteps
  • Active Gain Control (AGC)*1
  • Advanced Dynamic Mixed Decay (ADMD)*2
  • Ultra-silent operation
  • Less vibrations
  • Very high energy efficiency
  • Reduced heat generation
  • Prevention of step loss and stall
  • High rotational speeds
  • No shunt resistors required
  • High accuracy of current measurement
  • Enhanced user experience
  • Reduced energy cost
  • Eco-friendly
  • Longer lifetime of motor
  • Less cooling cost and effort
  • High reliability
  • Enables new use cases
  • Reduction in Bill-of-Material     

*1) Active Gain Control optimizes the drive current to suit  the required torque. It´s a Toshiba technology that prevents stalls and realizes power savings.
*2) Advanced Dynamic Mixed Decay automatically optimizes switching control of fast decay and slow decay modes to secure high speed rotation. It´s a Toshiba original mixed decay technology.

Videos about Active Gain Control

Cordless Power Tool Reference Design

Power Tool Reference Model
Power Tool Reference Model

Compact, efficient and flexible control for Brushless DC (BLDC) motor based power tools

The reference design combines Toshiba’s highly efficient low-voltage MOSFET devices with Toshiba’s dedicated motor control MCU and thus provides a very compact but flexible platform for the control and drive of BLDC motors in power tools. The Motor current is generated by a 3-phase inverter with 200W output power stage using the Toshiba TPH1R204PB low-voltage MOSFET. This device features industry-leading RDS(ON) in a 5×6mm SOP Advanced package and provides low spike generation helping to prevent EMI effects. 

Main PCB
•    Compact form factor (60 x 50 mm)
•    3-phase inverter, 200W output stage
•    Speed control switch
•    Pilot lamp

* sofware currently under development

Key products:

TPH1R204PB High Efficient LV MOSFET

TC75W58FK Comparator

 

Features Advantages Benefits
  • 12 to 24 V input voltage
  • 200 W output power
  • ±20A average current
  • ±60A maximum peak current
  • U-MOS IX-H series MOSFET TPH1R204PB for the output stage
  • Arm® Cortex®-M4K based MCU for BLDC motor control supporting square wave, sine wave and sensorless Field Oriented Control (FOC)*
  • 3-shunt current measurement with over current detection circuit
  • Self-Power Off Circuit
  • Hall sensor Interface
  • Compact high power density design
  • Flexible platform: sensor or sensorless motor control*
  • Sensorless speed / torque control by Field Oriented Control (FOC) and advanced LSSL software algorithm*
  • Low spike TPH1R204PB device with low conduction, output charge and switching losses
  • System cost saving due to sensorless control*
  • Higher efficiency, lower power consumption leads to longer operation time
  • Quiet and smooth operation
  • Fast prototyping, proof of concept, shorter development times

* optional support

Board picture & block diagram

Picture from 60 x 50 mm main PCB
60 x 50 mm main PCB
Picture of blockdiagram of Power tool reference model
Blockdiagram of Power tool reference model
Picture of Switching wavefrom graphic
Switching wavefrom graphic
Picture of TPH1R204PB Low Spike Feature
TPH1R204PB Low Spike Feature
Picture of Block diagram MCU
Sensorless Speed Control by Field Oriented Control (FOC)* and advanced software algorithm supported by built-in Vector Engine

* Optional support

Automatic Guided Vehicle Reference Model (AGV)

Inverter for 3-phase motor drive and MCU for BLDC servo motor control

  • Inverter for three 3-phase brushless DC motors, up to 750W each
  • AGV moving with three omni wheels of 203mm diameter
  • Line tracing through infrared sensor system

Key products:

TMPM4MNFYAFG 160MHz Motor MCU

Low-Voltage TPH2R408QM MOSFET | U-MOS X-H

Toshiba SCiBTM   battery

 Features Advantages Benefits
  • Ultra low on-resistance MOSFET
  • MCU with built-in accelerators for Field-oriented-Control (FoC)
  • Low drive losses (Rds(ON) × Qg) & switching losses (Rds(ON) × QSW)
  • Control of three 3-phase BLDC motors with hall sensor, resolver or rotary encoder 
  • High efficient and energy saving inverter
  • High precision servo motor control, 3 channel by single MCU    

Picture of reference board

Automatic Guided Vehicle - Picture of board

Servo Drive Reference Model for Multi-Channel Motor Control

Robot ARM as demo system

  • Robot arm movement by single MCU controlling 3 motors
  • Inverter drives 3-phase BLDC motors, 200W power stage

Key products:

TMPM4KNFYADFG Motor MCU (160MHz)

MIKROE ClickerTM 4 MCU board

Low-Voltage TPW3R70APL MOSFET | U-MOS IX 

M4K Motor Control MCU Series

TLP2370 coupler  TCR3DM33 LDO  TC7QPB9307FK level shifter

 Features Advantages Benefits
  • MCU with built-in Vector Engine (VE), PWM, ADC and Encoder interface
  • Ultra low Rds(ON) of just 3.7mΩ
  • Vector control of up to 3 BLDC servo motors by a single MCU
  • Flexible and modular platform
  • High efficient & precise motor control solution with a quick start to the implementation of advanced servo motor control system       

Automotive I Components

Compact N-channel MOSFETs with 3.3x3.6mm package

Compact N-channel MOSFETs with 3.3x3.6mm package

Package that contributes to the miniaturization of ECU

Highly efficient and compact devices in TSON Advance (WF) package for the first time, which ensure that board utilization is kept to a minimum.

