Expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TK2R4E08QM, TK3R3E08QM, TK5R3E08QM, TK7R0E08QM, TK2R4A08QM, TK3R2A08QM, TK5R1A08QM, TK6R8A08QM, TK5R1P08QM, TK6R9P08QM
Product News 2021-03
Toshiba Electronic Devices & Storage Corporation ("Toshiba”) has launched 10 products in its lineup of new generation 80 V N-channel power MOSFET “U-MOSⅩ-H series” suitable for switching power supplies of industrial equipment. Three package types are available: “TK2R4E08QM, TK3R3E08QM, TK5R3E08QM and TK7R0E08QM” using TO-220, a through-hole type; “TK2R4A08QM, TK3R2A08QM, TK5R1A08QM and TK6R8A08QM” using TO-220SIS, an isolated through-hole type; and “TK5R1P08QM and TK6R9P08QM” using DPAK, a surface mount type.
By adopting the new generation U-MOSⅩ-H process with a low-voltage trench structure, the new products feature industry-leading[1] low drain-source On-resistance. This reduces conduction loss, helping reduce the power consumption of equipment. In addition, they have inherited the low gate switch charge characteristics from the existing generation process U-MOSVIII-H. This reduces the values of drain-source On-resistance x gate switch charge[2], a figure of merit for switching applications.
Notes:
[1] Among products with the same rating, as of February, 2021. Toshiba survey.
[2] Compared with TK100E08N1 (U-MOSVIII-H series), TK2R4E08QM has reduced its "typical drain-source On-resistance × typical gate switch charge" by about 8 %.
Features
- Industry’s lowest level[1] On-resistance :
RDS(ON)=2.44 mΩ (max) ＠VGS=10 V (TK2R4E08QM) - Low charge (output and gate switch)
- Low gate voltage drive (6 V drive)
Applications
- Switching power supplies for industrial equipment
(High efficiency AC-DC converters, high efficiency DC-DC converters, etc.) - Motor control equipment (Motor drivers, etc.)
Product Specifications
(Unless otherwise specified, @Ta=25 °C)
| Part number |
Absolute maximum ratings |
Drain-source On-resistance RDS(ON) max (mΩ) |
Total gate charge Qg typ. (nC) |
Gate switch charge QSW typ. (nC) |
Output charge Qoss typ. (nC) |
Input capacitance Ciss typ. (pF) |
Packages | ||
|---|---|---|---|---|---|---|---|---|---|
| Drain- source voltage VDSS (V) |
Drain current (DC) ID (A) |
||||||||
| @Tc= 25 °C |
@VGS= 10 V |
@VGS= 6 V |
|||||||
| TK2R4E08QM | 80 | 120 | 2.44 | 3.2 | 178 | 52 | 210 | 13000 | TO-220 |
| TK3R3E08QM | 120 | 3.3 | 4.2 | 110 | 31 | 119 | 7670 | ||
| TK5R3E08QM | 120 | 5.3 | 7.3 | 55 | 17 | 66 | 3980 | ||
| TK7R0E08QM | 64 | 7.0 | 9.7 | 39 | 11.6 | 46 | 2700 | ||
| TK2R4A08QM | 100 | 2.44 | 3.1 | 179 | 54 | 210 | 13000 | TO-220SIS | |
| TK3R2A08QM | 92 | 3.2 | 4.1 | 102 | 31 | 119 | 7670 | ||
| TK5R1A08QM | 70 | 5.1 | 4.1 | 54 | 17 | 66 | 3980 | ||
| TK6R8A08QM | 58 | 6.8 | 9.5 | 39 | 13 | 46 | 2700 | ||
| TK5R1P08QM | 84 | 5.1 | 7.0 | 56 | 17 | 66 | 3980 | DPAK | |
| TK6R9P08QM | 62 | 6.9 | 9.6 | 39 | 11.6 | 46 | 2700 | ||
Internal Circuits
Application Circuit Examples
Note: The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.