January 29, 2018
Toshiba Electronic Devices & Storage Corporation
TOKYO— Toshiba Electronic Devices & Storage Corporation today announced the launch of “SSM6N357R,” a new MOSFET with a built-in diode between the drain and gate terminals. The device is suited to driving inductive loads, such as mechanical relays. Volume shipments start today.
SSM6N357R integrates a pull-down resistor, a series resistor and a Zener diode, which reduces the parts count and save on board space. Furthermore, since it is a dual-type package product (2 in 1), it has an approximately 42% smaller mounting area than the alternative of using two SSM3K357R (2.4 x 2.9 x 0.8 mm) single-type package products.
An industry-standard TSOP6F-class package, a low operating voltage of 3.0V and AEC-Q101 qualification make the SSM6N357R suitable for automotive and many other applications.
|Absolute maximum ratings||Drain-source voltage
|Electrical Characteristics||Drain-source on-resistance
RDS(ON) max (mΩ)
|Total gate charge
Qg typ. (nC)
Ciss typ. (pF)
Small Signal Device Sales & Marketing Department
*Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.