Passion for Power Solutions

In common with 2nd generations, Toshiba's newest generation of MOSFETs include a built-in SiC Schottky Barrier Diode (SBD) with a low forward voltage (VF) of -1.35V (typ.), placed in parallel with the PN diode in the SiC MOSFETs, to suppress fluctuation in R_DS(on) thereby enhancing reliability. Furthermore, Toshiba’s advanced SiC process[1] has greatly improved our on-resistance per unit area RonA, and the performance index R_on*Q_gd, which indicates switching characteristics, compared to 2nd generation products. Also, it has easy to design gate drive circuit, and you can prevent malfunctions due to switching noise.

With densities up to 50% higher than the first generation, Toshiba's devices and can handle significantly higher forward surge currents.  The use of SiC semiconductors helps designers to improve efficiency, reduce heat dissipation and save space in high-speed power switching designs.  SiC power devices also offer stable operation over a wider temperature range than silicon alternatives – even at high voltages and currents.

Key product:

SiC Schottky barrier diodes

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The 650V-rated N-channel power MOSFETs strengthen Toshiba's latest DTMOSVI series with highly appealing performance parameters. These devices offer designers a 40% reduction in terms of their drain-source on-resistance x gate-drain charge (Q_GD) figure of merit (FoM) when compared to the previous DTMOS generation.  As a consequence, they can raise the efficiency of switch-mode power supplies thereby enabling a substantial decrease in switching losses, compared to the previous generation

Key product:

High Voltage MOSFETS - DTMOSVI Overview

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High Voltage MOSFETS Flyer

Applications:

• Switching power supplies in industrial equipment, data centers and power conditioners of photovoltaic generators 

Utilizing excellent high-speed performance, TPHR7404PU`s small 5 x 6mm SOP Advance package and extraordinary low 0.71°C/W channel-to-case thermal resistance makes the device suitable for efficiency-focused, compact power solutions. Low spike performance MOSFETs will simplify designers job and help to avoid EMI issue.

Key product:

TPHR7404PU

TPH2R408QM and TPN19008QM are based upon Toshiba's latest generation U-MOSX-H process that exhibit a reduction of around 40% in drain-source on-resistance (Rds(ON)) compared to corresponding 80V products in earlier processes.   

TPH9R00CQH and TPH9R00CQ5MOSFET have a very low drain-source on-resistance RDS(ON) of just 9.0mΩ (max. @ VGS=10V). This represents a reduction of approximately 42% when compared to the existing 150V product (TPH1500CNH) that is based upon the current generation U-MOSVIII-H process. The new components offers two surface mount (SMD) package options – SOP Advance (5.0mm x 6.0mm) and SOP Advance(N) (4.9mm x 6.1mm) which can be selected to meet the needs of any application.

The TPD4162F is suitable for any applications with input signals in the range up to 220V AC. It contains a PWM circuit, 3-phase decoder, level shifting high-side driver and low side driver with embedded IGBTs and FRDs. Multiple protection features include current limit, over current protection (OCP), thermal shutdown and undervoltage lockout (UVLO).

Key products:

TPD4162F

Controling  IGBTs as well (SiC) MOSFETs these smart gate drivers are suitable  fora wide range of applications including inverters, AC servo drives, photovoltaic (PV) inverters and uninterruptible power supplies (UPSs). They incorporate protection functions such as MOSFET and IGBT desaturation detection, active Miller clamp, U_(VLO) and FAULT output, eliminating the need for several external circuits. This reduces system costs for fault detection and protection and saves space on the board and minimizes design effort. Drive strengths from +/-2.5A up to +/-4A can be supported at a wide output voltage range from 15V to 30V with low propagation delay.

The use of the new photocouplers TLP5702H and TLP5705H can help simplifying designs, reducing part count and enabling miniaturisation. Whilst TLP5705H is Toshiba’s first product to deliver a peak output current rating of ±5.0A, the TLP5702H has a peak output current rating of ±2.5A.  With a  footprint of just 10.0mm x 3.84mm the ultra-thin SO6L package can be mounted on the PCB land pattern of a conventional SDIP6 package, facilitating an easy upgrade path for Toshiba’s current photocouplers, such as the TLP700H. The rugged devices are ideally suited to applications in industrial equipment. 

The new TLP2363 is rated for a wide operating temperature range (-40 to +105°C). The threshold input current (IFHL) is specified with min. 0.3mA and max. 2.4mA thereby ensuring conformance to the digital input standard IEC 61131-2 type 1. Uniquely for this type of device, all that is required to complete the design is a bridge diode and a suitable resistor for current control. The short propagation delay of just 80ns is ideal for use with high-speed systems.

