Product News 2021-03
Toshiba Electronic Devices & Storage Corporation ("Toshiba”) has launched 10 products in its lineup of new generation 80 V N-channel power MOSFET “U-MOSⅩ-H series” suitable for switching power supplies of industrial equipment. Three package types are available: “TK2R4E08QM, TK3R3E08QM, TK5R3E08QM and TK7R0E08QM” using TO-220, a through-hole type; “TK2R4A08QM, TK3R2A08QM, TK5R1A08QM and TK6R8A08QM” using TO-220SIS, an isolated through-hole type; and “TK5R1P08QM and TK6R9P08QM” using DPAK, a surface mount type.
By adopting the new generation U-MOSⅩ-H process with a low-voltage trench structure, the new products feature industry-leading low drain-source On-resistance. This reduces conduction loss, helping reduce the power consumption of equipment. In addition, they have inherited the low gate switch charge characteristics from the existing generation process U-MOSVIII-H. This reduces the values of drain-source On-resistance x gate switch charge, a figure of merit for switching applications.
 Among products with the same rating, as of February, 2021. Toshiba survey.
 Compared with TK100E08N1 (U-MOSVIII-H series), TK2R4E08QM has reduced its "typical drain-source On-resistance × typical gate switch charge" by about 8 %.
(Unless otherwise specified, @Ta=25 °C)
Note: The application circuits shown in this document are provided for reference purposes only.
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