Radio-Frequency Devices

Toshiba offers various radio-frequency (RF) devices specifically designed to reduce the size and improve the performance of wireless communication equipment, such as switches and diodes.

Lineup

RF Diodes

Radio-Frequency Schottky Barrier Diodes
They are suitable for radio-frequency signal mixer circuits because the forward voltage is low and the reverse recovery time is short.
Radio-Frequency Switching Diodes
They are particularly optimum for switching UHF/VHF frequency band of TV tuners.
Variable Capacitance Diodes
These diodes have the capacities variable depending on the value of the reverse bias voltage applied. They are used in radio-frequency matching circuits for electronic tuning.

Documents

Name Date

News / Latest information

27-02-2020

Toshiba Introduces Cutting-edge Generation SOI Process for RF Switches and Low-Noise Amplifier ICs for 5G Smartphones

  • Products/Technology
  • 5G
  • Smartphone
  • TaRF
  • TarfSOI
  • LNA
  • RF IC
  • Wi-Fi
  • UWB

26-01-2018

Toshiba Electronic Devices & Storage Corporation Introduces SOI Process with Low Noise Figure for Low-Noise RF Amplifiers for Smartphones

  • Products/Technology
  • NF
  • LNA
  • smartphone
  • mobile
  • smartphone
  • mobile
  • RF
  • TarfSOI

문의

기술 문의

문의

문의

자주 있는 문의

자주 있는 문의

Related information

A new window will open