Lineup Expansion of 40 V N-Channel Power MOSFETs that Contribute to Lower Power Consumption for Automotive Equipment
Product News 2023-09
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started mass production of three 40 V N-channel MOSFETs using SOP Advance(WF) package for automotive and has expanded its lineup. The three models are "XPHR9904PS, XPH2R404PS and XPH3R304PS."
The new products reduce drain-source On-resistance with the U-MOSIX process as with Toshiba’s precedence release products XPHR7904PS and XPH1R104PS. The drain-source On-resistance of XPH2R404PS is 2.4 mΩ (max), which is approximately 27 % lower than that of Toshiba’s existing product TPCA8083[1], and XPH3R304PS is 3.3 mΩ (max), which is approximately 42 % lower than that of Toshiba’s existing product TPCA8085[1]. The drain-source On-resistance of XPHR9904PS is 0.99 mΩ (max). Reducing drain-source On-resistance of these products contributes to low power consumption of automotive equipment. In addition, they are qualified with the automotive reliability standard AEC-Q101. The PPAP of IATF16949 is also available[2].
The package is a surface mount type SOP Advance(WF) that uses a wettable flank terminal structure, which facilitates automated visual inspection of the board mounting state.
Toshiba’s automotive MOSFETs support a variety of automotive applications and meet a wide range of customer needs.
Notes :
[1] SOP Advance package
[2] Please contact Toshiba sales representatives for more details.
Applications
- Automotive equipment: motor drives, switching power supplies, load switches, etc.
Features
- Low On-resistance
XPHR9904PS: RDS(ON)=0.99 mΩ (max) (VGS=10 V)
XPH2R404PS: RDS(ON)=2.4 mΩ (max) (VGS=10 V)
XPH3R304PS: RDS(ON)=3.3 mΩ (max) (VGS=10 V) - AEC-Q101 qualified
- PPAP of IATF16949 available[2]
Main Specifications
(Ta=25 °C unless otherwise specified)
Part number |
Polarity |
Absolute maximum ratings |
Electrical characteristics |
Thermal characteristics |
Package |
||||
|---|---|---|---|---|---|---|---|---|---|
Drain- source voltage VDSS (V) |
Drain current (DC) ID (A) |
Drain current (pulsed) IDP (A) |
Channel temperature Tch (°C) |
Drain-source On-resistance RDS(ON) (mΩ) |
Channel-to-case thermal impedance Zth(ch-c) (°C/W) |
||||
VGS= 6 V |
VGS= 10 V |
Tc=25 °C |
|||||||
max |
max |
max |
|||||||
N-channel |
40 |
60 |
120 |
175 |
6.3 |
3.3 |
1.95 |
SOP Advance(WF) |
|
90 |
180 |
4.1 |
2.4 |
1.6 |
|||||
120 |
360 |
1.96 |
1.14 |
1.13 |
|||||
130 |
390 |
1.63 |
0.99 |
0.98 |
|||||
150 |
450 |
1.3 |
0.79 |
0.88 |
|||||
Notes :
[3] Toshiba’s precedence release products
Internal Circuit
Application Circuit Example
Notes :
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.
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