Lineup Expansion of 150 V N-Channel Power MOSFETs in U-MOSX-H Series to Reduce Power Consumption for Power Supplies

Product News 2024-04

The package photograph of lineup expansion of 150 V N-channel power MOSFETs in U-MOSX-H series to reduce power consumption for power supplies.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched two 150 V N-channel power MOSFET products that use the new generation process “U-MOSX-H series” and are suitable for switching power supplies for industrial equipment—used for such as data centers and communication base stations—and has expanded the lineup. The new products use the surface mount type SOP Advance(N) package and their drain-source On-resistance (max) is 11.1 mΩ for “TPH1100CQ5” and 14.1 mΩ for “TPH1400CQ5.”

The new products TPH1100CQ5 and TPH1400CQ5 have improved the reverse recovery[1] characteristics that are critical in synchronous rectification applications. In the case of TPH1400CQ5, the reverse recovery charge is reduced by approximately 73 % and the reverse recovery time is approximately 45 % faster compared with Toshiba’s existing TPH1400CQH[2]. Used in synchronous rectification applications[3], TPH1400CQ5 reduces the power loss of switching power supplies and helps improve efficiency.
The new products reduce the drain source spike voltage[4] generated between the drain and source when MOSFET is switched, helping to lower EMI in switching power supplies.

Toshiba will expand its lineup of products and help to reduce power consumption for equipment.

Notes:

[1] A switching action in which the MOSFET body diode switches from forward to reverse biased
[2] A product using the same generation process as TPH1400CQ5 and featuring the same voltage and On-resistance
[3] If TPH1400CQ5 is used in a circuit that does not operate in reverse recovery mode, the power loss is equivalent to that of TPH1400CQH.
[4] When used in a circuit that operates in reverse recovery mode

Applications

  • Switching power supplies (high efficiency AC-DC converters, high efficiency DC-DC converters, etc.)
  • Motor control equipment (motor drives, etc.)

Features

  • Low reverse recovery charge:
    TPH1100CQ5 Qrr=32 nC (typ.) (-dIDR/dt=100 A/μs)
    TPH1400CQ5 Qrr=27 nC (typ.) (-dIDR/dt=100 A/μs)
  • Fast reverse recovery time: 
    TPH1100CQ5 trr=38 ns (typ.) (-dIDR/dt=100 A/μs)
    TPH1400CQ5 trr=36 ns (typ.) (-dIDR/dt=100 A/μs)
  • High channel temperature rating: Tch (max)=175 °C

Main Specifications

(Ta=25 °C unless otherwise specified)

Part number

TPH1100CQ5

TPH1400CQ5
Absolute
maximum
ratings		 Drain-source voltage  VDSS  (V)

150
Drain current (DC)  ID  (A) Tc=25 °C

49

32
Channel temperature  Tch  (°C)

175
Electrical
characteristics
 Drain-source On-resistance  RDS(ON)  (mΩ) VGS=10 V Max

11.1

14.1
VGS=8 V Max

13.6

17.3
Total gate charge  Qg  (nC) Typ.

38

31
Input capacitance  Ciss  (pF) Typ.

2830

2400
Gate resistance  rg  (Ω) Typ.

1.5

1.2
Reverse recovery time  trr  (ns) -dIDR/dt=
100 A/μs		 Typ.

38

36
Reverse recovery charge  Qrr  (nC) Typ.

32

27
Package

SOP Advance(N)

Internal Circuit

The illustration of internal circuit of lineup expansion of 150 V N-channel power MOSFETs in U-MOSX-H series to reduce power consumption for power supplies.

Application Circuit Examples

The illustration of application circuit examples of lineup expansion of 150 V N-channel power MOSFETs in U-MOSX-H series to reduce power consumption for power supplies.

Note:
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

* Company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

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