Lineup Expansion of 40 V N-Channel Power MOSFETs that Contribute to Lower Power Consumption for Automotive Equipment

Product News 2023-09

The package photograph of lineup expansion of 40 V N-channel power MOSFETs that contribute to lower power consumption for automotive equipment.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started mass production of three 40 V N-channel MOSFETs using SOP Advance(WF) package for automotive and has expanded its lineup. The three models are "XPHR9904PS, XPH2R404PS and XPH3R304PS."

The new products reduce drain-source On-resistance with the U-MOSIX process as with Toshiba’s precedence release products XPHR7904PS and XPH1R104PS. The drain-source On-resistance of XPH2R404PS is 2.4 mΩ (max), which is approximately 27 % lower than that of Toshiba’s existing product TPCA8083[1], and XPH3R304PS is 3.3 mΩ (max), which is approximately 42 % lower than that of Toshiba’s existing product TPCA8085[1]. The drain-source On-resistance of XPHR9904PS is 0.99 mΩ (max). Reducing drain-source On-resistance of these products contributes to low power consumption of automotive equipment. In addition, they are qualified with the automotive reliability standard AEC-Q101. The PPAP of IATF16949 is also available[2].

The package is a surface mount type SOP Advance(WF) that uses a wettable flank terminal structure, which facilitates automated visual inspection of the board mounting state.

Toshiba’s automotive MOSFETs support a variety of automotive applications and meet a wide range of customer needs.

Notes :
[1] SOP Advance package
[2] Please contact Toshiba sales representatives for more details.

Applications

  • Automotive equipment: motor drives, switching power supplies, load switches, etc.

Features

  • Low On-resistance
    XPHR9904PS: RDS(ON)=0.99 mΩ (max) (VGS=10 V)
    XPH2R404PS: RDS(ON)=2.4 mΩ (max) (VGS=10 V)
    XPH3R304PS: RDS(ON)=3.3 mΩ (max) (VGS=10 V)
  • AEC-Q101 qualified
  • PPAP of IATF16949 available[2]

Main Specifications

(Ta=25 °C unless otherwise specified)

Part number

Polarity

Absolute maximum ratings

Electrical

characteristics

Thermal

characteristics

Package

Drain-

source

voltage

VDSS

(V)

Drain

current

(DC)

ID

(A)

Drain

current

(pulsed)

IDP

(A)

Channel

temperature

Tch

(°C)

Drain-source

On-resistance

RDS(ON)

(mΩ)

Channel-to-case

thermal

impedance

Zth(ch-c)

(°C/W)

VGS=

6 V

VGS=

10 V

Tc=25 °C

max

max

max

XPH3R304PS

N-channel

40

60

120

175

6.3

3.3

1.95

SOP Advance(WF)

XPH2R404PS

90

180

4.1

2.4

1.6

XPH1R104PS[3]

120

360

1.96

1.14

1.13 

XPHR9904PS

130

390

1.63

0.99

0.98

XPHR7904PS[3]

150

450

1.3

0.79

0.88

Notes :
[3] Toshiba’s precedence release products

Internal Circuit

The illustration of internal circuit of lineup expansion of 40 V N-channel power MOSFETs that contribute to lower power consumption for automotive equipment.

Application Circuit Example

The illustration of application circuit example of lineup expansion of 40 V N-channel power MOSFETs that contribute to lower power consumption for automotive equipment.

Notes :
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

 

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