Key products:

XPN3R804NC

XPN7R104NC

XPN12006NC

XPN6R706NC

Check for more:

Automotive MOSFETs Product Overview

Compact MOSFET press release

Applications:

  • Automotive equipment applications such as  switching regulators, DC-DC converters and motor drivers.
 Features Advantages Benefits
  • VDSS of 40V and 60V N-channel
  • Latest U-MOS process technology
  • Small and surface-mount package 3.3x3.6mm(typ)
  • AEC-Q101 qualified, PPAP capable
  • TSON Advance wettable flanks package allows optical inspection of solder joints
  • Max. operating temperature of 175ºC suitable for automotive needs 
  • Total power losses can be significantly reduced
  • Use less MOSFETs when parallel connection for superior performance
  • Smaller, more compact designs could be achieved

100V process technology MOSFETs

100V MOSFETs

New device is the first to be produced in Toshiba’s new U-MOS X-H series

Withstanding a drain-source voltage (VDSS) of 100V the new XK1R9F10QB is rated for a continuous drain current (ID) of 160A, or 480A if pulsed (IDP) and can be operated with a channel temperature of 175°C.

Key products:

XK1R9F10QB  

Check for more:

Automotive MOSFETs Product Overview

XK1R9F10Q press release

Applications:

  • Automotive equipment applications such as load switches, switching power supplies and driving of motors
 Features Advantages Benefits
  • U-MOS series of 100V N-channel
  • Rds(on)max of just 1.92mΩ
  • AEC-Q101 qualified
  • VDSS of 100V suitable for 48V system applications
  • Narrow Vth for easy parallel connection
  • Gull-wing package for stress relief and good reliability
  • Total power losses can be significantly reduced
  • Use less MOSFETs when parallel connection for superior performance
  •  Smaller, more compact designs could be achieved

100V N-channel MOSFETs with 5x6mm package

100V N-channel MOSFETs

Highly efficient devices in SOP Advance (WF) package for the first time

Designed specifically for modern 48V system applications, the devices are suited to use in boost converters for integrated starter generators (ISG) and LED headlights as well as motor drives, switching regulators and load switches. They are available in a small surface mount SOP Advance wettable flanks package.

Key products:

XPH4R10ANB Power MOSFET (N-ch single 60V<VDSS≤150V)

XPH6R30ANB Power MOSFET (N-ch single 60V<VDSS≤150V)

Applications:

  • Automotive equipment
  • Power supply (DC/DC converter) and LED headlights, etc. (motor drives, switching regulators and load switches)
 Features Advantages Benefits
  • U-MOS series of 100V N-channel
  • SOP Advance(WF) 5x6mm package
  • Rds(on)max of just 4.1 mΩ
  • AEC-Q101 qualified
  • VDSS of 100V suitable for 48V system applications
  • Narrow Vth for easy parallel connection
  • Wettable flanks package allows optical inspection of solder joints
  • Total power losses can be significantly reduced
  • Use less MOSFETs when parallel connection for superior performance
  •   Smaller, more compact designs could be achieved

Low Voltage MOSFET with smaller packages

100V N-channel MOSFETs on Automotive bakcground.

Higher density and less power losses

These devices meet the increasing need of the industry for smaller, efficient MOSFETs. They are part of Toshiba`s smaller package portfolio which offer a wide choice of package sizes ranging from 1x1 mm-class ultra-small packages to 3x3 mm, which contributes to miniaturization of sets by reducing the mounting area and increasing power density. By combining latest wafer processes with low-resistance packaging technologies, an industry-leading level of low on-resistance MOSFET is achieved.

Applications:

  • Motor drives
  • DC-DC converter
  • Switching regulator for automotive
 Features Advantages Benefits
  • U-MOS series of 100V N-channel
  • SOP Advance(WF) 5x6mm package
  • Rds(on)max of just 4.1 mΩ
  • AEC-Q101 qualified
  • VDSS of 100V suitable for 48V system applications
  • VDSS of 60V suitable for 24V system applications
  • Narrow Vth for easy parallel connection
  • Wettable flanks package allows optical inspection of solder joints
  • Total power losses can be significantly reduced
  • Use less MOSFETs when parallel connection for superior performance
  •   Smaller, more compact designs could be achieved

Automotive I Solutions

SiC MOSFET Reference Designs

Picture showing EV charing of car

Power Factor Correction Circuit for 3-phase 400V AC Input, suitable for EV charging stations and photovoltaic inverters

Picture showing DC-DC power supply environment

An isolated bidirectional DC-DC power supply, suitable for EV charging stations and photovoltaic inverters

Stepper Motor Driver - Head-up Display Mirror Control

Head-up-Display Motor Control Demo
Head-up-Display Motor Control Demo

Stepping motor driving IC

  • A projector emits Head-up Display typical information content
  • The light-beam is reflected to an upwards oriented screen
  • A stepper motor controlled mirror moves the content up/downcontrol)

Key product:

TB9120AFTG

Check for more:

Press release TB9120AFTG

Stepper Motor Driver Flyer

 Features Advantages Benefits
  • Generates up to 32 micro steps
  • Supplies 1A output power
  • Provides stall detection function
  • Low ON resistance (0,7Ohm)
  • No external voltage regulator needed
  • Supports high operating temperature up to 125°C
  • Good heat dissipation
  • Silent motor operation and precise positioning
  • Low Bill of Material cost
  • Easy thermal design

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