Key product:

TLP2363

Photorelays are a type of photocoupler consisting of an LED optically coupled with a MOSFET. They offer many advantages over mechanical relays such as long operational life, low-current drive and fast response. Widely used for contact switching in various industrial applications, Toshiba photorelays provide low RON, low COFF devices in various packages featuring high current and high off-state voltage.

• Only 1µA standby current
• Wide operating voltage range down to 4.5V
• Enables multi-product sourcing strategies due to industry standard   package and pinout

Key products:  TB67H450AFNG  TB67H451AFNG

MIKROE Clickboard^TM TB67H450AFNG    

MIKROE Clickboard^TM TB67H451AFNG   

Check for more: Download TB67H450FNG press release (Predecessor)

Product portfolio Brushed DC Motor Drivers 

• Fast regulation of speed fluctuations caused by changes in power supply voltage and torque load
• No external MCU required due to embedded non-volatile memory
• No speed control software development required
• Intelligent Phase Control detects the motor current phase and feeds back the information for auto lead angle control (see video)

Key products:

TC78B025FTG  MIKROE Clickboard^TM TC78B025FTG

TC78B027FTG  MIKROE Clickboard^TM TC78B027FTG

• High accuracy and low noise by 128 micro step mode
  
• High flexibility by SPI control, 1024 mico steps option
  
• Highest efficiency by low R_DS(ON), 0.48 Ohm and 0.1uA standby current

Key product:

TB67S128FTG

MIKROE Clickboard^TM TB67S128FTG

TC78H670FTG

MIKROE Clickboard^TM TC78H670FTG

The reference design combines Toshiba’s highly efficient low-voltage MOSFET devices with Toshiba’s dedicated motor control MCU and thus provides a very compact but flexible platform for the control and drive of BLDC motors in power tools. The Motor current is generated by a 3-phase inverter with 200W output power stage using the Toshiba TPH1R204PB low-voltage MOSFET. This device features industry-leading R_DS(ON) in a 5×6mm SOP Advanced package and provides low spike generation helping to prevent EMI effects. 

• Inverter for three 3-phase brushless DC motors, up to 750W each
• AGV moving with three omni wheels of 203mm diameter
• Line tracing through infrared sensor system
  

Key products:

TMPM4MNFYAFG 160MHz Motor MCU

Low-Voltage TPH2R408QM MOSFET | U-MOS X-H

Toshiba SCiB^TM   battery

• Robot arm movement by single MCU controlling 3 motors
• Inverter drives 3-phase BLDC motors, 200W power stage

Key products:

TMPM4KNFYADFG Motor MCU (160MHz)

MIKROE Clicker^TM 4 MCU board

Low-Voltage TPW3R70APL MOSFET | U-MOS IX 

M4K Motor Control MCU Series

TLP2370 coupler  TCR3DM33 LDO  TC7QPB9307FK level shifter

Highly efficient and compact devices in TSON Advance (WF) package for the first time, which ensure that board utilization is kept to a minimum.

Key products:

XPN3R804NC

XPN7R104NC

XPN12006NC

XPN6R706NC

Check for more:

Automotive MOSFETs Product Overview

Compact MOSFET press release

Applications:

• Automotive equipment applications such as  switching regulators, DC-DC converters and motor drivers.

Withstanding a drain-source voltage (V_DSS) of 100V the new XK1R9F10QB is rated for a continuous drain current (I_D) of 160A, or 480A if pulsed (I_DP) and can be operated with a channel temperature of 175°C.

Key products:

XK1R9F10QB  

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Automotive MOSFETs Product Overview

XK1R9F10Q press release

Applications:

• Automotive equipment applications such as load switches, switching power supplies and driving of motors

Designed specifically for modern 48V system applications, the devices are suited to use in boost converters for integrated starter generators (ISG) and LED headlights as well as motor drives, switching regulators and load switches. They are available in a small surface mount SOP Advance wettable flanks package.

Key products:

XPH4R10ANB Power MOSFET (N-ch single 60V<VDSS≤150V)

XPH6R30ANB Power MOSFET (N-ch single 60V<VDSS≤150V)

These devices meet the increasing need of the industry for smaller, efficient MOSFETs. They are part of Toshiba`s smaller package portfolio which offer a wide choice of package sizes ranging from 1x1 mm-class ultra-small packages to 3x3 mm, which contributes to miniaturization of sets by reducing the mounting area and increasing power density. By combining latest wafer processes with low-resistance packaging technologies, an industry-leading level of low on-resistance MOSFET is achieved.

• A projector emits Head-up Display typical information content
• The light-beam is reflected to an upwards oriented screen
• A stepper motor controlled mirror moves the content up/downcontrol)

Key product:

TB9120AFTG

Check for more:

Press release TB9120AFTG

Stepper Motor Driver Flyer