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A TVS diode suitable for ESD protection of a low voltage signal line: DF2B5SL

Product News 2018-07

The package photograph of a TVS diode suitable for ESD protection of a low voltage signal line: DF2B5SL.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched "DF2B5SL", a TVS diode (ESD protection diode) of the standard type which set the maximum reverse stand-off voltage to 3.3 V.
Mobile devices such as smartphones and tablets tend to lower their system voltages to reduce power consumption. Because of this, signal voltages are becoming lower. By selecting a TVS diode suitable for the signal voltage, excessive voltage to ICs in subsequent stages can be suppressed to prevent them from being destroyed.
Featuring a maximum reverse stand-off voltage of 3.3 V, which is lower than that of the existing product[1], the new product DF2B5SL is suitable for ESD protection of low voltage signal lines. It also has a low clamping voltage, allowing the impact on circuits in subsequent stages to be suppressed.
The new product uses the small SOD-962 package (Toshiba’s package name: SL2). It can reduce the mounting area on a board, allowing it to be used for various applications.

Notes:
[1] Existing product DF2B7SL: Maximum reverse stand-off voltage 5.3 V

Features

  • Reverse stand-off voltage: VRWM=3.3 V (max)
  • High electrostatic discharge voltage rating[2]: VESD= ±17 kV
  • Low clamping voltage[3]: VC=9.5 V (typ.) @IPP=5.5 A

Notes:
[2] @IEC61000-4-2 (Contact discharge)
[3] @IEC61000-4-5 8/20 μs pulse

Applications

  • Smart phones
  • Tablets
  • Game devices, etc.

Product Specifications

(@Ta=25 °C)

Part
number
Package Absolute
maximum ratings
Reverse
stand-off
voltage
VRWM
max
(V)
Reverse
breakdown
voltage
VBR
min/max
@IBR=1 mA
(V)
Clamping
voltage
VC[3]
typ.
@IPP
=5.5 A
(V)
Dynamic
resistance
RDYN[4]
typ.
@IPP1=8 A
to IPP2=16 A
(Ω)
Total
capacitance
Ct
typ.
@VR=0 V
(pF)
Name Size
typ.
(mm)
Electrostatic
discharge
voltage
VESD[2]
(kV)
Peak
pulse
current
IPP
(A)
DF2B5SL SOD-962
(SL2)
0.62×0.32×0.3 ±17 5.5 3.3 3.6 / 6.5 9.5 0.25 7.2

Notes:
[4] @TLP parameters: Z0=50 Ω, tp=100 ns, tr=300 ps, averaging window t1=30 ns to t2=60 ns

Equivalent Circuit

The illustration of equivalent circuit of a TVS diode suitable for ESD protection of a low voltage signal line: DF2B5SL.

Application Circuit Example

The illustration of application circuit example of a TVS diode suitable for ESD protection of a low voltage signal line: DF2B5SL.

The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.

Characteristic Curves (Reference)

The illustration of characteristic curves of a TVS diode suitable for ESD protection of a low voltage signal line: DF2B5SL.

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.