TK16G60W

Power MOSFET (N-ch 500V<VDSS≤700V)

数据表

TK16G60W 数据表/日文[Dec,2013]PDF: 361KB

数据表

TK16G60W 数据表/英文[Dec,2013]PDF: 245KB

Simulation Model

PSpice Model[Jul,2020]lib: 3KB

Simulation Model

LTspice Model[Mar,2021]ZIP: 11KB

Reliability Information

Reliability Data[Oct,2024]PDF: 276KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

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Catalog

Selection Guide MOSFETs 2025 Rev1.0[Feb,2025]PDF: 3497KB

数据表

TK16G60W 数据表/日文[Dec,2013]PDF: 361KB

数据表

TK16G60W 数据表/英文[Dec,2013]PDF: 245KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

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Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

相关技术数据

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

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Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

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Avalanche energy calculation[Mar,2020]PDF: 562KB

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Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

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Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes[Nov,2019]PDF: 1061KB

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U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

相关技术数据

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

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Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

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Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

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Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

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Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

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Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

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MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

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Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

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Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Jul,2020]lib: 3KB

Simulation Model

LTspice Model[Mar,2021]ZIP: 11KB

Reliability Information

Reliability Data[Oct,2024]PDF: 276KB

Catalog

Selection Guide MOSFETs 2025 Rev1.0[Feb,2025]PDF: 3497KB

产品概要

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation DTMOSⅣ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name D2PAK
Package Image D2PAK
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)		 10.35×15.3×4.46
Package Dimensions 查看
Land pattern dimensions 查看
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)		 Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note3)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note3)
SamacSys CAD model
(Symbol, Footprint and 3D model)		 Download from SamacSys<br>(Note2)(Note3)

Download from SamacSys
(Note2)(Note3)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

(Note3)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS 600 V
Gate-Source voltage VGSS +/-30 V
Drain current ID 15.8 A
Power Dissipation PD 130 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Max) Vth - 3.7 V
Gate threshold voltage (Min) Vth - 2.7 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 190 mΩ
Input capacitance (Typ.) Ciss - 1350 pF
Total gate charge (Typ.) Qg VGS=10V 38 nC
Reverse recovery time (Typ.) trr - 280 ns
Reverse recovery charge (Typ.) Qrr - 2900 nC
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Jul,2020

Mar,2021

Oct,2024

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

可订购器件型号

Orderable part number
(example)		 MOQ(pcs) Reliability
Information		 RoHS
TK16G60W,RVQ 1000 Yes

应用

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